摘要:
Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
摘要:
Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
摘要:
Example embodiments are directed to an off-axis projection optical system including first and second mirrors that are off-axially arranged. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2.
摘要:
An off-axis projection optical system including first and second mirrors that are off-axially arranged is provided. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation. R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2
摘要:
A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.
摘要:
In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.
摘要:
A photomask may include a reflection layer including a material capable of reflecting electromagnetic radiation, and at least one ion region. The ion region may be formed by implanting ions of an absorbent capable of absorbing electromagnetic radiation. The reflection layer may have a stack structure including a plurality of layers. The ions of the dopant may be implanted into at least one of the plurality of layers.
摘要:
Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 tan i 1 = l 2 ′ + l 2 l 2 tan i 2 .
摘要:
Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 tan i 1 = l 2 ′ + l 2 l 2 tan i 2 .
摘要:
A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and having reduced surface roughness to improve the hysteresis loop characteristics of the resulting MTJ structure. The bottom electrode layer may also combine the functions of both the seeding layer and bottom electrode of the conventional two-layer structure, thereby simplifying the manufacturing process.