公开(公告)号：US20120067408A1

公开(公告)日：2012-03-22

申请号：US12884049

申请日：2010-09-16

申请人： Charlie Hotz ,  Margaret Hines ,  Donald Zehnder ,  Damoder Reddy ,  Jing Tang

发明人： Charlie Hotz ,  Margaret Hines ,  Donald Zehnder ,  Damoder Reddy ,  Jing Tang

IPC分类号： H01L31/0352 ,  H01B1/02 ,  H01B1/12 ,  H01L31/18

CPC分类号： H01L31/20 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention discloses an absorber composition and photovoltaic device (PV) using the composition comprising nanoparticles and/or sintered nanoparticles comprising compounds having the formula MAxMByMCz(LAaLBb)4 where MA, MB and MC comprise elements chosen from the group consisting of Fe, Co, Ni, Cu, Zn, Cd, Sn and Pb, LA and LB are chalcogens and x is between 1.5 and 2.2, y and z are independently the same or different and are between 0.5 and 1.5 and (a+b)=1.Particularly preferred synthetic routes to uniform thin films in PV devices comprising sintered nanoparticles of Cu2ZnSnSe4 and Cu2ZnSnS4 are disclosed.

摘要翻译： 本发明公开了使用包含纳米颗粒和/或烧结纳米颗粒的组合物的吸收剂组合物和光伏器件（PV），其包含具有式MAxMByMCz（LAaLBb）4的化合物，其中MA，MB和MC包含选自Fe，Co ，Ni，Cu，Zn，Cd，Sn和Pb，LA和LB是硫属元素，x在1.5和2.2之间，y和z独立相同或不同，在0.5和1.5之间，（a + b）= 1。 公开了在包括Cu 2 ZnSnSn 4和Cu 2 ZnSn Sn的烧结纳米颗粒的PV装置中均匀薄膜的特别优选的合成路线。

公开(公告)号：US20090235986A1

公开(公告)日：2009-09-24

申请号：US12381637

申请日：2009-03-13

申请人： Charlie Hotz ,  Puthur D. Paulson ,  Craig Leidholm ,  Damoder Reddy

发明人： Charlie Hotz ,  Puthur D. Paulson ,  Craig Leidholm ,  Damoder Reddy

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543

摘要： The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device.The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

摘要翻译： 本发明公开了包括II-VI族半导体层的薄膜光伏器件，其具有在背电极和吸收层之间具有能够在器件中产生欧姆接触的界面层的衬底结构。 本发明公开了包含II-VI族半导体层的薄膜光伏器件，其具有在背面电极和吸收层之间具有界面层的上层结构，能够在器件中产生欧姆接触，其中界面层包含纳米颗粒或纳米颗粒， 烧结。

公开(公告)号：US20110061737A1

公开(公告)日：2011-03-17

申请号：US12951057

申请日：2010-11-21

申请人： Charlie Hotz ,  Puther D. Paulson ,  Craig Leidholm ,  Damoder Reddy

发明人： Charlie Hotz ,  Puther D. Paulson ,  Craig Leidholm ,  Damoder Reddy

IPC分类号： H01L31/0264

CPC分类号： H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543

摘要： The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device.The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

摘要翻译： 本发明公开了包括II-VI族半导体层的薄膜光伏器件，其具有在背电极和吸收层之间具有能够在器件中产生欧姆接触的界面层的衬底构型。 本发明公开了包含II-VI族半导体层的薄膜光伏器件，其具有在背面电极和吸收层之间具有界面层的上层结构，能够在器件中产生欧姆接触，其中界面层包含纳米颗粒或纳米颗粒， 烧结。

公开(公告)号：US20100229931A1

公开(公告)日：2010-09-16

申请号：US12657872

申请日：2010-01-28

申请人： Damoder Reddy ,  Charlie Hotz ,  Puthur D. Paulson ,  Craig Leidholm

发明人： Damoder Reddy ,  Charlie Hotz ,  Puthur D. Paulson ,  Craig Leidholm

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/022466 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.

