公开(公告)号：US20050285208A1

公开(公告)日：2005-12-29

申请号：US11149975

申请日：2005-06-10

申请人： Chi Ren ,  Hongyu Yu ,  Siu Hung Daniel Chan ,  Ming-Fu Li ,  Dim-Lee Kwong

发明人： Chi Ren ,  Hongyu Yu ,  Siu Hung Daniel Chan ,  Ming-Fu Li ,  Dim-Lee Kwong

IPC分类号： H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/76

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/823842

摘要： A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.

摘要翻译： 一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。

公开(公告)号：US20080224236A1

公开(公告)日：2008-09-18

申请号：US12020815

申请日：2008-01-28

申请人： Chi Ren ,  Hongyu Yu ,  Siu Hung Daniel Chan ,  Ming-Fu Li ,  Dim-Lee Kwong

发明人： Chi Ren ,  Hongyu Yu ,  Siu Hung Daniel Chan ,  Ming-Fu Li ,  Dim-Lee Kwong

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/823842

摘要： A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.

摘要翻译： 一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。

公开(公告)号：US20180147739A1

公开(公告)日：2018-05-31

申请号：US15572743

申请日：2015-07-31

申请人： Chi Ren ,  Xiangrong Ren

发明人： Chi Ren ,  Xiangrong Ren

IPC分类号： B26B21/40 ,  B26B21/44 ,  B26B21/22

CPC分类号： B26B21/4012 ,  B26B21/225 ,  B26B21/4025 ,  B26B21/4043 ,  B26B21/443

摘要： A razor head includes a head frame, a razor blade, an independent trimming unit and a lubricating strip. The head frame has a front frame wall, a rear frame wall and a side frame wall. The razor blade is arranged between the front frame wall and the rear frame wall, and assembled on the side frame wall. The trimming unit is assembled on the side frame wall, with a receiving groove being defined by the trimming unit and the rear frame wall. The lubricating strip is inserted into the receiving groove, and clamped by the trimming unit and the rear frame wall. By this token, the trimming unit not only has trimming function, but also has holding function for fixing the lubricating strip, accordingly, the manufacturing process is simplified, the manufacturing materials and manufacturing cost are reduced.

公开(公告)号：US08890230B2

公开(公告)日：2014-11-18

申请号：US13549510

申请日：2012-07-15

申请人： Cheng-Yuan Hsu ,  Chi Ren ,  Tzeng-Fei Wen

发明人： Cheng-Yuan Hsu ,  Chi Ren ,  Tzeng-Fei Wen

IPC分类号： H01L21/02

CPC分类号： H01L29/66825 ,  H01L21/266 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/7881 ,  H01L29/7882

摘要： A semiconductor device includes two floating gates, a control gate and a first dielectric layer. The floating gates are disposed on a semiconductor substrate. The control gate partially overlaps each of the floating gates, and a part of the control gate is disposed between the two floating gates. Furthermore, the first dielectric layer disposed between the two floating gates and the control gate has a fixed thickness.

摘要翻译： 半导体器件包括两个浮置栅极，控制栅极和第一介电层。 浮置栅极设置在半导体衬底上。 控制栅极部分地重叠每个浮置栅极，并且控制栅极的一部分设置在两个浮置栅极之间。 此外，设置在两个浮动栅极和控制栅极之间的第一介电层具有固定的厚度。