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    Process for making narrow molecular weight distribution polyvinylpyrrolidone K-90 polymers
    1.
    发明授权
    Process for making narrow molecular weight distribution polyvinylpyrrolidone K-90 polymers 失效
    制备窄分子量分布聚乙烯吡咯烷酮K-90聚合物的方法

    公开(公告)号：US5338814A

    公开(公告)日：1994-08-16

    申请号：US51107

    申请日：1993-04-21

    申请人： Chi-San Wu ,  James F. Curry ,  James P. Cullen

    发明人： Chi-San Wu ,  James F. Curry ,  James P. Cullen

    IPC分类号： C08F2/04 ,  C08F26/10

    CPC分类号： C08F26/10

    摘要： A process for making polyvinylpyrrolidone (PVP) K-90 having a polydispersity of less than 6, preferably less than 5, and most preferably, less than 4, which comprises polymerizing vinylpyrrolidone monomer by free radical solution polymerization, in water, in the presence of polyethylene glycol (PEG) having a molecular weight of about 300 as a chain transfer agent. The product is an aqueous solution of 15-25% PVP K-90, preferably 20%, 15-30% PEG, preferably 25%, and 45-70% water, preferably 55%, by weight of the solution.

    摘要翻译： 一种多分散性小于6，优选小于5，最优选小于4的聚乙烯吡咯烷酮（PVP）K-90的方法，其包括通过自由基溶液聚合将乙烯基吡咯烷酮单体在水中，在水中存在下， 分子量约300的聚乙二醇（PEG）作为链转移剂。 该产品是15-25％PVP K-90，优选20％，15-30％PEG，优选25％和45-70％水，优选55％重量的该溶液的水溶液。

    Free radical solution polymerization of vinylpyrrolidone
    2.
    发明授权
    Free radical solution polymerization of vinylpyrrolidone 失效
    乙烯基吡咯烷酮的自由基溶液聚合

    公开(公告)号：US5373074A

    公开(公告)日：1994-12-13

    申请号：US17155

    申请日：1993-02-12

    申请人： Chi-San Wu ,  James F. Curry ,  James P. Cullen

    发明人： Chi-San Wu ,  James F. Curry ,  James P. Cullen

    IPC分类号： C08F4/04 ,  C08F26/10 ,  C08F4/34 ,  C08F126/10

    CPC分类号： C08F26/10

    摘要： A free radical solution process for making PVP polymers having a molecular weight corresponding to a K-value of about 30-150, a narrow molecular weight distribution represented by a polydispersity of about 3 to 6, and a residual VP monomer level of less than 0.1%, which comprises:(a) precharging a reaction mixture of vinylpyrrolidone monomer and water in a solids contents w/w VP/H.sub.2 O of about 5-50%, and a dual free radical initiator system which comprises both low and high decomposition temperature free radical initiators whose 10-hour half-life temperature decomposition constants differ from each other by more than 5.degree. C., the low and high temperature initiators being present, respectively, in an amount of about 0.05-0.5%, and about 0.1-0.5%, by weight of the VP monomer,(b) polymerizing said monomer in said reaction mixture at a temperature near or above the 10-hour decomposition temperature of said low temperature initiator, and(c) after substantially all of the VP monomer has been converted to PVP polymer, continuing the polymerization at the same temperature as in (b), or at a higher temperature near or above the decomposition temperature of the high 10-hour temperature initiator, to complete the polymerization and to reduce the residual VP monomer level to less than 0.1%.

    摘要翻译： 一种自由基溶液法，其制备具有对应于约30-150的K值的分子量的PVP聚合物，由多分散性约3-6组成的窄分子量分布和小于0.1的残留VP单体水平 ％，其包括：（a）将乙烯基吡咯烷酮单体和水的反应混合物以约5-50％的固体含量w / w VP / H 2 O预充电，以及双重自由基引发剂体系，其包含低和高分解温度 其10小时半衰期温度分解常数彼此相差大于5℃的自由基引发剂，低温和高温引发剂分别以约0.05-0.5％和约0.1-0.5的量存在 （b）在所述反应混合物中的温度接近或高于所述低温引发剂的10小时分解温度的温度下聚合所述单体，和（c）在基本上所有的VP单体之后， 转化为PVP聚合物，在与（b）相同的温度下继续聚合，或在高10小时温度引发剂的分解温度附近或更高的温度下进行聚合，完成聚合并减少残留的VP单体 水平低于0.1％。

