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7 条记录 (耗时 0.017 秒)

    Short yoke length planar writer with low DC coil resistance
    2.
    发明申请
    Short yoke length planar writer with low DC coil resistance 有权
    具有低直流线圈电阻的短轭长度平面刻录机

    公开(公告)号：US20050024769A1

    公开(公告)日：2005-02-03

    申请号：US10633105

    申请日：2003-08-01

    申请人： Cherng Han ,  Mao-Min Chen

    发明人： Cherng Han ,  Mao-Min Chen

    IPC分类号： G11B5/147 ,  G11B5/31 ,  G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/3106 ,  Y10T29/49032

    摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention a layer of alumina is deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a two coil planar magnetic write head is described.

    摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，一层氧化铝沉积在多余的光致抗蚀剂的表面上，随后开始CMP。 氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。 一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。 描述了该方法在制造双线圈平面磁性写入头上的应用。

    Seed/AFM combination for CCP GMR device
    5.
    发明申请
    Seed/AFM combination for CCP GMR device 有权
    CCP GMR设备的种子/ AFM组合

    公开(公告)号：US20080112089A1

    公开(公告)日：2008-05-15

    申请号：US12008151

    申请日：2008-01-09

    申请人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

    发明人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

    IPC分类号： G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

    摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.

    摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 还描述了用于制造器件的工艺。