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    Copper wiring with high temperature superconductor (HTS) layer
    1.
    发明申请
    Copper wiring with high temperature superconductor (HTS) layer 有权
    铜线与高温超导体（HTS）层

    公开(公告)号：US20050077627A1

    公开(公告)日：2005-04-14

    申请号：US10684224

    申请日：2003-10-10

    申请人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Chenming Hu ,  Chao-Hsiung Wang

    发明人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Chenming Hu ,  Chao-Hsiung Wang

    IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/4763 ,  H01L23/48

    CPC分类号： H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Semiconductor devices and methods of forming the semiconductor devices using an HTS (High Temperature Superconductor) layer in combination with a typical diffusion layer between the dielectric material and the copper (or other metal) conductive wiring. The HTS layer includes a superconductor material comprised of barium copper oxide and a rare earth element. The rare earth element yttrium is particularly suitable. For semiconductor devices having other semiconductor circuits or elements above the wiring, a capping layer of HTS material is deposited over the wiring before a cover layer of dielectric is deposited.

    摘要翻译： 使用HTS（高温超导体）层与介电材料和铜（或其它金属）导电布线之间的典型扩散层组合形成半导体器件的半导体器件和方法。 HTS层包括由氧化钡钡和稀土元素构成的超导体材料。 稀土元素钇特别适合。 对于具有其它半导体电路或布线之上的元件的半导体器件，在沉积覆盖层的电介质之前，在布线上沉积HTS材料的覆盖层。

    Copper wiring with high temperature superconductor (HTS) layer
    2.
    发明授权
    Copper wiring with high temperature superconductor (HTS) layer 有权
    铜线与高温超导体（HTS）层

    公开(公告)号：US07105928B2

    公开(公告)日：2006-09-12

    申请号：US10684224

    申请日：2003-10-10

    申请人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Chenming Hu ,  Chao-Hsiung Wang

    发明人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Chenming Hu ,  Chao-Hsiung Wang

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Semiconductor devices and methods of forming the semiconductor devices using an HTS (High Temperature Superconductor) layer in combination with a typical diffusion layer between the dielectric material and the copper (or other metal) conductive wiring. The HTS layer includes a superconductor material comprised of barium copper oxide and a rare earth element. The rare earth element yttrium is particularly suitable. For semiconductor devices having other semiconductor circuits or elements above the wiring, a capping layer of HTS material is deposited over the wiring before a cover layer of dielectric is deposited.

    摘要翻译： 使用HTS（高温超导体）层与介电材料和铜（或其它金属）导电布线之间的典型扩散层组合形成半导体器件的半导体器件和方法。 HTS层包括由氧化钡钡和稀土元素构成的超导体材料。 稀土元素钇特别适合。 对于具有其它半导体电路或布线之上的元件的半导体器件，在沉积覆盖层的电介质之前，在布线上沉积HTS材料的覆盖层。

    Interconnect with composite barrier layers and method for fabricating the same
    5.
    发明授权
    Interconnect with composite barrier layers and method for fabricating the same 有权
    与复合阻挡层互连及其制造方法

    公开(公告)号：US06958291B2

    公开(公告)日：2005-10-25

    申请号：US10654757

    申请日：2003-09-04

    申请人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Syun-Ming Jang ,  Chenming Hu

    发明人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Syun-Ming Jang ,  Chenming Hu

    IPC分类号： H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76846

    摘要： Composite ALD-formed diffusion barrier layers. In a preferred embodiment, a composite conductive layer is composed of a diffusion barrier layer and/or a low-resistivity metal layer formed by atomic layer deposition (ALD) lining a damascene opening in dielectrics, serving as diffusion blocking and/or adhesion improvement. The preferred composite diffusion barrier layers are dual titanium nitride layers or dual tantalum nitride layers, triply laminar of tantalum, tantalum nitride and tantalum-rich nitride, or tantalum, tantalum nitride and tantalum, formed sequentially on the opening by way of ALD.

