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    Fluorine compounds for doping conductive oxide thin films
    9.
    发明授权
    Fluorine compounds for doping conductive oxide thin films 失效
    用于掺杂导电氧化物薄膜的氟化合物

    公开(公告)号：US08425978B2

    公开(公告)日：2013-04-23

    申请号：US12884490

    申请日：2010-09-17

    申请人： Tim Gessert ,  Xiaonan Li ,  Teresa M. Barnes ,  Robert Torres, Jr. ,  Carrie L. Wyse

    发明人： Tim Gessert ,  Xiaonan Li ,  Teresa M. Barnes ,  Robert Torres, Jr. ,  Carrie L. Wyse

    IPC分类号： C23C16/00 ,  C23C16/08

    CPC分类号： C23C16/45523 ,  C23C16/407 ,  C23C16/50

    摘要： Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

    摘要翻译： 描述了通过化学气相沉积在衬底上形成导电氟掺杂金属氧化物层的方法。 所述方法可以包括在处理室中加热衬底，并将含金属的前体和含氟前体引入到处理室中。 所述方法还可以包括向处理室中加入含氧前体。 使前体反应以在衬底上沉积氟掺杂的金属氧化物层。 方法还可以包括通过等离子体辅助化学气相沉积形成导电性氟掺杂金属氧化物层。 这些方法可以包括在处理室中提供衬底，并将含金属的前体和含氟前体引入处理室。 可以形成包括来自含金属的前体和含氟前体的物质的等离子体。 该物质可以反应以在衬底上沉积氟掺杂的金属氧化物层。

    In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use
    10.
    发明授权
    In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use 有权
    原位生成分子蚀刻剂羰基氟化物或其任何变体及其用途

    公开(公告)号：US08932406B2

    公开(公告)日：2015-01-13

    申请号：US13831613

    申请日：2013-03-15

    申请人： Glenn Mitchell ,  Ramkumar Subramanian ,  Carrie L. Wyse ,  Robert Torres, Jr.

    发明人： Glenn Mitchell ,  Ramkumar Subramanian ,  Carrie L. Wyse ,  Robert Torres, Jr.

    IPC分类号： C25F1/00 ,  B01J19/08 ,  B01J19/12 ,  B08B7/00 ,  C01B31/00 ,  C23C16/44 ,  H01L21/311

    CPC分类号： B01J19/087 ,  B01J19/081 ,  B01J19/088 ,  B01J19/123 ,  B01J19/125 ,  B01J19/126 ,  B01J19/127 ,  B01J19/128 ,  B01J19/129 ,  B01J2219/0883 ,  B01J2219/0892 ,  C01B31/00 ,  C01B32/00 ,  C01B32/80 ,  C23C16/4405 ,  H01L21/31116 ,  Y02C20/30 ,  Y02P70/605

    摘要： The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber. The additive(s) may be introduced upstream or downstream of the remote plasma such that both NF3 and the additive(s) (and any plasma-generated effluents) are present in the CVD chamber during cleaning.

    摘要翻译： 根据本发明，提供分子蚀刻剂碳酰氟（COF 2）或其任何变体，以提高蚀刻和/或清洁和/或去除诸如不需要的膜和/或沉积物之类的材料的效率 处理室或基板（这里统称为“材料”）中的室壁和其它部件。 本发明的方法包括通过逐步添加添加剂，例如但不限于饱和的，不饱和的或部分不饱和的全氟化碳化合物（PFC）来点燃和维持等离子体，无论是远距离还是原位等离子体，其具有 通式（CyFz）和/或碳（COx）与三氟化氮（NF3）等离子体的氧化物进入化学沉积室（CVD）室，从而产生COF 2。 NF 3可以在CVD室内的等离子体中或在CVD室上游的远程等离子体区域中被激发。 添加剂可以被引入远程等离子体的上游或下游，使得NF 3和添加剂（和任何等离子体产生的流出物）在清洁期间都存在于CVD室中。