公开(公告)号：US20140124810A1

公开(公告)日：2014-05-08

申请号：US14068429

申请日：2013-10-31

Applicant: Sang Il Kim ,  Dong Hun Kang ,  Jong Ho Na ,  Yong Seon Song

Inventor： Sang Il Kim ,  Dong Hun Kang ,  Jong Ho Na ,  Yong Seon Song

IPC: H01L33/58

CPC classification number: H01L33/20 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16

Abstract: A light emitting device includes a substrate and a plurality of protrusions protruding from a top surface of the substrate. A first semiconductor layer is provided on top surfaces of the protrusions and a plurality of seed patterns protrudes from a bottom surface of the first semiconductor layer toward the protrusions. A medium layer is provided between the protrusions and a light emitting structure on a top surface of the first semiconductor layer. The bottom surface of the first semiconductor layer is located at a higher position than that of each of the protrusions, and the first semiconductor layer contacts a c-plane of each protrusion.

Abstract translation: 发光装置包括基板和从基板的顶表面突出的多个突起。 第一半导体层设置在突起的顶表面上，并且多个晶种图案从第一半导体层的底表面向突起突出。 在第一半导体层的顶表面之间的突起和发光结构之间设置介质层。 第一半导体层的底表面位于比每个突起的位置更高的位置，并且第一半导体层接触每个突起的c面。

公开(公告)号：US08421070B2

公开(公告)日：2013-04-16

申请号：US12929324

申请日：2011-01-14

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/12

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract translation: 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z＆nlE;约3.15和约0.55≤n1E; y /z≤n1E;约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US20120146492A1

公开(公告)日：2012-06-14

申请号：US13243614

申请日：2011-09-23

Applicant: Ji-Hun Ryu ,  Dong-Won Han ,  Young-Seo Choi ,  Jae-Ho Lee ,  Oh-June Kwon ,  Jin-Ho Kwack ,  Dae-Beom Shin ,  Dong-Hun Kang ,  Hyo-Jin Kim ,  Seung-Yong Song

Inventor： Ji-Hun Ryu ,  Dong-Won Han ,  Young-Seo Choi ,  Jae-Ho Lee ,  Oh-June Kwon ,  Jin-Ho Kwack ,  Dae-Beom Shin ,  Dong-Hun Kang ,  Hyo-Jin Kim ,  Seung-Yong Song

IPC: H01J1/70 ,  H01J9/22

CPC classification number: H01L51/5256

Abstract: In an organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus comprises: a substrate; a light-emitting unit formed on the substrate; and an encapsulation film, which covers the light-emitting unit on the substrate, and which includes a plurality of organic layers and a plurality of inorganic layers which are alternately stacked.

Abstract translation: 在有机发光显示装置及其制造方法中，有机发光显示装置包括：基板; 形成在所述基板上的发光单元; 以及覆盖基板上的发光单元并且包括多个有机层和交替堆叠的多个无机层的封装膜。

公开(公告)号：US08063421B2

公开(公告)日：2011-11-22

申请号：US12007038

申请日：2008-01-04

Applicant: Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

Inventor： Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L29/7869

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管可以包括栅极; 一个通道层; 源极和漏极，源极和漏极由金属形成; 和金属氧化物层，金属氧化物层形成在沟道层与源极和漏极之间。 金属氧化物层可以在沟道层和源极和漏极之间具有逐渐变化的金属含量。

公开(公告)号：US20110179663A1

公开(公告)日：2011-07-28

申请号：US12801038

申请日：2010-05-18

Applicant: Dong Hun Kang

Inventor： Dong Hun Kang

IPC: G01B1/00 ,  G01B3/10

CPC classification number: A61B5/1072 ,  A61B5/6814 ,  G01B3/1061 ,  G01B3/1084 ,  G01B2003/1069

Abstract: Disclosed herein are a stature measuring method and a stature measuring device using the method. The method includes securing an anchoring unit, coupled to a main body via a tape, to a building wall, moving the main body to a bottom in a state in which the anchoring unit is secured to the building wall, inputting a reference point setting signal in a state in which the main body comes into contact with the bottom, and moving the main body from the bottom to a position above an examinee's head, and measuring a distance from a point where the reference point setting signal is input to a point where the main body is moved above the examinee's head, thus determining the examinee's stature.