    Colorless, non-toxic, stabilized aqueous solution of a C.sub.1 -C.sub.5 alkyl vinyl ether and maleic acid copolymer
    4.
    发明授权
    Colorless, non-toxic, stabilized aqueous solution of a C.sub.1 -C.sub.5 alkyl vinyl ether and maleic acid copolymer 失效
    无色，无毒，稳定的C1-C5烷基乙烯基醚和马来酸共聚物的水溶液

    公开(公告)号：US5739183A

    公开(公告)日：1998-04-14

    申请号：US528380

    申请日：1995-09-13

    申请人： Chi-San Wu ,  James Curry ,  James P. Cullen ,  John S. Mc Ewan

    发明人： Chi-San Wu ,  James Curry ,  James P. Cullen ,  John S. Mc Ewan

    IPC分类号： C08F8/12 ,  C08F8/30 ,  C08K5/17 ,  C08K5/16

    CPC分类号： C08K5/175 ,  C08F8/12 ,  C08F2810/50

    摘要： A method of stabilizing an aqueous solution of an acid copolymer of maleic acid and a C.sub.1 -C.sub.5 alkyl vinyl ether against degradation in viscosity or molecular weight upon storage for an extended period of time in aqueous solution at ambient conditions, with a single stabilizing agent, which comprises forming the acid copolymer directly from a slurry of corresponding anhydride in an organic solvent by hydrolysis in water, and adding including ethylenediamine tetraacetic acid (EDTA), or salt thereof, as the single stabilizing agent to the solution either before or after hydrolysis.

    摘要翻译： 一种稳定马来酸和C1-C5烷基乙烯基醚的酸共聚物的水溶液的方法，其在环境条件下用单一稳定剂在水溶液中长时间储存​​时不会降低粘度或分子量， 其包括在有机溶剂中通过在水中水解直接从相应的酸酐的浆料形成酸共聚物，并且在水解之前或之后将包括乙二胺四乙酸（EDTA）或其盐作为单一稳定剂加入溶液中。

    Colorless, non-toxic, stabilized aqueous solution of a C1-C5 alkyl vinyl ether and maleic acid copolymer
    7.
    发明授权
    Colorless, non-toxic, stabilized aqueous solution of a C1-C5 alkyl vinyl ether and maleic acid copolymer 失效
    无色，无毒，稳定的C1-C5烷基乙烯基醚和马来酸共聚物的水溶液

    公开(公告)号：US5621136A

    公开(公告)日：1997-04-15

    申请号：US542579

    申请日：1995-10-13

    申请人： Chi-San Wu ,  James Curry ,  James P. Cullen ,  John S. McEwan

    发明人： Chi-San Wu ,  James Curry ,  James P. Cullen ,  John S. McEwan

    IPC分类号： C08F8/12 ,  C08F8/30 ,  C08K5/17 ,  C07C69/00 ,  C07C69/007 ,  C07C69/01

    CPC分类号： C08K5/175 ,  C08F8/12 ,  C08F2810/50

    摘要： A method of stabilizing an aqueous solution of an acid copolymer of maleic acid and a C.sub.1 -C.sub.5 alkyl vinyl ether against degradation in viscosity or molecular weight upon storage for an extended period of time in aqueous solution at ambient conditions, with a single stabilizing agent, which comprises forming the acid copolymer, preferably directly from a slurry of corresponding anhydride in an organic solvent by hydrolysis in water, and adding superoxide dismutase as the single stabilizing agent to the solution either before or after hydrolysis.