摘要翻译： 公开了一种新颖的薄膜光伏器件及其制造方法。 该装置包括在吸收层和电极之间的界面层，从而改善了背面接触并提高了装置效率。 界面层包括包含Ma-（VIA）b化合物的材料，其中M是VIA族代表Te，Se和/或S的过渡金属。

公开(公告)号：US20090242029A1

公开(公告)日：2009-10-01

申请号：US12383532

申请日：2009-03-24

申请人： Puthur Paulson ,  Charlie Hotz ,  Craig Leidholm ,  Damoder Reddy

发明人： Puthur Paulson ,  Charlie Hotz ,  Craig Leidholm ,  Damoder Reddy

IPC分类号： H01L31/0256 ,  H01L31/18

CPC分类号： H01L31/1836 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/54 ,  C23C14/562 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions.The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.

摘要翻译： 本发明公开了包含II-VI族半导体层的薄膜光伏器件，其具有在吸收层和窗口层之间具有界面层的衬底结构，以形成改善的结。 本发明还公开了用于制造和表面处理薄膜光伏器件的方法，该器件包括具有衬底配置的II-VI族半导体层以产生具有改进结的器件。

公开(公告)号：US08410357B2

公开(公告)日：2013-04-02

申请号：US12657872

申请日：2010-01-28

申请人： Puthur D. Paulson ,  Craig Leidholm ,  Damoder Reddy ,  Charlie Hotz

发明人： Puthur D. Paulson ,  Craig Leidholm ,  Damoder Reddy ,  Charlie Hotz

IPC分类号： H01L31/00

CPC分类号： H01L31/022466 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.

摘要翻译： 公开了一种新颖的薄膜光伏器件及其制造方法。 该装置包括在吸收层和电极之间的界面层，从而改善了背面接触并提高了装置效率。 界面层包括包含Ma-（VIA）b化合物的材料，其中M是VIA族代表Te，Se和/或S的过渡金属。

公开(公告)号：US08143512B2

公开(公告)日：2012-03-27

申请号：US12383532

申请日：2009-03-24

申请人： Puthur D. Paulson ,  Charlie Hotz ,  Craig Leidholm ,  Damoder Reddy

发明人： Puthur D. Paulson ,  Charlie Hotz ,  Craig Leidholm ,  Damoder Reddy

IPC分类号： H01L31/00

CPC分类号： H01L31/1836 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/54 ,  C23C14/562 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions.The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.

摘要翻译： 本发明公开了包含II-VI族半导体层的薄膜光伏器件，其具有在吸收层和窗口层之间具有界面层的衬底结构，以形成改善的结。 本发明还公开了用于制造和表面处理薄膜光伏器件的方法，该器件包括具有衬底配置的II-VI族半导体层以产生具有改进结的器件。

公开(公告)号：US07858872B2

公开(公告)日：2010-12-28

申请号：US12381637

申请日：2009-03-13

申请人： Charlie Hotz ,  Puthur D. Paulson ,  Craig Leidholm ,  Damoder Reddy

发明人： Charlie Hotz ,  Puthur D. Paulson ,  Craig Leidholm ,  Damoder Reddy

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543

摘要： The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device.The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

摘要翻译： 本发明公开了包括II-VI族半导体层的薄膜光伏器件，其具有在背电极和吸收层之间具有能够在器件中产生欧姆接触的界面层的衬底结构。 本发明公开了包含II-VI族半导体层的薄膜光伏器件，其具有在背面电极和吸收层之间具有界面层的上层结构，能够在器件中产生欧姆接触，其中界面层包含纳米颗粒或纳米颗粒， 烧结。