    摘要翻译： 复合ALD形成的扩散阻挡层。 在优选实施例中，复合导电层由扩散阻挡层和/或由电介质中的镶嵌开口衬底的原子层沉积（ALD）形成的低电阻金属层组成，用作扩散阻挡和/或粘附改善。 优选的复合扩散阻挡层是通过ALD在开口上依次形成的双氮化钛层或双氮化钽层，三层层状的钽，氮化钽和富钽的氮化物，或钽，氮化钽和钽。

    Interconnect with composite layers and method for fabricating the same
    6.
    发明授权
    Interconnect with composite layers and method for fabricating the same 有权
    与复合层互连及其制造方法

    公开(公告)号：US07265447B2

    公开(公告)日：2007-09-04

    申请号：US11240216

    申请日：2005-09-30

    申请人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Syun-Ming Jang ,  Chenming Hu

    发明人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Syun-Ming Jang ,  Chenming Hu

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76846

    摘要： Composite ALD-formed diffusion barrier layers. In a preferred embodiment, a composite conductive layer is composed of a diffusion barrier layer and/or a low-resistivity metal layer formed by atomic layer deposition (ALD) lining a damascene opening in dielectrics, serving as diffusion blocking and/or adhesion improvement. The preferred composite diffusion barrier layers are dual titanium nitride layers or dual tantalum nitride layers, triply laminar of tantalum, tantalum nitride and tantalum-rich nitride, or tantalum, tantalum nitride and tantalum, formed sequentially on the opening by way of ALD.

    摘要翻译： 复合ALD形成的扩散阻挡层。 在优选实施例中，复合导电层由扩散阻挡层和/或由电介质中的镶嵌开口衬底的原子层沉积（ALD）形成的低电阻金属层组成，用作扩散阻挡和/或粘附改善。 优选的复合扩散阻挡层是通过ALD在开口上依次形成的双氮化钛层或双氮化钽层，三层层状的钽，氮化钽和富钽的氮化物，或钽，氮化钽和钽。

    Interconnect with composite barrier layers and method for fabricating the same
    8.
    发明申请
    Interconnect with composite barrier layers and method for fabricating the same 有权
    与复合阻挡层互连及其制造方法

    公开(公告)号：US20060027932A1

    公开(公告)日：2006-02-09

    申请号：US11240216

    申请日：2005-09-30

    申请人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Syun-Ming Jang ,  Chenming Hu

    发明人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Syun-Ming Jang ,  Chenming Hu

    IPC分类号： H01L23/48 ,  H01L23/52

    CPC分类号： H01L21/76846

    摘要： Composite ALD-formed diffusion barrier layers. In a preferred embodiment, a composite conductive layer is composed of a diffusion barrier layer and/or a low-resistivity metal layer formed by atomic layer deposition (ALD) lining a damascene opening in dielectrics, serving as diffusion blocking and/or adhesion improvement. The preferred composite diffusion barrier layers are dual titanium nitride layers or dual tantalum nitride layers, triply laminar of tantalum, tantalum nitride and tantalum-rich nitride, or tantalum, tantalum nitride and tantalum, formed sequentially on the opening by way of ALD.

    摘要翻译： 复合ALD形成的扩散阻挡层。 在优选实施例中，复合导电层由扩散阻挡层和/或由电介质中的镶嵌开口衬底的原子层沉积（ALD）形成的低电阻金属层组成，用作扩散阻挡和/或粘附改善。 优选的复合扩散阻挡层是通过ALD在开口上依次形成的双氮化钛层或双氮化钽层，三层层状的钽，氮化钽和富钽的氮化物，或钽，氮化钽和钽。

    Magnetic shielding for magnetically sensitive semiconductor devices
    10.
    发明授权
    Magnetic shielding for magnetically sensitive semiconductor devices 有权
    磁敏半导体器件的磁屏蔽

    公开(公告)号：US07183617B2

    公开(公告)日：2007-02-27

    申请号：US11060000

    申请日：2005-02-17

    申请人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang

    发明人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang

    IPC分类号： H01L27/14

    CPC分类号： H01L23/552 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01025 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2224/0401

    摘要： A magnetic shielding device is provided for protecting at least one magnetically sensitive component on a substrate according to embodiments of the present invention. The device comprises a first shield having a top portion, and one or more side portions, wherein the top and side portions along with the substrate encloses the magnetic sensitive component within for protecting the same from an external magnetic field, and wherein the magnetic shielding device contains at least two magnetic shielding materials with one having a relatively higher magnetic permeability property but lower magnetic saturation property while the other having a relatively lower magnetic permeability property but higher magnetic saturation property.

    摘要翻译： 根据本发明的实施例，提供了一种磁屏蔽装置，用于保护基板上的至少一个磁敏部件。 该装置包括具有顶部部分和一个或多个侧部部分的第一屏蔽件，其中顶部和侧部与基板一起包围磁敏部件，以便将其与外部磁场保护起来，并且其中磁屏蔽装置 包含至少两个磁屏蔽材料，具有较高磁导率性能但具有较低磁饱和性能的磁屏蔽材料，而另一种具有较低的磁导率性能但较高的磁饱和性能。