公开(公告)号：US06345435B1

公开(公告)日：2002-02-12

申请号：US09443448

申请日：1999-11-22

申请人： Cherng-Chyi Han ,  Chyu-Jiuh Torng ,  Rodney Lee ,  Kochan Ju

发明人： Cherng-Chyi Han ,  Chyu-Jiuh Torng ,  Rodney Lee ,  Kochan Ju

IPC分类号： G11B542

CPC分类号： G11B5/59683 ,  G11B5/4813 ,  G11B5/5521 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method and design for the fabrication of a laminated yoke for a high data rate magnetic read-write transducer head. A full film layer of first ferromagnetic material is formed on a base using either plating or sputtering. The base comprises a read head, a ferromagnetic pole piece, and a ferromagnetic shield which also serves as a pole piece. A patterned layer of first non-magnetic dielectric is then formed on the full film layer of first ferromagnetic material. A patterned layer of photoresist is then formed on the full film layer of first ferromagnetic material and the patterned non-magnetic dielectric and used as a frame for a frame plating deposition of a patterned layer of second ferromagnetic material. The full film layer of first ferromagnetic material and the non-magnetic dielectric are then patterned, using the patterned layer of second ferromagnetic material as a mask and ion beam etching.

摘要翻译： 一种用于制造用于高数据速率磁读写传感器头的层叠磁轭的方法和设计。 使用电镀或溅射在基底上形成第一铁磁材料的完整膜层。 基座包括读头，铁磁极片和铁磁屏蔽，其也用作极片。 然后在第一铁磁材料的全部薄膜层上形成第一非磁性电介质的图案层。 然后在第一铁磁材料和图案化非磁性电介质的完整膜层上形成图案化的光致抗蚀剂层，并用作用于第二铁磁材料的图案化层的框架电镀沉积的框架。 然后使用第二铁磁材料的图案化层作为掩模和离子束蚀刻来对第一铁磁材料和非磁性介电体的全部膜层进行构图。

公开(公告)号：US6103136A

公开(公告)日：2000-08-15

申请号：US46007

申请日：1998-03-23

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju

IPC分类号： G01R33/09 ,  G11B5/39 ,  B44C1/22

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

公开(公告)号：US06373667B1

公开(公告)日：2002-04-16

申请号：US09637208

申请日：2000-08-14

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

摘要翻译： 一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。 首先提供基板。 在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。 还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。 软相邻层（SAL）的第一表面接触电介质层的第二表面。 最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个 ，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。 本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。 类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

公开(公告)号：US06322640B1

公开(公告)日：2001-11-27

申请号：US09489969

申请日：2000-01-24

申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

IPC分类号： H01F4100

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49034

摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.

摘要翻译： 一种用于形成磁偏置磁阻（MR）层的方法。 首先提供基板。 然后在衬底上形成铁磁磁阻（MR）材料层。 然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相 铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。 然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。 最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。 该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。

公开(公告)号：US06447689B1

公开(公告)日：2002-09-10

申请号：US09584424

申请日：2000-06-05

申请人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

发明人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F41/308

摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer is in place at the time that photoresist (used to define the location of the spin valve relative to the buried leads and longitudinal bias layers) is removed. The protective layer is later removed as a natural byproduct of surface cleanup just prior to the formation of the spin valve itself.

摘要翻译： 公开了一种制造具有埋地引线的自旋阀结构的改进方法。 一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。 该保护层在光刻胶（用于限定自旋阀相对于埋入引线和纵向偏置层的位置）被去除时就位。 在形成自旋阀本身之前，保护层随后被除去，作为表面清洁的天然副产物。

公开(公告)号：US06428714B1

公开(公告)日：2002-08-06

申请号：US09584426

申请日：2000-06-05

申请人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

发明人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F41/308

摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer remains in place while the buried leads as well as longitudinal bias means are formed. Processing includes use of photoresist liftoff. The protective layer is removed as a natural byproduct of surface cleanup just prior the formation of the spin valve.

