Nitridosilicate phosphor tunable light-emitting diodes by using UV and blue chips
    1.
    发明授权
    Nitridosilicate phosphor tunable light-emitting diodes by using UV and blue chips 有权
    硝酸硅磷酸盐可调谐发光二极管采用紫外线和蓝色芯片

    公开(公告)号:US08343785B2

    公开(公告)日:2013-01-01

    申请号:US12956244

    申请日:2010-11-30

    IPC分类号: H01L21/00 H01L33/00

    摘要: The present disclosure provides a radiation device. The radiation device includes a first light emitting diode (LED) operable to emit light having a first central wavelength; a second LED configured adjacent the first LED and operable to emit light having a second central wavelength substantially less than the first central wavelength; and a luminescent material disposed on the first LED and the second LED. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium, lithium (Ce3+, Li+).

    摘要翻译: 本公开提供了一种辐射装置。 辐射装置包括可操作以发射具有第一中心波长的光的第一发光二极管(LED) 第二LED,其被配置为与所述第一LED相邻,并且可操作以发射具有基本上小于所述第一中心波长的第二中心波长的光; 以及设置在第一LED和第二LED上的发光材料。 发光材料包括由铈(Ce 3+)和铈,锂(Ce 3+,Li +)中的一种掺杂的氮化硅锶(SrSi 6 N 8)。

    Phosphor with Ce3+/Ce3+, Li+ doped luminescent materials
    2.
    发明授权
    Phosphor with Ce3+/Ce3+, Li+ doped luminescent materials 有权
    具有Ce3 + / Ce3 +,Li +掺杂发光材料的荧光体

    公开(公告)号:US08329484B2

    公开(公告)日:2012-12-11

    申请号:US12938221

    申请日:2010-11-02

    IPC分类号: H01L21/00 H01L33/00

    摘要: The present disclosure provides an illuminating system including a light emitting device and a luminescent material disposed approximate the light-emitting device. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium (Ce3+) and lithium (Li+).

    摘要翻译: 本公开提供一种照明系统,包括发光装置和近似于发光装置的发光材料。 发光材料包括由铈(Ce 3+)和铈(Ce 3+)中的一种和锂(Li +)之一掺杂的氮化硅锶(SrSi 6 N 8)。

    TUNABLE PHOSPHOR FOR LUMINESCENT
    3.
    发明申请
    TUNABLE PHOSPHOR FOR LUMINESCENT 有权
    用于发光的TUNABLE磷光体

    公开(公告)号:US20120256212A1

    公开(公告)日:2012-10-11

    申请号:US13084135

    申请日:2011-04-11

    IPC分类号: H01L33/44 C01B33/00 C09K11/80

    摘要: The present disclosure provides an illuminating system including a light emitting diode (LED); and a tunable luminescent material disposed approximate the light-emitting diode, wherein the tunable luminescent material includes alkaline earth metal (AE) and silicon aluminum nitride doped by a rare earth element (RE), formulated as (AE)Si6−pAlpN8, wherein p is a parameter defining a relative aluminum content in weight and p is greater than zero.

    摘要翻译: 本公开提供了一种包括发光二极管(LED)的照明系统; 以及配置在发光二极管附近的可调发光材料,其中可调谐发光材料包括由稀土元素(RE)掺杂的碱土金属(AE)和氮化硅铝,其被配制为(AE)Si6-pAlpN8,其中p 是定义重量相对铝含量的参数,p大于零。

    NITRIDOSILICATE PHOSPHOR TUNABLE LIGHT-EMITTING DIODES BY USING UV AND BLUE CHIPS
    4.
    发明申请
    NITRIDOSILICATE PHOSPHOR TUNABLE LIGHT-EMITTING DIODES BY USING UV AND BLUE CHIPS 有权
    使用紫外线和蓝色荧光灯的氮化硅磷光体发光二极管

    公开(公告)号:US20120132936A1

    公开(公告)日:2012-05-31

    申请号:US12956244

    申请日:2010-11-30

    IPC分类号: H01L33/08 H01L33/32 H01L33/60

    摘要: The present disclosure provides a radiation device. The radiation device includes a first light emitting diode (LED) operable to emit light having a first central wavelength; a second LED configured adjacent the first LED and operable to emit light having a second central wavelength substantially less than the first central wavelength; and a luminescent material disposed on the first LED and the second LED. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium, lithium (Ce3+, Li+).

    摘要翻译: 本公开提供了一种辐射装置。 辐射装置包括可操作以发射具有第一中心波长的光的第一发光二极管(LED) 第二LED,其被配置为与所述第一LED相邻,并且可操作以发射具有基本上小于所述第一中心波长的第二中心波长的光; 以及设置在第一LED和第二LED上的发光材料。 发光材料包括由铈(Ce 3+)和铈,锂(Ce 3+,Li +)中的一种掺杂的氮化硅锶(SrSi 6 N 8)。

    Tunable phosphor for luminescent
    6.
    发明授权
    Tunable phosphor for luminescent 有权
    可调谐荧光粉发光

    公开(公告)号:US08716731B2

    公开(公告)日:2014-05-06

    申请号:US13084135

    申请日:2011-04-11

    IPC分类号: H01L33/44

    摘要: The present disclosure provides an illuminating system including a light emitting diode (LED); and a tunable luminescent material disposed approximate the light-emitting diode, wherein the tunable luminescent material includes alkaline earth metal (AE) and silicon aluminum nitride doped by a rare earth element (RE), formulated as (AE)Si6−pAlpN8, wherein p is a parameter defining a relative aluminum content in weight and p is greater than zero.

