Optical position assessment apparatus and method
    1.
    发明申请
    Optical position assessment apparatus and method 有权
    光学位置评估装置及方法

    公开(公告)号:US20050275840A1

    公开(公告)日:2005-12-15

    申请号:US10854770

    申请日:2004-05-27

    CPC分类号: G03F7/70275 G03F9/7088

    摘要: An optical position assessment apparatus and method has an illumination system that supplies an alignment beam of radiation, and positional data is derived from reflections of the alignment beam. A substrate is supported on a substrate table and a projection system is used to project the alignment beam onto a target portion of the substrate. A positioning system causes relative movement between the substrate and the projection system. An array of lenses is arranged such that each lens in the array focuses a respective portion of the alignment beam onto a respective part of the target portion. An array of detectors is arranged such that each detector in the array detects light reflected from the substrate through a respective lens in the array and provides an output representative of the intensity of light reflected to it from the substrate through the respective lens. A processor is connected to the outputs of the detectors for deriving data representing the position of the lens array relative to the substrate from the outputs of the detectors.

    摘要翻译: 光学位置评估装置和方法具有照射系统,其提供对准的辐射束,并且位置数据源自对准光束的反射。 基板被支撑在基板台上,并且使用投影系统将对准光束投影到基板的目标部分上。 定位系统引起基板和投影系统之间的相对移动。 透镜阵列被布置成使得阵列中的每个透镜将对准光束的相应部分聚焦到目标部分的相应部分上。 一组检测器被布置成使得阵列中的每个检测器通过阵列中的相应透镜来检测从基板反射的光,并且通过相应的透镜提供代表从基板反射的光的强度的输出。 处理器连接到检测器的输出,用于从检测器的输出导出表示透镜阵列相对于基板的位置的数据。

    Lithographic apparatus and device manufacturing method
    3.
    发明申请
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号:US20050213067A1

    公开(公告)日:2005-09-29

    申请号:US10811070

    申请日:2004-03-29

    IPC分类号: G03F7/20 H01L21/027 G03B27/54

    CPC分类号: G03F7/70875 G03F7/705

    摘要: A lithographic apparatus and method in which a patterning system is used to impart to a projection beam a pattern in its cross-section. The beam is directed by a projection system from an illumination system onto a target portion of the surface of a substrate supported on a substrate support. The target portion has predetermined spatial characteristics relative to the substrate table that are appropriate for a desired exposure pattern on the surface of the substrate. The temperature of the substrate is measured, and the dimensional response of the substrate to the measured temperature is calculated. The spatial characteristics of the target portion relative to the substrate table are adjusted to compensate for the calculated dimensional response.

    摘要翻译: 一种光刻设备和方法,其中使用图案化系统以在其横截面中将投影光束赋予图案。 光束由投影系统从照明系统引导到支撑在基板支撑件上的基板的表面的目标部分上。 目标部分相对于衬底台具有适合于衬底表面上的期望曝光图案的预定空间特性。 测量衬底的温度,并计算衬底对测量温度的尺寸响应。 调整目标部分相对于衬底台的空间特性以补偿所计算的尺寸响应。

    Lithographic apparatus and device manufacturing method

    公开(公告)号:US20060035160A1

    公开(公告)日:2006-02-16

    申请号:US10914633

    申请日:2004-08-10

    IPC分类号: G03C5/00 G03B27/42

    CPC分类号: G03F7/70791 G03F7/70275

    摘要: A system and method use a lithographic apparatus to direct a plurality of patterned beams onto a substrate supported on a substrate table. The patterned beams are projected onto target portions of the substrate and relative displacement between the substrate and the patterned beams causes the beams to be scanned across the substrate. A first projection device projects a first relatively large area patterned beam which extends across a substantial proportion of the substrate. At least one second relatively small area patterned beam is selectively positioned relative to the first projection device at least in a direction transverse to the predetermined direction. The second beam may be used to expose an elongate portion of the substrate which extends in the direction of relative displacement. At least one third patterned beam of relatively small area may be provided which is selectively displaceable relative to the substrate table during relative displacement between the substrate and the first beam. The third patterned beam may be used to expose an elongate portion of the substrate which extends transversely to the direction of relative displacement.