摘要:
A test system is added to a substrate and a test mode of operation is added to the timing and control functions of a system on the substrate. When a multifunctional system on the substrate is tested, a first functional subsystem is connected to an external tester. The tester causes the timing and control system to enter the test mode of operation. When in the test mode of operation, the test system provides a signal derived from a signal generator on the substrate. The generated signal is coupled to a second functional subsystem so that functional independence of the first and second subsystems can be verified.
摘要:
A system has multiple subsystems and a test signal source resident upon a common substrate. A first subsystem interfaces with an off-substrate functional tester during a test. The test signal source generates a first signal during the test for input to the second subsystem. The second subsystem responds performing an operation independent of operation and current state of the first subsystem. The functional tester verifies the independent operation of the first and second subsystems.
摘要:
A system has multiple subsystems and a test signal source resident upon a common substrate. A first subsystem interfaces with an off-substrate functional tester during a test. The test signal source generates a first signal during the test for input to the second subsystem. The second subsystem responds performing an operation independent of operation and current state of the first subsystem. The functional tester verifies the independent operation of the first and second subsystems.
摘要:
A method of monitoring the characteristics of a delay locked loop (DLL) in a memory device during a test mode is provided. The DLL generates an internal clock signal based on an external clock signal. The external and internal clock signals are normally synchronized. DLL constantly responds to variations in operating condition of the memory device to keep the external and internal clock synchronized. The method involves preventing the DLL from responding to a change in operating condition such as a change in the supply voltage of the memory device during a test mode.
摘要:
A voltage elevation circuit supplying additional voltage for gate switching having an elevated power supply connected to a first node of a capacitor using a transistor. The elevated power supply and booting circuit providing additional voltage for gate switching applications. One application is a MOSFET output driver application having a 3 Volt power supply. One configuration using a switch to charge a capacitor using a first voltage supply and then providing additional voltage by a boot device and by switching in an elevated power supply to maintain an elevated voltage at the node.
摘要:
A voltage elevation circuit supplying additional voltage for gate switching having an elevated power supply connected to a first node of a capacitor using a transistor. The elevated power supply and booting circuit providing additional voltage for gate switching applications. One application is a MOSFET output driver application having a 3 Volt power supply where noise margin demands elevated switching voltages. One configuration using a long channel transistor to limit current sourced by the elevated power supply. An alternate configuration using a switched elevated power supply to minimize loading on the elevated power supply.
摘要:
The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be written independently of a second bank, such that during a single memory cycle the first bank may be written and the second bank may be read. The VRAM of the invention functions without the masking of a write to either bank. In addition the write memory function can be performed either through the random access memory port or through the serial access memory port.
摘要:
The invention is a monolithic memory device having a circuit and a method for decreasing the cell margin during a test mode. Decreasing the cell margin stresses the memory device during the test mode greater than a stress experienced during normal operation, thus test time can be decreased.
摘要:
An ATM switch including a multi-port memory is described. The multi-port memory having a dynamic random access memory (DRAM) and a plurality of input and output serial access memories (SAMs). Efficient, flexible transfer circuits and methods are described for transferring ATM data between the SAMs and the DRAM. The transfer circuits and methods include helper flip/flops to latch ATM data for editing prior to storage in the DRAM. Editing of ATM data transferred from the DRAM is also described. Dynamic parity generation and checking is described to detect errors induced during switching.
摘要:
A multiport memory is described which includes a random access memory (RAM) and serial access memories (SAMs). The multiport memory is well suited for storing asynchronous transfer mode (ATM) data cells. Control circuitry is provided to allow the multiport memory to be easily configured for operating at different input data rates. This is accomplished by configuring several of the SAMs to store a portion of an input ATM cell on an input clock cycle. The full ATM cell is stored in less clock cycles and can be transferred from the SAMs to the RAM in a single transfer cycle.