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1.发明申请公开(公告)号：US20100314651A1
公开(公告)日：2010-12-16
申请号：US12835632
申请日：2010-07-13
Applicant: Chao-Kun LIN
Inventor： Chao-Kun LIN
IPC: H01L33/02
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/005 , H01L33/0079 , H01L33/405 , H01L33/46 , H01L33/62 , H01L33/64 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2933/0066 , H01L2933/0075 , H01L2933/0091 , H01L2924/00014 , H01L2924/00
Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.
Abstract translation: 薄膜LED包括绝缘基板，绝缘基板上的电极和电极上的外延结构。
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公开(公告)号：US20090242924A1
公开(公告)日：2009-10-01
申请号：US12120051
申请日：2008-05-13
Applicant: Chao-Kun LIN , Heng Liu
Inventor： Chao-Kun LIN , Heng Liu
CPC classification number: H01L33/36 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/12044 , H01L2924/00 , H01L2224/05599
Abstract: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
Abstract translation: 一种发光二极管，包括外延层结构，第一电极和第二电极。 第一和第二电极分别设置在外延层结构上，外延层结构在形成第一电极的表面处具有小于约3的均方根（RMS）粗糙度。
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3.发明申请THIN-FILM LED WITH P AND N CONTACTS ELECTRICALL ISOLATED FROM THE SUBSTRATE 审中-公开带有P和N触点的薄膜LED从基板电隔离公开(公告)号：US20100314649A1
公开(公告)日：2010-12-16
申请号：US12790597
申请日：2010-05-28
Applicant: Chao-Kun LIN
Inventor： Chao-Kun LIN
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/005 , H01L33/0079 , H01L33/405 , H01L33/46 , H01L33/62 , H01L33/64 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2933/0066 , H01L2933/0075 , H01L2933/0091 , H01L2924/00014 , H01L2924/00
Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.
Abstract translation: 薄膜LED包括绝缘基板，绝缘基板上的电极和电极上的外延结构。
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公开(公告)号：US20090242929A1
公开(公告)日：2009-10-01
申请号：US12113556
申请日：2008-05-01
Applicant: Chao-Kun LIN
Inventor： Chao-Kun LIN
CPC classification number: H01L33/145 , H01L33/0079
Abstract: A light emitting diode including an epitaxial layer structure, a first electrode formed on the epitaxial layer structure, and a second electrode formed on the epitaxial layer structure. The first electrode has a pattern and the second electrode has a portion aligned with the pattern of the first electrode. The portion of the second electrode forms a non-ohmic contact with the epitaxial layer structure.
Abstract translation: 包括外延层结构的发光二极管，形成在外延层结构上的第一电极和形成在外延层结构上的第二电极。 第一电极具有图案，第二电极具有与第一电极的图案对准的部分。 第二电极的部分与外延层结构形成非欧姆接触。
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