利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

68 条记录 (耗时 0.027 秒)

    Polysilicon gate formation by in-situ doping
    2.
    发明申请
    Polysilicon gate formation by in-situ doping 审中-公开
    通过原位掺杂形成多晶硅栅

    公开(公告)号：US20080194072A1

    公开(公告)日：2008-08-14

    申请号：US11705655

    申请日：2007-02-12

    申请人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Chu-Yun Fu ,  Liang-Gi Yao ,  Chen-Nan Yeh

    发明人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Chu-Yun Fu ,  Liang-Gi Yao ,  Chen-Nan Yeh

    IPC分类号： H01L21/336

    CPC分类号： H01L21/82345 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848

    摘要： A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a first silicon-containing layer on the gate dielectric layer, wherein the first silicon-containing layer is substantially free from p-type and n-type impurities; forming a second silicon-containing layer over the first silicon-containing layer, wherein the second silicon-containing layer comprises an impurity; and performing an annealing to diffuse the impurity in the second silicon-containing layer into the first silicon-containing layer.

    摘要翻译： 一种形成半导体结构的方法包括提供半导体衬底; 在所述半导体衬底上形成栅介电层; 在所述栅极电介质层上形成第一含硅层，其中所述第一含硅层基本上不含p型和n型杂质; 在所述第一含硅层上形成第二含硅层，其中所述第二含硅层包含杂质; 并进行退火以将第二含硅层中的杂质扩散到第一含硅层中。

    Method of fabricating semiconductor device isolation structure
    5.
    发明授权
    Method of fabricating semiconductor device isolation structure 有权
    制造半导体器件隔离结构的方法

    公开(公告)号：US08110890B2

    公开(公告)日：2012-02-07

    申请号：US11758043

    申请日：2007-06-05

    申请人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    发明人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    IPC分类号： H01L21/70

    CPC分类号： H01L21/76202 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L21/762 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

    摘要翻译： 包括可折入隔离结构的半导体器件和用于制造这种器件的方法。 优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。 至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。 在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

    Method of fabricating semiconductor device isolation structure
    6.
    发明授权
    Method of fabricating semiconductor device isolation structure 有权
    制造半导体器件隔离结构的方法

    公开(公告)号：US09224606B2

    公开(公告)日：2015-12-29

    申请号：US13336887

    申请日：2011-12-23

    申请人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    发明人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    IPC分类号： H01L21/76 ,  H01L21/265 ,  H01L29/66 ,  H01L29/78

    CPC分类号： H01L21/76202 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L21/762 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

    摘要翻译： 包括可折入隔离结构的半导体器件和用于制造这种器件的方法。 优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。 至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。 在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

    Method of Fabricating Semiconductor Device Isolation Structure
    8.
    发明申请
    Method of Fabricating Semiconductor Device Isolation Structure 审中-公开
    制造半导体器件隔离结构的方法

    公开(公告)号：US20120094464A1

    公开(公告)日：2012-04-19

    申请号：US13336887

    申请日：2011-12-23

    申请人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    发明人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76202 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L21/762 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

    摘要翻译： 包括可折入隔离结构的半导体器件和用于制造这种器件的方法。 优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。 至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。 在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

    Method of Fabricating Semiconductor Device Isolation Structure
    9.
    发明申请
    Method of Fabricating Semiconductor Device Isolation Structure 有权
    制造半导体器件隔离结构的方法

    公开(公告)号：US20080303104A1

    公开(公告)日：2008-12-11

    申请号：US11758043

    申请日：2007-06-05

    申请人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    发明人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    IPC分类号： H01L29/94

    CPC分类号： H01L21/76202 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L21/762 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

    摘要翻译： 包括可折入隔离结构的半导体器件和用于制造这种器件的方法。 优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。 至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。 在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

    Fabrication of FinFETs with multiple fin heights
    10.
    发明授权
    Fabrication of FinFETs with multiple fin heights 有权
    具有多个翅片高度的FinFET的制造

    公开(公告)号：US07612405B2

    公开(公告)日：2009-11-03

    申请号：US11714644

    申请日：2007-03-06

    申请人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Yu-Rung Hsu

    发明人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Yu-Rung Hsu

    IPC分类号： H01L29/76

    CPC分类号： H01L29/785 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795

    摘要： A semiconductor structure includes a first semiconductor strip extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the first semiconductor strip has a first height. A first insulating region is formed in the semiconductor substrate and surrounding a bottom portion of the first semiconductor strip, wherein the first insulating region has a first top surface lower than a top surface of the first semiconductor strip. A second semiconductor strip extends from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the second semiconductor strip has a second height greater than the first height. A second insulating region is formed in the semiconductor substrate and surrounding a bottom portion of the second semiconductor strip, wherein the second insulating region has a second top surface lower than the first top surface, and wherein the first and the second insulating regions have substantially same thicknesses.

    摘要翻译： 半导体结构包括从半导体衬底的顶表面延伸到半导体衬底中的第一半导体条，其中第一半导体条具有第一高度。 第一绝缘区域形成在半导体衬底中并围绕第一半导体条的底部，其中第一绝缘区具有比第一半导体条的顶表面低的第一顶表面。 第二半导体条从半导体衬底的顶表面延伸到半导体衬底中，其中第二半导体条的第二高度大于第一高度。 第二绝缘区域形成在半导体衬底中并围绕第二半导体条的底部，其中第二绝缘区域具有比第一顶表面低的第二顶表面，并且其中第一绝缘区域和第二绝缘区域基本相同 厚度