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公开(公告)号：US20220317564A1
公开(公告)日：2022-10-06
申请号：US17837411
申请日：2022-06-10
Applicant: Carl Zeiss SMT GmbH
Inventor： Michael Budach , Christof Baur , Klaus Edinger , Tristan Bret
Abstract: The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.
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公开(公告)号：US11262378B2
公开(公告)日：2022-03-01
申请号：US17128498
申请日：2020-12-21
Applicant: Carl Zeiss SMT GmbH
Inventor： Christof Baur , Michael Budach
Abstract: The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.
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公开(公告)号：US11256168B2
公开(公告)日：2022-02-22
申请号：US16775719
申请日：2020-01-29
Applicant: Carl Zeiss SMT GmbH
Inventor： Michael Budach , Ottmar Hoinkis
IPC: G03F1/74 , G03F7/20 , H01J37/317 , H01J37/302 , H01J37/305 , G03F1/86 , H01J37/00 , H01J37/20 , H01J37/147
Abstract: The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (φ) between the time-varying particle beam and a surface of the photolithographic mask.
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公开(公告)号：US10068747B2
公开(公告)日：2018-09-04
申请号：US15253795
申请日：2016-08-31
Applicant: Carl Zeiss SMT GmbH
Inventor： Michael Budach , Michael Schnell , Bernd Schindler , Markus Boese
CPC classification number: H01J37/28 , G01Q30/02 , H01J37/026 , H01J37/222 , H01J2237/004 , H01J2237/2818 , H01J2237/3174
Abstract: A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.
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公开(公告)号：US10060947B2
公开(公告)日：2018-08-28
申请号：US14137731
申请日：2013-12-20
Applicant: Carl Zeiss SMT GmbH
Inventor： Michael Budach , Tristan Bret , Klaus Edinger , Thorsten Hofmann
Abstract: The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data.
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Patent Agency Ranking
6.发明授权Scanning particle microscope and method for determining a position change of a particle beam of the scanning particle microscope 有权扫描粒子显微镜和扫描粒子显微镜的粒子束位置变化的测定方法公开(公告)号：US09336983B2
公开(公告)日：2016-05-10
申请号：US14755264
申请日：2015-06-30
Applicant: Carl Zeiss SMT GmbH
Inventor： Michael Budach , Christof Baur , Dajana Cujas , Robert Heberlein , Marion Batz
CPC classification number: H01J37/265 , G01Q30/02 , H01J37/28 , H01J2237/2583 , H01J2237/2826
Abstract: The invention refers to a scanning particle microscope comprising: (a) at least one reference object which is fixedly arranged at an output of the scanning particle microscope for a particle beam so that the reference object can at least partially be imaged by use of the electron beam; (b) at least one scanning unit operable to scan a particle beam of the scanning particle microscope across at least one portion of the reference object; and (c) at least one setting unit operable to change at least one setting of the scanning particle microscope.
Abstract translation: 本发明涉及一种扫描粒子显微镜，包括：（a）至少一个参考对象，其固定地布置在用于粒子束的扫描粒子显微镜的输出处，使得参考对象可以至少部分地通过使用电子 光束; （b）至少一个扫描单元，其可操作以跨所述参考物体的至少一部分扫描所述扫描粒子显微镜的粒子束; 和（c）至少一个设置单元，其可操作以改变扫描粒子显微镜的至少一个设置。
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公开(公告)号：US20230238209A1
公开(公告)日：2023-07-27
申请号：US18121722
申请日：2023-03-15
Applicant: Carl Zeiss SMT GmbH
Inventor： Nicole Auth , Michael Budach , Thorsten Hofmann , Jens Oster
IPC: H01J37/20 , H01J37/317
CPC classification number: H01J37/20 , H01J37/3174 , H01J2237/31776 , H01J2237/31794
Abstract: An apparatus for analyzing and/or processing a sample with a particle beam, comprising:
a sample stage for holding the sample;
a providing unit for providing the particle beam comprising:
an opening for guiding the particle beam to a processing position on the sample; and
a shielding element for shielding an electric field generated by charges accumulated on the sample;
wherein the shielding element covers the opening, is embodied in sheetlike fashion and comprises an electrically conductive material;
wherein the shielding element comprises a convex section, this section being convex in relation to the sample stage; and
wherein the convex section has a through opening for the particle beam to pass through to the sample.-
公开(公告)号：US20230081844A1
公开(公告)日：2023-03-16
申请号：US17940688
申请日：2022-09-08
Applicant: Carl Zeiss SMT GmbH
Inventor： Thorsten Hofmann , Michael Budach
IPC: H01J37/22 , H01J37/28 , H01J37/147 , H01J37/305 , G03F7/20 , G03F1/74
Abstract: A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of: a1) providing an image of at least a portion of the photomask, b1) determining a geometric shape of a defect in the image as a repair shape, c1) subdividing the repair shape into a number of n pixels in accordance with a first rasterization, d1) subdividing the repair shape into a number of m pixels in accordance with a second rasterization, the second rasterization emerging from a subpixel displacement of the first rasterization, e1) providing an activating particle beam and a process gas at each of the n pixels of the repair shape in accordance with the first rasterization, and f1) providing the activating particle beam and the process gas at each of the m pixels of the repair shape in accordance with the second rasterization.
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公开(公告)号：US11592461B2
公开(公告)日：2023-02-28
申请号：US17681028
申请日：2022-02-25
Applicant: Carl Zeiss SMT GmbH
Inventor： Christof Baur , Michael Budach
Abstract: The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.
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10.发明授权公开(公告)号：US11385540B2
公开(公告)日：2022-07-12
申请号：US16737965
申请日：2020-01-09
Applicant: Carl Zeiss SMT GmbH
Inventor： Michael Budach , Nicole Auth
Abstract: The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.
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