Abstract translation: 本文公开了使用该方法的身高测量方法和身高测量装置。 该方法包括将通过带连接到主体的锚定单元固定到建筑物墙壁上，将锚固单元固定在建筑物墙壁上的状态下将主体移动到底部，输入参考点设置信号 在主体与底部接触的状态下，将主体从底部移动到受检者的头部上方的位置，并且测量从参考点设定信号输入的点到距离点 主体移动到受检者的头部上方，从而确定被检者的身材。

公开(公告)号：US07919365B2

公开(公告)日：2011-04-05

申请号：US11702211

申请日：2007-02-05

Applicant: Chang-Jung Kim ,  I-Hun Song ,  Dong-Hun Kang ,  Young-Soo Park ,  Eun-Ha Lee

Inventor： Chang-Jung Kim ,  I-Hun Song ,  Dong-Hun Kang ,  Young-Soo Park ,  Eun-Ha Lee

IPC: H01L21/00

CPC classification number: H01L29/7869 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/78618

Abstract: Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.

Abstract translation: 提供了制造ZnO薄膜结构和ZnO薄膜晶体管（TFT）的方法，以及ZnO薄膜结构和ZnO薄膜晶体管。 制造ZnO薄膜结构的方法可以包括在氧气氛中在衬底上形成ZnO薄膜，在ZnO薄膜上形成对氧具有亲和性的金属的氧扩散层，并加热ZnO薄膜和氧 扩散层将ZnO薄膜的氧气扩散到氧扩散层中。

公开(公告)号：US20080277663A1

公开(公告)日：2008-11-13

申请号：US11984072

申请日：2007-11-13

Applicant: Dong-hun Kang ,  I-hun Song ,  Elvira Fortunato ,  Rodrigo Martins

Inventor： Dong-hun Kang ,  I-hun Song ,  Elvira Fortunato ,  Rodrigo Martins

IPC: H01L29/10 ,  H01L21/84

CPC classification number: H01L29/7869 ,  H01L29/78606

Abstract: Provided is a thin film transistor that includes a substrate on which an insulating layer is formed, a gate formed on a region of the insulating layer, a gate insulating layer formed on the insulating layer and the gate, a channel region formed on the gate insulating layer on a region corresponding to the location of the gate, a source and a drain respectively formed by contacting either side of the channel region; and a passivation layer formed of a compound made of a group II element and a halogen element on the channel region.

Abstract translation: 提供一种薄膜晶体管，其包括其上形成有绝缘层的基板，形成在绝缘层的区域上的栅极，形成在绝缘层上的栅极绝缘层和栅极，形成在栅极绝缘上的沟道区域 在对应于栅极的位置的区域上分别形成一个源极和漏极，该漏极和漏极分别通过与沟道区域的任一侧接触; 以及由沟道区域上由II族元素和卤素元素制成的化合物形成的钝化层。

公开(公告)号：US20080258140A1

公开(公告)日：2008-10-23

申请号：US11978581

申请日：2007-10-30

Applicant: Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

Inventor： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

IPC: H01L29/04 ,  H01L21/34

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

Abstract: Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Abstract translation: 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

公开(公告)号：US07332740B2

公开(公告)日：2008-02-19

申请号：US11221864

申请日：2005-09-09

Applicant: Noe-jung Park ,  Kwang-hee Kim ,  Dong-hun Kang ,  Jae-woong Hyun ,  Ki-ha Hong

Inventor： Noe-jung Park ,  Kwang-hee Kim ,  Dong-hun Kang ,  Jae-woong Hyun ,  Ki-ha Hong

IPC: H01L35/24 ,  H01L51/00

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/0051 ,  H01L51/0512 ,  H01L51/052 ,  H01L51/0525 ,  Y10S977/742

Abstract: Provided is a memory device comprising a molecular adsorption layer. The memory device includes: a substrate; a source electrode and a drain electrode formed on the substrate and separated from each other; a carbon nanotube (CNT) layer electrically connected to the source electrode and the drain electrode; a memory cell contacting the CNT so as to store a charge from the CNT; and a gate electrode formed on the memory cell, wherein the memory cell comprises: a first insulating layer formed on the CNT; a molecular adsorption layer which is formed on the first insulating layer and acts as a charge storage layer; and a second insulating layer formed on the molecular adsorption layer.

Abstract translation: 提供了包含分子吸附层的记忆装置。 存储器件包括：衬底; 源电极和漏电极，形成在基板上并彼此分离; 电连接到源电极和漏电极的碳纳米管（CNT）层; 与CNT接触以存储来自CNT的电荷的存储单元; 以及形成在所述存储单元上的栅电极，其中所述存储单元包括：形成在所述CNT上的第一绝缘层; 分子吸附层，其形成在第一绝缘层上并用作电荷存储层; 以及形成在分子吸附层上的第二绝缘层。

公开(公告)号：US08618543B2

公开(公告)日：2013-12-31

申请号：US11978581

申请日：2007-10-30

Applicant: Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

Inventor： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

IPC: H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

Abstract: Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Abstract translation: 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。