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公开(公告)号：US08536674B2
公开(公告)日：2013-09-17
申请号：US12973097
申请日：2010-12-20
CPC分类号： H01L21/76224 , H01L21/761 , H01L21/8213 , H01L21/823481 , H01L21/823493 , H01L21/8252
摘要： A method includes providing a substrate with at least one semiconducting layer. The method also includes forming a plurality of isolation barriers within the at least one semiconducting layer, thereby forming a plurality of device islands. The method further includes inserting a plurality of electronic devices into a portion of the at least one semiconducting layer such that each electronic device is substantially isolated from each other electronic device by the device islands.
摘要翻译： 一种方法包括提供具有至少一个半导体层的衬底。 该方法还包括在至少一个半导体层内形成多个隔离屏障，从而形成多个器件岛。 该方法还包括将多个电子器件插入到至少一个半导体层的一部分中，使得每个电子器件通过器件岛基本上与彼此电子器件隔离。
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公开(公告)号：US20120153427A1
公开(公告)日：2012-06-21
申请号：US12973097
申请日：2010-12-20
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76224 , H01L21/761 , H01L21/8213 , H01L21/823481 , H01L21/823493 , H01L21/8252
摘要： A method includes providing a substrate with at least one semiconducting layer. The method also includes forming a plurality of isolation barriers within the at least one semiconducting layer, thereby forming a plurality of device islands. The method further includes inserting a plurality of electronic devices into a portion of the at least one semiconducting layer such that each electronic device is substantially isolated from each other electronic device by the device islands.
摘要翻译： 一种方法包括提供具有至少一个半导体层的衬底。 该方法还包括在至少一个半导体层内形成多个隔离屏障，从而形成多个器件岛。 该方法还包括将多个电子器件插入到至少一个半导体层的一部分中，使得每个电子器件通过器件岛基本上与彼此电子器件隔离。
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3.发明申请SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHODS FOR THEIR MANUFACTURE 审中-公开SiC基板，基于其的半导体器件及其制造方法公开(公告)号：US20100123140A1
公开(公告)日：2010-05-20
申请号：US12275067
申请日：2008-11-20
申请人： Victor Lienkong Lou , Kevin Sean Matocha , Aveek Chatterjee , Vinayak Tilak , Stephen Arthur , Zachary Stum
发明人： Victor Lienkong Lou , Kevin Sean Matocha , Aveek Chatterjee , Vinayak Tilak , Stephen Arthur , Zachary Stum
CPC分类号： H01L21/049
摘要： The present invention generally relates to a method for improving inversion layer mobility and providing low defect density in a semiconductor device based upon a silicon carbide (SiC) substrate. More specifically, the present invention provides a method for the manufacture of a semiconductor device based upon a silicon carbide substrate and comprising an oxide layer comprising incorporating at least one additive into the atomic structure of the oxide layer. Semiconductor devices, such as MOSFETS, based upon a substrate treated according to the present method are expected to have inversion layer mobilities of at least about 60 cm2/Vs.
摘要翻译： 本发明一般涉及一种在基于碳化硅（SiC）衬底的半导体器件中提高反层迁移率和提供低缺陷密度的方法。 更具体地说，本发明提供一种制造基于碳化硅衬底的半导体器件的方法，该方法包括将至少一种添加剂结合到氧化物层的原子结构中的氧化物层。 预期基于根据本方法处理的衬底的诸如MOSFET的半导体器件具有至少约60cm 2 / Vs的反转层迁移率。
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公开(公告)号：US20130026559A1
公开(公告)日：2013-01-31
申请号：US13190723
申请日：2011-07-26
申请人： Stephen Daley Arthur , Kevin Matocha , Peter Sandvik , Zachary Stum , Peter Losee , James McMahon
发明人： Stephen Daley Arthur , Kevin Matocha , Peter Sandvik , Zachary Stum , Peter Losee , James McMahon
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L27/088 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.
摘要翻译： 在一个实施例中，本发明包括一个包含单个MOSFET单元的MOSFET。 每个单元包括形成在孔内的U形孔（228）（P型）和两个平行源（260）（N型）。 多个源极（262）（掺杂N）在多个位置连接源极（260）。 两个梯级（262）之间的区域包括主体（252）（P型）。 这些特征形成在形成在N型衬底（216）上的N型外延层（220）上。 接触件（290）跨越并接触多个源极（262）和主体（252）。 栅极氧化物和栅极接触覆盖第一阱的支腿和第二相邻阱的支路，响应于栅极电压而反转导电性。 MOSFET包括多个这些单元以获得期望的低通道电阻。 在制造过程的几个状态下使用自对准技术形成单元区域。
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公开(公告)号：US08377756B1
公开(公告)日：2013-02-19
申请号：US13190723
申请日：2011-07-26
申请人： Stephen Daley Arthur , Kevin Matocha , Peter Sandvik , Zachary Stum , Peter Losee , James McMahon
发明人： Stephen Daley Arthur , Kevin Matocha , Peter Sandvik , Zachary Stum , Peter Losee , James McMahon
CPC分类号： H01L27/088 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.
