公开(公告)号：US20180005677A1

公开(公告)日：2018-01-04

申请号：US15540159

申请日：2016-01-13

申请人： Centre National de la Recherche Scientifique ,  Commissariat à I'Énergie Atomique et aux Énergies Alternatives

发明人： Gilles Gaudin ,  Ioan Mihai Miron ,  Olivier Boulle ,  Safeer Chenattukuz Hiyil ,  Jean-Pierre Nozieres

IPC分类号： G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.

公开(公告)号：US10224085B2

公开(公告)日：2019-03-05

申请号：US15540159

申请日：2016-01-13

申请人： Centre National de la Recherche Scientifique ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： Gilles Gaudin ,  Ioan Mihai Miron ,  Olivier Boulle ,  Safeer Chenattukuz Hiyil ,  Jean-Pierre Nozieres

IPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/18 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

摘要： A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.

公开(公告)号：US10381059B2

公开(公告)日：2019-08-13

申请号：US15768522

申请日：2016-10-15

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Gilles Gaudin ,  Ioan Mihai Miron ,  Olivier Boulle ,  Safeer Chenattukuzhiyil

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/02

摘要： A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.

公开(公告)号：US10833249B2

公开(公告)日：2020-11-10

申请号：US15707405

申请日：2017-09-18

申请人： Centre National de la Recherche Scientifique ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： Gilles Gaudin ,  Ioan Mihai Miron ,  Alexandru Trifu

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

摘要： A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.

公开(公告)号：US20190088853A1

公开(公告)日：2019-03-21

申请号：US15707405

申请日：2017-09-18

申请人： Centre National de la Recherche Scientifique ,  Commissariat a l'Energie Atomique et aux Energies Alternatives

发明人： Gilles Gaudin ,  Ioan Mihai Miron ,  Alexandru Trifu

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.