公开(公告)号：US20130285009A1

公开(公告)日：2013-10-31

申请号：US13978797

申请日：2012-01-10

申请人： Cheol Jin Lee ,  Dong Hoon Shin

发明人： Cheol Jin Lee ,  Dong Hoon Shin

IPC分类号： H01J1/316

CPC分类号： H01J1/316 ,  B82Y20/00 ,  H01J2201/30446 ,  H01J2201/30469

摘要： Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials.

摘要翻译： 描述了相对于衬底平行地发射电子的横向场发射器件。 具有预定厚度的电子发射材料在支撑部分上相对于衬底的方向布置。 阳极设置在基板的侧部，阳极对应于电子发射材料。

公开(公告)号：US20100316792A1

公开(公告)日：2010-12-16

申请号：US12685767

申请日：2010-01-12

申请人： Cheol Jin Lee ,  Seung Il Jung ,  Dong Hoon Shin

发明人： Cheol Jin Lee ,  Seung Il Jung ,  Dong Hoon Shin

IPC分类号： B05D5/12

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J29/04 ,  H01J31/127

摘要： A method of fabricating an electron emission source and a method of fabricating an electronic device by using the method. An electron emission material layer of the electron emission source is formed by filtration and transfer, and a mask including windows (openings) having predetermined patterns is used in a transfer process so that an electron emission layer having a desired shape may be freely obtained.

摘要翻译： 一种制造电子发射源的方法和使用该方法制造电子器件的方法。 通过过滤和转移形成电子发射源的电子发射材料层，并且在转移过程中使用包括具有预定图案的窗口（开口）的掩模，从而可以自由地获得具有所需形状的电子发射层。

公开(公告)号：US09099274B2

公开(公告)日：2015-08-04

申请号：US13978797

申请日：2012-01-10

申请人： Cheol Jin Lee ,  Dong Hoon Shin

发明人： Cheol Jin Lee ,  Dong Hoon Shin

IPC分类号： H01L29/06 ,  H01L29/43 ,  H01J1/316 ,  B82Y20/00

CPC分类号： H01J1/316 ,  B82Y20/00 ,  H01J2201/30446 ,  H01J2201/30469

摘要： Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials.

摘要翻译： 描述了相对于衬底平行地发射电子的横向场发射器件。 具有预定厚度的电子发射材料在支撑部分上相对于衬底的方向布置。 阳极设置在基板的侧部，阳极对应于电子发射材料。

公开(公告)号：US07932138B2

公开(公告)日：2011-04-26

申请号：US12341488

申请日：2008-12-22

申请人： Hyoung June Kim ,  Dong Hoon Shin ,  Su Kyoung Lee ,  Jung Min Lee ,  Wang Jun Park ,  Sung Ryoung Ryu ,  Hoon Kim

发明人： Hyoung June Kim ,  Dong Hoon Shin ,  Su Kyoung Lee ,  Jung Min Lee ,  Wang Jun Park ,  Sung Ryoung Ryu ,  Hoon Kim

IPC分类号： H01L21/00

CPC分类号： H01L29/4908 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.

摘要翻译： 一种具有改善的电流特性和高电子迁移率的薄膜晶体管的制造方法。 根据该方法，当非晶硅薄膜通过金属诱导结晶结晶化为多晶硅薄膜时，非晶硅薄膜的退火条件和掺杂到非晶硅薄膜中的金属催化剂的量被优化为 减少分布在多晶硅薄膜的晶界处的金属硅化物的区域。 此外，供应氧（O 2）气体或水（H 2 O）蒸气以在多晶硅薄膜的表面上形成钝化膜。

公开(公告)号：US06747254B2

公开(公告)日：2004-06-08

申请号：US10146504

申请日：2002-05-14

申请人： Hyoung June Kim ,  Dong Hoon Shin

发明人： Hyoung June Kim ,  Dong Hoon Shin

IPC分类号： H05B610

CPC分类号： H05B6/105 ,  H01L21/67109

摘要： The present invention relates to apparatuses for continuous and efficient heat-treatment of semiconductor films upon thermally susceptible non-conducting substrates at a minimum thermal budget, and more particularly, to a polycrystalline silicon thin-film transistors (poly-Si TFTs) and PN diodes on glass substrates for various applications of liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and solar cells. According to the apparatuses of the present invention, the semiconductor films can be heat-treated without damaging the thermally susceptible substrates: e.g., crystallization of amorphous silicon films at the minimum thermal budget acceptable for the use of glass, enhancing kinetics of dopant activation at the minimum thermal budget acceptable for the use of glass.

