Abstract:
A gate signal adjustment circuit for a display is disclosed. The gate signal adjustment circuit can adjust a transition time of a gate signal used to drive data displaying. The adjustment can be to either speed up or slow down the transition time according to the requirements of the display. In an example, the gate signal adjustment circuit can include multiple transistors, where a first set of the transistors outputs the gate signal and a second set of the transistors outputs an adjustment to the gate signal. The second set of transistors can be the same or different sizes depending on the desirable number of adjustment options. The circuit can also include a control line coupled to the second set of transistors to control the adjustment output. Gate signal adjustment can reduce crosstalk in the display.
Abstract:
Disclosed embodiments relate to signal routings for use in a display device. The display device may include a liquid crystal display (LCD) panel having multiple pixels arranged in rows and columns. Each of the pixels includes a pixel electrode and a thin-film transistor (TFT). The LCD may include a conductive signal routing portion having a first metallic layer, a second metallic layer formed directly on the first metallic layer, and a third metallic layer formed directly on the second metallic layer. The first metallic layer may include a contact terminal. The second metallic layer when combined with the third metallic layers may decrease the resistance of the third metallic layer.
Abstract:
A display may have a thin-film-transistor layer with a substrate layer. A layer of dielectric may be formed on the substrate layer and may have an upper surface and a lower surface. The thin-film-transistor layer may include an array of display pixels. Data lines and gate lines may provide signals to the display pixels. Gate driver circuitry in an inactive peripheral portion of the display may include a gate driver circuit for each gate line. The gate driver circuits may include thin-film transistors that are formed on the upper surface of the layer of dielectric. Signal lines such as a gate low line, a gate routing line coupled between the gate driver circuits, and a common electrode line may be formed from two or more layers of metal to reduce their widths or may be embedded within the dielectric layer between the upper and lower surfaces under the thin-film transistors.
Abstract:
A system for displaying images is provided. A capacitor type digital-to-analog converter is coupled between a first node and a second node and generates a first analog signal according to a digital signal with N bit data. An analogue buffer is coupled between the second node and a third node and generates a second analog signal according to the first analog signal and a bias voltage. A first switch is coupled between a predetermined voltage and the second node. A second switch is coupled between the first node and the third node. A third switch is coupled between the third node and an analog output signal. The second switch is turned on and the third switch is turned off when the first switch is turned on, and the first and second switches are turned off when the third switch is turned on.
Abstract:
A measuring system comprises a pulse generator, an under test device, a variable resistor and a detecting control system. The pulse generator provides pulse signals with different voltage peaks to the under test device and the variable resistor. The variable resistor adjusts its resistance value according to a control signal. The detecting control system detects the voltage ringing ranges of the first terminal of the under test device at different resistance values. The detecting control system generates the control signal to adjust the resistance value of the variable resistor according to the voltage ringing ranges.
Abstract:
Methods and devices for shielding displays from electrostatic discharge (ESD) are provided. In one example, a display of an electronic device may include a high resistivity shielding layer configured to protect electrical components from static charges. The display may also include a conductive layer electrically coupled to the high resistivity shielding layer and configured to decrease a discharge time of static charges from the high resistivity shielding layer. The display may include a grounding layer and a conductor electrically coupled between the conductive layer and the grounding layer to direct static charges from the conductive layer to the grounding layer.
Abstract:
A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack that includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area, and doping the second portion of the doped semiconductor layer with a third doping dose.
Abstract:
The antenna on hand held devices, such as the iPhone or iPad, can be subject to interference from other circuitry on the device. Such interference may come from high frequency switching of nearby display circuitry, such as de-multiplexors or other circuits. To address this issue, the switching rates may be slowed in certain circuits by adding resistance and/or capacitance, thus raising the RC time constant and slowing the switching times to reduce the high frequency components. Alternatively or in addition to, an EMI shield can be placed over some or all of the display driving circuitry to shield the antenna from high frequency interference.
Abstract:
A measuring system comprises a pulse generator, an under test device, a variable resistor and a detecting control system. The pulse generator provides pulse signals with different voltage peaks to the under test device and the variable resistor. The variable resistor adjusts its resistance value according to a control signal. The detecting control system detects the voltage ringing ranges of the first terminal of the under test device at different resistance values. The detecting control system generates the control signal to adjust the resistance value of the variable resistor according to the voltage ringing ranges.
Abstract:
A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack that includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area, and doping the second portion of the doped semiconductor layer with a third doping dose.