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公开(公告)号：US07420417B2
公开(公告)日：2008-09-02
申请号：US11446204
申请日：2006-06-05
申请人： Cheng-Kuo Lin , Wei-Der Chang , Yu-Chi Wang
发明人： Cheng-Kuo Lin , Wei-Der Chang , Yu-Chi Wang
IPC分类号： H03F3/16
CPC分类号： H03F1/301 , H03F1/223 , H03F3/19 , H03F2200/18 , H03F2200/294 , H03F2200/451
摘要： A two-port dual-gate field-effect transistor for amplifier applications, wherein a self-bias circuit includes a number of passive elements, such as resistors, diodes and capacitors, is utilized to coupled the output of the amplifier with a second gate of the dual-gate device as a bias source, which transforms the conventional three-port cascade topology into a two-port dual-gate device so as to facilitate device testing, modeling, and packaging for discrete device application. The technology improves the RF performance in conventional two-port single-gate HEMT devices, with slight noise figure degradation.
摘要翻译： 一种用于放大器应用的双端口双栅极场效应晶体管，其中自偏置电路包括多个无源元件，例如电阻器，二极管和电容器，用于将放大器的输出端与第二栅极 双栅极器件作为偏置源，其将传统的三端口级联拓扑转换为双端口双栅极器件，以便于用于分立器件应用的器件测试，建模和封装。 该技术改进了传统双端口单栅极HEMT器件的射频性能，轻微的噪声系数下降。
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公开(公告)号：US20070290762A1
公开(公告)日：2007-12-20
申请号：US11446204
申请日：2006-06-05
申请人： Cheng-Kuo Lin , Wei-Der Chang , Yu-Chi Wang
发明人： Cheng-Kuo Lin , Wei-Der Chang , Yu-Chi Wang
IPC分类号： H03F3/04
CPC分类号： H03F1/301 , H03F1/223 , H03F3/19 , H03F2200/18 , H03F2200/294 , H03F2200/451
摘要： A two-port dual-gate field-effect transistor for amplifier applications, wherein a self-bias circuit comprising a number of passive elements, such as resistors, diodes and capacitors, is utilized to coupled the output of the amplifier with a second gate of the dual-gate device as a bias source, which transforms the conventional three-port cascode topology into a two-port dual-gate device so as to facilitate device testing, modeling, and packaging for discrete device application. The technology is for improving the RF performance of conventional two-port single-gate HEMT device, with slightly noise figure degradation. This innovation doesn't require complicated RF testing and modeling as compared with conventional dual-gate devices. The two-port dual-gate device fits packaging molds of conventional two-port discrete device, hence the production line thereof can be easily extended to low noise amplifier and power amplifier applications.
摘要翻译： 一种用于放大器应用的双端口双栅场效应晶体管，其中包括多个无源元件（例如电阻器，二极管和电容器）的自偏置电路用于将放大器的输出与第二栅极 双栅极器件作为偏置源，其将传统的三端口共源共栅拓扑转换为双端口双栅极器件，以便于分立器件应用的器件测试，建模和封装。 该技术用于提高传统双端口单栅极HEMT器件的RF性能，具有轻微的噪声系数下降。 与传统的双栅极器件相比，该创新不需要复杂的RF测试和建模。 双端口双栅极器件适用于传统双端口分立器件的封装模具，因此其生产线可以轻松扩展到低噪声放大器和功率放大器应用。
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公开(公告)号：US5294312A
公开(公告)日：1994-03-15
申请号：US54516
申请日：1993-04-28
申请人： Tsung-Shune Chin , Wei-Der Chang , Ming-Cheng Deng
发明人： Tsung-Shune Chin , Wei-Der Chang , Ming-Cheng Deng
CPC分类号： G11B5/653 , C23C14/14 , C23C14/3414 , G11B5/656
摘要： A method for preparing a magnetic recording medium includes the steps of providing a substrate, providing an alloy composite target attaching thereon Co and Fe pellets to modify the composition of this magnetic recording medium, and utilizing the target to form a (Co,Mn) modified .gamma.-Fe.sub.2 O.sub.3 thin film on the substrate under controlled conditions. Such method can provide a magnetic recording medium which is cost-effective and has a better SNR, a better resistance to corrosion and a high coercivity.
摘要翻译： 制备磁记录介质的方法包括提供基板，提供附着有Co和Fe颗粒的合金复合靶，以改变该磁记录介质的组成，并利用该靶形成（Co，Mn）改性的 （γ）-Fe 2 O 3薄膜在受控条件下。 这种方法可以提供成本有效且具有更好的SNR，更好的耐腐蚀性和高矫顽力的磁记录介质。
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公开(公告)号：US5384158A
公开(公告)日：1995-01-24
申请号：US217370
申请日：1994-03-24
申请人： Tsung-Shune Chin , Wei-Der Chang , Ming-Cheng Deng
发明人： Tsung-Shune Chin , Wei-Der Chang , Ming-Cheng Deng
摘要： A method for preparing a magnetic recording medium includes the following steps of providing a substrate; providing a solution consisting essentially of ions of cobalt, manganese and iron in deionized water; and preheating the substrate and spraying the solution onto the preheated substrate at an elevated temperature to uniformly distribute droplets thereon and form a magnetic recording medium film on the subtrate. Such method can prepare a magnetic thin film which has a high recording density and is cost-effective.
摘要翻译： 制备磁记录介质的方法包括以下步骤：提供衬底; 提供基本上由去离子水中的钴，锰和铁离子组成的溶液; 并预热基板并在升高的温度下将溶液喷射到预热的基板上，以在其上均匀地分布液滴，并在缓冲液上形成磁记录介质膜。 这种方法可以制备具有高记录密度并具有成本效益的磁性薄膜。
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