摘要翻译： 本发明涉及用于在热敏非导电衬底上以最小热预算连续且有效地对半导体膜进行热处理的装置，更具体地说，涉及多晶硅薄膜晶体管（多晶硅TFT）和PN二极管 在用于液晶显示器（LCD），有机发光二极管（OLED）和太阳能电池的各种应用的玻璃基板上。 根据本发明的装置，可以对半导体膜进行热处理，而不损害热敏基片：例如，在玻璃的使用可接受的最小热预算下，非晶硅薄膜的结晶化，增强在玻璃的掺杂剂激活的动力学 玻璃使用的最低热预算可接受。

公开(公告)号：US20160200160A1

公开(公告)日：2016-07-14

申请号：US14595496

申请日：2015-01-13

申请人： Kyoung Su YI ,  Dong Hoon Shin

发明人： Kyoung Su YI ,  Dong Hoon Shin

IPC分类号： B60G17/016 ,  B60G17/019 ,  B60G17/06

CPC分类号： B60G17/0162 ,  B60G13/14 ,  B60G17/0157 ,  B60G17/0164 ,  B60G17/018 ,  B60G17/019 ,  B60G17/06 ,  B60G2202/42 ,  B60G2202/44 ,  B60G2204/418 ,  B60G2204/419 ,  B60G2300/60 ,  B60G2400/0511 ,  B60G2400/0523 ,  B60G2400/102 ,  B60G2400/104 ,  B60G2400/41 ,  B60G2500/10

摘要： An active damping system has an electrically controlled actuator including: a steering wheel angle sensor; a yaw rate sensor; a lateral acceleration sensor; a vertical acceleration sensor; a roll angle sensor; a control mode determining unit configured to receive the signals detected by the sensors, thereby determining a control mode; a control signal generating unit configured to generate a control signal depending upon the control mode determined by the control mode determining unit; an electric motor which is operated according to the control signal of the control signal generating unit; and a ball screw which is rotated in cooperation with a rotation shaft of the electric motor at one side, and is meshed with an axle of the vehicle at the other side to vary a distance between the vehicle body and the axle according to the rotation of the electric motor.

摘要翻译： 主动阻尼系统具有电控致动器，包括：方向盘角度传感器; 偏航率传感器; 横向加速度传感器; 垂直加速度传感器; 滚动角传感器; 控制模式确定单元，被配置为接收由所述传感器检测到的信号，从而确定控制模式; 控制信号生成单元，被配置为根据由控制模式确定单元确定的控制模式来生成控制信号; 根据控制信号生成部的控制信号进行动作的电动马达; 以及滚珠丝杠，其与一侧的电动机的旋转轴协作旋转，并且与另一侧的车辆的车轴相啮合，以根据车身与车轴之间的距离而变化 电动机。

公开(公告)号：US20090301530A1

公开(公告)日：2009-12-10

申请号：US12089632

申请日：2006-10-10

申请人： Dong Hoon Shin ,  Mi Son Ahn ,  Ji Ho Kim ,  Chang Woo Song ,  Kyung Ah Cho

发明人： Dong Hoon Shin ,  Mi Son Ahn ,  Ji Ho Kim ,  Chang Woo Song ,  Kyung Ah Cho

IPC分类号： A47L15/42

CPC分类号： A47L15/4242

摘要： The present invention relates to dishwashing machines, and more particularly, to a dish washer (1a) having a UV generator (110) for sterilizing dishes and an inside of dish washer (1 a), including a tub (2) for holding dishes to be washed, a sump (3) for holding washing water, a spray nozzle (8a, 8b) for spraying the washing water into the dish washer (1a), and at least one UV generator (110) for directing a UV beam into the dish washer (1 a).