摘要翻译： 公开了一种制造具有埋地引线的自旋阀结构的改进方法。 一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。 该保护层保持原位，同时形成埋入引线以及纵向偏置装置。 处理包括使用光致抗蚀剂剥离。 在形成自旋阀之前，保护层作为表面清洁的天然副产物被去除。

公开(公告)号：US06291087B1

公开(公告)日：2001-09-18

申请号：US09336786

申请日：1999-06-21

申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Kochan Ju ,  Cheng Horng ,  Jei-Wei Chang

发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Kochan Ju ,  Cheng Horng ,  Jei-Wei Chang

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3954 ,  G11B5/66 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T428/1121

摘要： A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method. The method is particularly useful for forming a dual stripe magnetoresistive (DSMR) sensor element by employing a single magnetic exchange bias material with separate blocking temperatures.

摘要翻译： 一种用于形成磁阻（MR）传感器元件的方法和根据该方法制造的磁阻传感器元件。 首先提供基板。 然后在衬底上形成磁阻（MR）层，包括：（1）由第一磁阻（MR）材料形成的磁阻（MR）层的体层，其被优化以提供增强的磁阻（MR）电阻率敏感性 磁阻（MR）层; 和（2）由第二磁阻（MR）材料形成的磁阻（MR）层的表面层，其优化以在磁阻（MR）层的表面层上形成磁交换偏置层时提供增强的磁交换偏压。 最后，在磁阻（MR）层的表面层上形成磁交换偏置层。 该方法考虑了根据该方法制造的磁阻（MR）传感器元件。 该方法对于通过采用具有单独的阻挡温度的单个磁交换偏压材料形成双重磁阻（DSMR）传感器元件特别有用。

公开(公告)号：US07012789B2

公开(公告)日：2006-03-14

申请号：US10131675

申请日：2002-04-24

申请人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei Wei Chang

发明人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei Wei Chang

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.

摘要翻译： 合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。 在共享极的第一高磁矩极点上形成写间隙层。 上极包括写间隙层上的高磁矩极点层。

公开(公告)号：US06287476B1

公开(公告)日：2001-09-11

申请号：US09332429

申请日：1999-06-14

申请人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

发明人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996

摘要： A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width. The passivation layer is an electrical insulator that prevents sensor current (I) form shunting through overspray layers while allowing heat to dissipate through to the lead layer.

摘要翻译： 使用MR传感器上的电化学过程形成钝化层的方法，使得钝化层限定MR磁道宽度。 通过阳极氧化MR传感器形成钝化层。 钝化层是电绝缘体（防止传感器电流（I）通过过喷）分流）和热导体，以允许MR热量通过过喷器散射离开MR传感器。 该方法包括：在MR传感器上形成钝化层; 使用电化学工艺形成钝化层。 然后我们旋转并在钝化层上印刷剥离光致抗蚀剂结构。 蚀刻钝化层以除去未被剥离结构覆盖的钝化层，从而限定MR传感器的轨道宽度。 然后我们在钝化层和MR传感器上沉积铅层。 去除剥离结构，其中钝化层限定轨道宽度。 钝化层是电绝缘体，其防止传感器电流（I）通过过喷层形成分流，同时允许热量散发到引线层。

公开(公告)号：US6091589A

公开(公告)日：2000-07-18

申请号：US320756

申请日：1999-05-27

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

IPC分类号： G01R33/09 ,  G11B5/39 ,  G01B7/14

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/399 ,  G11B5/3932 ,  Y10T29/49044 ,  Y10T29/49046

摘要： Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.

摘要翻译： 在可以在磁头内使用的软相邻层（SAL）磁阻（MR）传感器元件中，首先采用衬底。 形成在衬底上的是软相邻层（SAL）。 另外，形成在软相邻层（SAL）上的是电介质层。 最后，至少部分地形成在电介质层上的是磁阻（MR）层。 在软相邻层（SAL）磁阻（MR）传感器元件内，软相邻层（SAL）和电介质层是平面的。 此外，在软相邻层（SAL）磁阻（MR）传感器元件内，磁阻（MR）层的上表面和磁阻（MR）层的下界面都是非平面的。