摘要:
Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
摘要:
Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
摘要:
An off-axis projection optical system including first and second mirrors that are off-axially arranged is provided. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation. R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2
摘要:
A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.
摘要:
Example embodiments are directed to an off-axis projection optical system including first and second mirrors that are off-axially arranged. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2.
摘要:
A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.
摘要:
A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and any one of the displayed characters is marked with a selection indication. When a move key is pressed, the duration of the key press of the move key is measured and the selection indication is sequentially moved. When input of the move key is released, a character marked with the selection indication is entered.
摘要:
An amorphous silicon thin film transistor, an organic light-emitting display (OLED) device including the same and method thereof are provided. The example amorphous silicon thin film transistor may include an amorphous silicon thin film transistor portion including a gate electrode, a gate insulating layer, an amorphous silicon layer, and source/drain electrodes and a heat generating portion generating heat and applying the heat to the amorphous silicon layer to reduce a threshold voltage of the amorphous silicon thin film transistor portion. The example method may include applying heat to an amorphous silicon layer if a threshold voltage of an amorphous silicon thin film transistor rises above a default level, the amorphous silicon thin film transistor including the amorphous silicon layer, the applied heat configured to reset the threshold voltage to the default level. The example OLED device may include a substrate and a plurality of pixels arranged in a matrix form on the substrate, each of the pixels comprising a switching transistor, a driving transistor, and an organic light-emitting diode.
摘要:
A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and a character among the displayed characters is marked with a selection indication. When a move key is pressed, the duration is identified and compared with a criterion time. If the selection indication is equal to or longer than the criterion time, the character marked with the selection indication is entered.
摘要:
An apparatus and method are disclosed for providing location-based advertisement information in a BWA communication system, in which a shop terminal provides advertisement information to a service provider server. The service provider server uses the advertisement information as accounting information and provides path guidance information to a user terminal. A Radio Access Station (“RAS”) broadcasts or selectively sends the advertisement information to the user terminal and sends path guidance approval information received from the user terminal to the service provider server. The user terminal receives the advertisement information from the RAS, sends the path guidance approval information according to user selection, receives the path guidance information from the service provider server, and invokes a path guidance function.