    摘要翻译： 一种稳定马来酸和C1-C5烷基乙烯基醚的酸共聚物的水溶液的方法，其在环境条件下用单一稳定剂在水溶液中长时间储存​​时不会降低粘度或分子量， 其包括通过在水中水解直接从相应的酸酐在有机溶剂中的浆料形成酸共聚物，并且在水解之前或之后将作为单一稳定剂的超氧化物歧化酶加入溶液中。

    Method for forming a polysilicon layer in a polycide process flow
    9.
    发明授权
    Method for forming a polysilicon layer in a polycide process flow 有权
    在多晶硅工艺流程中形成多晶硅层的方法

    公开(公告)号：US06191019B1

    公开(公告)日：2001-02-20

    申请号：US09229231

    申请日：1999-01-12

    申请人： Chih-Cherng Liao ,  Jiunn-Liang Yu ,  Chan-Jen Kuo ,  Chi-San Wu ,  Yun-Chi Jiang

    发明人： Chih-Cherng Liao ,  Jiunn-Liang Yu ,  Chan-Jen Kuo ,  Chi-San Wu ,  Yun-Chi Jiang

    IPC分类号： H01L213205

    CPC分类号： H01L21/28061

    摘要： A method for preventing void formation in a gate of a transistor formed in a substrate is disclosed. The method comprises: forming a gate oxide layer on the substrate; forming a polysilicon layer on the gate oxide layer; performing an ion implantation on the polysilicon layer, the ion implantation performed with a power approximately 30 KeV and a dosage about more than 1015 atoms/cm2; and forming a silicide layer on the polysilicon layer.

    摘要翻译： 公开了一种用于防止形成在衬底中的晶体管的栅极中形成空穴的方法。 该方法包括：在衬底上形成栅氧化层; 在栅氧化层上形成多晶硅层; 在多晶硅层上进行离子注入，以大约30keV的功率和大于1015个原子/ cm2的剂量进行离子注入; 以及在所述多晶硅层上形成硅化物层。

    Method for forming a semiconductor device
    10.
    发明授权
    Method for forming a semiconductor device 有权
    半导体器件形成方法

    公开(公告)号：US06235621B1

    公开(公告)日：2001-05-22

    申请号：US09447008

    申请日：1999-11-22

    申请人： Erik S. Jeng ,  Tzu-Shih Yen ,  Chi-San Wu ,  Jong-Bor Wang

    发明人： Erik S. Jeng ,  Tzu-Shih Yen ,  Chi-San Wu ,  Jong-Bor Wang

    IPC分类号： H01L213205

    CPC分类号： H01L21/28114 ,  H01L21/28061 ,  H01L21/31111 ,  H01L21/76897 ,  H01L29/42376 ,  H01L29/6656

    摘要： A method for fabricating semiconductor device is disclosed herein. The first step is to form a first oxide layer on a substrate. Subsequently formed are polycrystalline silicon layer, a polycide layer, optionally a second oxide layer, and a silicon nitride layer on the first oxide layer. A photoresist pattern on the silicon layer is formed thereafter, and the silicon nitride layer is etched using the photoresist pattern as a mask to expose a portion of the polycide layer. The photoresist pattern is then, the polycide layer is isotropically etched to form an under cut in the polycide layer under the etched nitride layer (optional second oxide layer). The width of the top portion of the isotropically etched polycide layer is smaller than the width of the etched nitride layer. The isotropically etched polycide layer is then anistropically etched, and the polycrystalline layer is etched to expose a portion of the first oxide layer to form a multi-layer structure. Finally, spacers on side-walls of the multi-layer structure are formed to create the semiconductor device, the side-wall of the anisotropicaly etched polycide layer generated after the oxidation process is prevented from penetrating the spacer of the semiconductor device according to the present invention.

    摘要翻译： 本文公开了半导体器件的制造方法。 第一步是在衬底上形成第一氧化物层。 随后形成的是多晶硅层，多晶硅化物层，任选的第二氧化物层和第一氧化物层上的氮化硅层。 此后形成硅层上的光致抗蚀剂图案，并且使用光致抗蚀剂图案作为掩模蚀刻氮化硅层以暴露多晶硅化物层的一部分。 然后，光致抗蚀剂图案，多孔体层被各向同性地蚀刻以在蚀刻的氮化物层（可选的第二氧化物层）下的多晶硅化物层中形成下切割。 各向同性蚀刻的多晶硅化物层的顶部的宽度小于被蚀刻的氮化物层的宽度。 然后对各向同性蚀刻的多晶硅化物层进行水磨蚀蚀刻，并且蚀刻多晶层以暴露第一氧化物层的一部分以形成多层结构。 最后，形成多层结构的侧壁上的间隔物以形成半导体器件，防止在氧化处理之后产生的各向异性热蚀刻的多晶硅化物层的侧壁穿透根据本发明的半导体器件的间隔物 发明。