摘要翻译： 本发明涉及洗碗机，更具体地说，涉及一种具有用于对餐具进行灭菌的UV发生器（110）和洗碗机（1a）内部的洗碗机（1a），所述洗碗机包括用于容纳碗碟的桶（2） 洗涤，用于保持洗涤水的贮槽（3），用于将洗涤水喷射到洗碗机（1a）中的喷嘴（8a，8b）和至少一个UV发生器（110），用于将UV束引导到 洗碗机（1 a）。

公开(公告)号：US08181659B2

公开(公告)日：2012-05-22

申请号：US12089632

申请日：2006-10-10

申请人： Dong Hoon Shin ,  Mi Son Ahn ,  Ji Ho Kim ,  Chang Woo Song ,  Kyung Ah Cho

发明人： Dong Hoon Shin ,  Mi Son Ahn ,  Ji Ho Kim ,  Chang Woo Song ,  Kyung Ah Cho

IPC分类号： B08B3/00

CPC分类号： A47L15/4242

摘要： A dishwasher having a UV generator that sterilizes dishes is provided. The dishwasher includes a tub that holds dishes to be washed, a sump that holds washing water, a spray nozzle that sprays the washing water into the dishwasher, and at least one UV generator that directs a UV beam into the dishwasher.

摘要翻译： 提供了一种具有紫外线发生器的洗碗机，其对餐具进行灭菌。 洗碗机包括一个保持待洗碗的桶，一个保持洗涤水的贮槽，将洗涤水喷入洗碗机中的喷嘴，以及至少一个紫外线发生器，将紫外光束引导到洗碗机中。

公开(公告)号：US07989736B2

公开(公告)日：2011-08-02

申请号：US11598447

申请日：2006-11-13

申请人： Wang Jun Park ,  Jung Bae Kim ,  Young Jae Ahn ,  Hyoung June Kim ,  Dong Hoon Shin

发明人： Wang Jun Park ,  Jung Bae Kim ,  Young Jae Ahn ,  Hyoung June Kim ,  Dong Hoon Shin

IPC分类号： H01L21/02 ,  F27B9/12 ,  F27B9/36 ,  F27B9/39

CPC分类号： H01L21/67109 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67236

摘要： Disclosed is a heat treatment system for semiconductor devices. The heat treatment system is used in a heat treatment process for semiconductor devices, such as a crystallization process for an amorphous silicon thin film or a dopant activation process for a poly-crystalline silicon thin film formed on a surface of a glass substrate of a flat display panel including a liquid crystal display (LCD) or an organic light emitting device (OLED). The heat treatment system transfers a semiconductor device after uniformly preheating the semiconductor device in order to prevent deformation of the semiconductor device during the heat treatment process, rapidly performs the heat treatment process under the high temperature condition by heating the semiconductor device using a lamp heater and induction heat derived from induced electromotive force, and unloads the semiconductor device after uniformly cooling the semiconductor device such that the semiconductor device is prevented from being deformed when the heat treatment process has been finished. The heat treatment system rapidly performs the heat treatment process while preventing deformation of the semiconductor device by gradually heating or cooling the semiconductor device.

摘要翻译： 公开了一种用于半导体器件的热处理系统。 热处理系统用于半导体器件的热处理工艺，例如非晶硅薄膜的结晶工艺或形成在平坦的玻璃基板的表面上的多晶硅薄膜的掺杂剂活化工艺 显示面板包括液晶显示器（LCD）或有机发光器件（OLED）。 热处理系统在对半导体器件进行均匀预热之后传递半导体器件，以防止在热处理过程中半导体器件的变形，通过使用灯加热器加热半导体器件，在高温条件下快速地执行热处理工艺，以及 由感应电动势产生的感应热，并且在均匀冷却半导体器件之后卸载半导体器件，使得当热处理过程结束时，防止半导体器件变形。 热处理系统通过逐渐加热或冷却半导体器件来快速地执行热处理过程，同时防止半导体器件的变形。

公开(公告)号：US20090170248A1

公开(公告)日：2009-07-02

申请号：US12341488

申请日：2008-12-22

申请人： Hyoung June Kim ,  Dong Hoon Shin ,  Su Kyoung Lee ,  Jung Min Lee ,  Wang Jun Park ,  Sung Ryoung Ryu ,  Hoon Kim

发明人： Hyoung June Kim ,  Dong Hoon Shin ,  Su Kyoung Lee ,  Jung Min Lee ,  Wang Jun Park ,  Sung Ryoung Ryu ,  Hoon Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/4908 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.

摘要翻译： 一种具有改善的电流特性和高电子迁移率的薄膜晶体管的制造方法。 根据该方法，当非晶硅薄膜通过金属诱导结晶结晶化为多晶硅薄膜时，非晶硅薄膜的退火条件和掺杂到非晶硅薄膜中的金属催化剂的量被优化为 减少分布在多晶硅薄膜的晶界处的金属硅化物的区域。 此外，供应氧（O 2）气体或水（H 2 O）蒸气以在多晶硅薄膜的表面上形成钝化膜。