公开(公告)号：US20060180890A1

公开(公告)日：2006-08-17

申请号：US11335043

申请日：2006-01-18

申请人： W. Naugler ,  Damoder Reddy ,  Gordon Liu

发明人： W. Naugler ,  Damoder Reddy ,  Gordon Liu

IPC分类号： H01L31/00

CPC分类号： H01L27/3269 ,  H01L27/12 ,  H01L27/3272 ,  H01L51/5234 ,  H01L2251/5315 ,  H01L2251/5323

摘要： The present invention discloses novel top emitter pixel circuitry for flat panel displays. Sensor material is deposited above a substrate. A pixilated opaque cathode is deposited above the sensor material. Organic light emitting diode material is deposited above the cathode. A transparent anode is deposited above the OLED material. Some of the layers have dielectric layers between them. The light emitted by the OLED material passes upwards through the transparent anode but cannot pass downwards through the opaque cathode. A deep via optically connects the OLED material layer with the sensor material layer. A transparent cathode can be used instead of the opaque cathode, thereby allowing the light generated by the OLED material layer to pass both upward through the transparent anode and downward through the transparent cathode. That would eliminate the need for a deep via to form an optical path between the OLED material layer and the sensor layer. However, that would require the addition of a shield to shield the active matrix circuitry from the light generated by the OLED material layer.

摘要翻译： 本发明公开了一种用于平板显示器的新型顶部发射极像素电路。 传感器材料沉积在衬底上方。 像素化不透明阴极沉积在传感器材料上方。 有机发光二极管材料沉积在阴极上方。 透明阳极沉积在OLED材料上方。 一些层之间具有介电层。 由OLED材料发射的光向上通过透明阳极，但不能向下穿过不透明阴极。 深通孔将OLED材料层与传感器材料层光学连接。 可以使用透明阴极代替不透明阴极，从而使由OLED材料层产生的光向上穿过透明阳极并向下通过透明阴极。 这将消除对深通孔的需要以在OLED材料层和传感器层之间形成光路。 然而，这将需要添加屏蔽以将有源矩阵电路与由OLED材料层产生的光屏蔽。

公开(公告)号：US20060007249A1

公开(公告)日：2006-01-12

申请号：US11016137

申请日：2004-12-17

申请人： Damoder Reddy ,  Walter Naugler

发明人： Damoder Reddy ,  Walter Naugler

IPC分类号： G09G5/10

CPC分类号： G09G3/3233 ,  G06F3/03542 ,  G06F3/0386 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04109 ,  G09G3/3275 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2310/066 ,  G09G2320/0233 ,  G09G2320/029 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2320/0693 ,  G09G2360/142 ,  G09G2360/147 ,  G09G2360/148 ,  H01L27/1446 ,  H01L27/288 ,  H01L27/3227 ,  H01L27/323 ,  H01L27/3269 ,  H01L27/3272 ,  H01L2251/5315

摘要： System and method for controlling luminance of pixel in display. Method includes storing transformation between digital image gray level value and display drive signal that generates luminance from pixel corresponding to digital gray level value; identifying target gray level value for particular pixel; generating display drive signal corresponding to identified target gray level based on stored transformation and driving particular pixel with drive signal during first display frame; measuring parameter representative of actual measured luminance of particular pixel at a second time after the first time; determining difference between identified target luminance and actual measured luminance; modifying stored transformation for particular pixel based on determined difference; and storing and using modified transformation for generating display drive signal for particular pixel during frame time following first frame time. Control system and circuits for controlling the luminance of a picture element or pixel in a display device.

摘要翻译： 控制显示像素亮度的系统和方法。 方法包括存储数字图像灰度值与从数字灰度值对应的像素产生亮度的显示驱动信号之间的变换; 识别特定像素的目标灰度值; 基于存储的变换产生对应于所识别的目标灰度级的显示驱动信号，并在第一显示帧期间驱动具有驱动信号的特定像素; 在第一次之后的第二时间测量代表特定像素的实际测量亮度的参数; 确定所识别的目标亮度和实际测量亮度之间的差异; 基于确定的差异来修改特定像素的存储变换; 以及在第一帧时间之后的帧时间期间存储并使用用于产生特定像素的显示驱动信号的修改变换。 用于控制显示装置中的像素或像素的亮度的控制系统和电路。