摘要翻译： 在一个实施例中，本发明包括一个包含单个MOSFET单元的MOSFET。 每个单元包括形成在孔内的U形孔（228）（P型）和两个平行源（260）（N型）。 多个源极（262）（掺杂N）在多个位置连接源极（260）。 两个梯级（262）之间的区域包括主体（252）（P型）。 这些特征形成在形成在N型衬底（216）上的N型外延层（220）上。 接触件（290）跨越并接触多个源极（262）和主体（252）。 栅极氧化物和栅极接触覆盖第一阱的支腿和第二相邻阱的支路，响应于栅极电压而反转导电性。 MOSFET包括多个这些单元以获得期望的低通道电阻。 在制造过程的几个状态下使用自对准技术形成单元区域。
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公开(公告)号：US20080165929A1
公开(公告)日：2008-07-10
申请号：US11892812
申请日：2007-08-27
申请人： Robert E. Thorne , Zachary Stum , Kevin O'Neill , Jan Kmetko
发明人： Robert E. Thorne , Zachary Stum , Kevin O'Neill , Jan Kmetko
IPC分类号： G01N23/20
CPC分类号： C30B29/58 , C30B35/00 , G01N23/20 , G01N23/20025 , Y10S269/90 , Y10S269/908 , Y10S269/909 , Y10T29/53961 , Y10T117/1036
摘要： Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.
摘要翻译： 用于安装用于X射线晶体学的生物大分子的微晶的样品安装件（10）通过使用具有赋予曲率的图案化的聚酰亚胺薄膜（12）来制备，例如通过附接到小金属棒的弯曲外表面 16）。 图案化膜（12）优选地包括用于保持晶体的尖端（24）。 优选地，在膜中设置小的样品孔以接收晶体。 还可以提供第二个更大的孔，其通过排水通道连接到样品孔，允许去除多余的液体并且更容易在粘性溶液中操作。 赋予膜（12）的曲率提高了膜的刚性，并且允许用于取出晶体的方便的勺状作用。 聚酰亚胺对背景和吸收的贡献最小，可以进行处理以获得所需的疏水性或亲水性。
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公开(公告)号：US07542546B2
公开(公告)日：2009-06-02
申请号：US11892812
申请日：2007-08-27
申请人： Robert E. Thorne , Zachary Stum , Kevin O'Neill , Jan Kmetko
发明人： Robert E. Thorne , Zachary Stum , Kevin O'Neill , Jan Kmetko
CPC分类号： C30B29/58 , C30B35/00 , G01N23/20 , G01N23/20025 , Y10S269/90 , Y10S269/908 , Y10S269/909 , Y10T29/53961 , Y10T117/1036
摘要： Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.
摘要翻译： 用于安装用于X射线晶体学的生物大分子的微晶的样品安装件（10）通过使用具有赋予曲率的图案化的聚酰亚胺薄膜（12）来制备，例如通过附接到小金属棒的弯曲外表面 16）。 图案化膜（12）优选地包括用于保持晶体的尖端（24）。 优选地，在膜中设置小的样品孔以接收晶体。 还可以提供第二个较大的孔，其通过排水通道连接到样品孔，允许去除多余的液体并且更容易在粘性溶液中操作。 赋予膜（12）的曲率提高了膜的刚性，并且允许用于取出晶体的方便的勺状作用。 聚酰亚胺对背景和吸收的贡献最小，可以进行处理以获得所需的疏水性或亲水性。
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公开(公告)号：US07263162B2
公开(公告)日：2007-08-28
申请号：US11228455
申请日：2005-09-19
申请人： Robert E. Thorne , Zachary Stum , Kevin O'Neill , Jan Kmetko
发明人： Robert E. Thorne , Zachary Stum , Kevin O'Neill , Jan Kmetko
CPC分类号： C30B29/58 , C30B35/00 , G01N23/20 , G01N23/20025 , Y10S269/90 , Y10S269/908 , Y10S269/909 , Y10T29/53961 , Y10T117/1036
摘要： Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tapered tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.
摘要翻译： 用于安装用于X射线晶体学的生物大分子的微晶的样品安装件（10）通过使用具有赋予曲率的图案化的聚酰亚胺薄膜（12）来制备，例如通过附接到小金属棒的弯曲外表面 16）。 图案化膜（12）优选地包括用于保持晶体的锥形尖端（24）。 优选地，在膜中设置小的样品孔以接收晶体。 还可以提供第二个更大的孔，其通过排水通道连接到样品孔，允许去除多余的液体并且更容易在粘性溶液中操作。 赋予膜（12）的曲率提高了膜的刚性，并且允许用于取出晶体的方便的勺状作用。 聚酰亚胺对背景和吸收的贡献最小，可以进行处理以获得所需的疏水性或亲水性。
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公开(公告)号：US20060086315A1
公开(公告)日：2006-04-27
申请号：US11228455
申请日：2005-09-19
申请人： Robert Thorne , Zachary Stum , Kevin O'Neill , Jan Kmetko
发明人： Robert Thorne , Zachary Stum , Kevin O'Neill , Jan Kmetko
CPC分类号： C30B29/58 , C30B35/00 , G01N23/20 , G01N23/20025 , Y10S269/90 , Y10S269/908 , Y10S269/909 , Y10T29/53961 , Y10T117/1036
摘要： Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tapered tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.
摘要翻译： 用于安装用于X射线晶体学的生物大分子的微晶的样品安装件（10）通过使用具有赋予曲率的图案化的聚酰亚胺薄膜（12）来制备，例如通过附接到小金属棒的弯曲外表面 16）。 图案化膜（12）优选地包括用于保持晶体的锥形尖端（24）。 优选地，在膜中设置小的样品孔以接收晶体。 还可以提供第二个更大的孔，其通过排水通道连接到样品孔，允许去除多余的液体并且更容易在粘性溶液中操作。 赋予膜（12）的曲率提高了膜的刚性，并且允许用于取出晶体的方便的勺状作用。 聚酰亚胺对背景和吸收的贡献最小，可以进行处理以获得所需的疏水性或亲水性。
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