公开(公告)号：US09514950B2

公开(公告)日：2016-12-06

申请号：US14585247

申请日：2014-12-30

申请人： Canon Nanotechnologies, Inc. ,  Molecular Imprints, Inc.

发明人： Zhengmao Ye ,  Dwayne L. LaBrake

IPC分类号： H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/3105 ,  H01L21/283 ,  G03F7/00

CPC分类号： H01L21/3086 ,  G03F7/0002 ,  H01L21/02532 ,  H01L21/02623 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/32051

摘要： Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.

摘要翻译： 描述了在压印光刻中提高蚀刻选择性的方法，其采用材料沉积技术，其赋予多层材料堆叠独特的形态，从而增强蚀刻工艺窗口并提高蚀刻选择性。 例如，可以实现在图案化的抗蚀剂层和沉积的金属，准金属或非有机氧化物之间的50:1或更大的蚀刻选择性，这大大保持了将图案转移到衬底中的蚀刻工艺之前的图案特征高度， 允许以高保真度进行亚20 nm图案转印。

公开(公告)号：US20150187590A1

公开(公告)日：2015-07-02

申请号：US14585247

申请日：2014-12-30

申请人： Canon Nanotechnologies, Inc. ,  Molecular Imprints, Inc.

发明人： Zhengmao Ye ,  Dwayne L. LaBrake

IPC分类号： H01L21/308 ,  H01L21/283 ,  H01L21/3205 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L21/3086 ,  G03F7/0002 ,  H01L21/02532 ,  H01L21/02623 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/32051

摘要： Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.

摘要翻译： 描述了在压印光刻中提高蚀刻选择性的方法，其采用材料沉积技术，其赋予多层材料堆叠独特的形态，从而增强蚀刻工艺窗口并提高蚀刻选择性。 例如，可以实现在图案化的抗蚀剂层和沉积的金属，准金属或非有机氧化物之间的50:1或更大的蚀刻选择性，这大大保持了将图案转移到衬底中的蚀刻工艺之前的图案特征高度， 允许以高保真度进行亚20 nm图案转印。

公开(公告)号：US20150158240A1

公开(公告)日：2015-06-11

申请号：US14565507

申请日：2014-12-10

申请人： Canon Nanotechnologies, Inc.

发明人： Gaddi S. Haase ,  Kosta S. Selinidis ,  Zhengmao Ye

IPC分类号： B29C59/02

CPC分类号： B29C59/022 ,  B29L2007/001 ,  G03F7/0002

摘要： Imprint lithography templates having leading and trailing edge borders are provided that achieve zero-gap imprinting between adjacent fields with full-feature height features provided in the pattern exclusion zones (PEZ) located between such fields. The leading edge borders include dummy features, e.g., elongated features directionally oriented parallel to the mesa edge, while the trailing edge border includes a recess extending to the mesa edges. When used in a step-and-repeat process, the trailing edge border overlaps edge portions of an adjacent imprinted field that were previously patterned by the leading edge border of the template, producing full-feature height features in the pattern exclusion zones between such fields, and avoiding gaps or open areas between such fields that otherwise lead to non-uniformity of downstream processes such as etch processes and CMP.

摘要翻译： 提供具有前缘和后缘边界的压印光刻模板，其在位于这些场之间的图案排除区（PEZ）中提供的具有全特征高度特征的相邻场之间实现零间隙印记。 前缘边界包括虚拟特征，例如，平行于台面边缘定向取向的细长特征，而后缘边界包括延伸到台面边缘的凹部。 当用于重复步骤的过程中，后缘边缘与先前由模板的前缘边缘图案化的相邻印刷场的边缘部分重叠，从而在这些区域之间的图案排除区域中产生全特征高度特征 ，并且避免这些场之间的间隙或开放区域，否则会导致诸如蚀刻工艺和CMP之类的下游工艺的不均匀性。

公开(公告)号：US10124529B2

公开(公告)日：2018-11-13

申请号：US14565507

申请日：2014-12-10

申请人： Canon Nanotechnologies, Inc.

发明人： Gaddi S. Haase ,  Kosta S. Selinidis ,  Zhengmao Ye

IPC分类号： B29C59/02 ,  G03F7/00 ,  B29L7/00

摘要： Imprint lithography templates having leading and trailing edge borders are provided that achieve zero-gap imprinting between adjacent fields with full-feature height features provided in the pattern exclusion zones (PEZ) located between such fields. The leading edge borders include dummy features, e.g., elongated features directionally oriented parallel to the mesa edge, while the trailing edge border includes a recess extending to the mesa edges. When used in a step-and-repeat process, the trailing edge border overlaps edge portions of an adjacent imprinted field that were previously patterned by the leading edge border of the template, producing full-feature height features in the pattern exclusion zones between such fields, and avoiding gaps or open areas between such fields that otherwise lead to non-uniformity of downstream processes such as etch processes and CMP.