    摘要翻译: 本公开提供了一种包括发光二极管(LED)的照明系统; 以及配置在发光二极管附近的可调发光材料,其中可调谐发光材料包括由稀土元素(RE)掺杂的碱土金属(AE)和氮化硅铝,其被配制为(AE)Si6-pAlpN8,其中p 是定义重量相对铝含量的参数,p大于零。

    Phosphor and method for preparing the same
    7.
    发明授权
    Phosphor and method for preparing the same 有权
    荧光体及其制备方法

    公开(公告)号:US08585929B2

    公开(公告)日:2013-11-19

    申请号:US13243672

    申请日:2011-09-23

    IPC分类号: C09K11/08 C09K11/66

    CPC分类号: C09K11/59 C09K11/0883

    摘要: Disclosed is a phosphor and a method for preparing the same. The phosphor comprises a material having a general composition formula expressed by M1Si6N8-XOX (satisfying 0≦x≦1), where M is alkaline earth metal.

    摘要翻译: 公开了一种磷光体及其制备方法。 荧光体包括具有由M1Si6N8-XOX(满足0 @ x @)表示的总体组成式的材料,其中M是碱土金属。

    PHOSPHOR WITH Ce3+/Ce3+, Li+ DOPED LUMINESCENT MATERIALS
    8.
    发明申请
    PHOSPHOR WITH Ce3+/Ce3+, Li+ DOPED LUMINESCENT MATERIALS 有权
    具有Ce3 + / Ce3 +,Li + DOPED发光材料的磷光体

    公开(公告)号:US20120104929A1

    公开(公告)日:2012-05-03

    申请号:US12938221

    申请日:2010-11-02

    IPC分类号: H01J1/62 C09K11/79 H01L33/00

    摘要: The present disclosure provides an illuminating system including a light emitting device and a luminescent material disposed approximate the light-emitting device. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium (Ce3+) and lithium (Li+).

    摘要翻译: 本公开提供一种照明系统,包括发光装置和近似于发光装置的发光材料。 发光材料包括由铈(Ce 3+)和铈(Ce 3+)中的一种和锂(Li +)之一掺杂的氮化硅锶(SrSi 6 N 8)。

    Mask for Controlling Line End Shortening and Corner Rounding Arising from Proximity Effects
    9.
    发明申请
    Mask for Controlling Line End Shortening and Corner Rounding Arising from Proximity Effects 有权
    用于控制线端缩短的面具和靠近效应产生的角圆

    公开(公告)号:US20090176069A1

    公开(公告)日:2009-07-09

    申请号:US11971900

    申请日:2008-01-09

    IPC分类号: G03F1/00

    CPC分类号: G03F1/36 Y10T428/24802

    摘要: A mask for producing an image feature on an image surface during a semiconductor fabrication process is provided, the mask comprising a main feature having opaque areas and transmissive areas arranged in the form of the image feature, wherein each end of the main feature includes at least one of an opaque edge and a transmissive edge, wherein the opaque edge includes a set of transmissive assist features arranged therein such that the set of transmissive assist features align alternately with the transmissive areas of the main feature, and the transmissive edge includes a set of opaque assist features arranged therein such that the set of opaque assist features align alternately with the opaque areas of the main feature.

    摘要翻译: 提供了一种用于在半导体制造工艺期间在图像表面上产生图像特征的掩模,所述掩模包括具有以图像特征形式布置的不透明区域和透射区域的主要特征,其中主要特征的每个端部至少包括 不透明边缘和透射边缘之一,其中不透明边缘包括布置在其中的一组透射辅助特征,使得该组透射辅助特征与主要特征的透射区域交替地对准,并且透射边缘包括一组 不透明辅助特征被布置在其中,使得该组不透明辅助特征与主要特征的不透明区域交替地对准。

    Semiconductor device with a structure to protect alignment marks from damage in a planarization process
    10.
    发明授权
    Semiconductor device with a structure to protect alignment marks from damage in a planarization process 有权
    具有用于保护对准标记免受平坦化处理中的损伤的结构的半导体器件

    公开(公告)号:US08324743B2

    公开(公告)日:2012-12-04

    申请号:US12814228

    申请日:2010-06-11

    IPC分类号: H01L21/76

    摘要: A method of protecting alignment marks from damage in a planarization process includes providing a substrate including a surface, forming trenches in the substrate from the surface, forming a first dielectric layer on the substrate, forming a second dielectric layer on the first dielectric layer, forming a patterned second dielectric layer by removing second dielectric over the trenches, resulting in openings defined by the trenches and the patterned second dielectric layer, forming a third dielectric layer on the patterned second dielectric layer, the third dielectric layer filling the openings, and planarizing the third dielectric layer by using the patterned second dielectric layer as a stop layer, resulting in residual third dielectric in the openings that includes a first portion in the substrate and a second portion above the surface of the substrate.

    摘要翻译: 在平坦化工艺中保护对准标记免受损伤的方法包括提供包括表面的衬底,从表面在衬底中形成沟槽,在衬底上形成第一介电层,在第一介电层上形成第二介电层,形成 图案化的第二介电层,通过在沟槽上去除第二电介质,导致由沟槽和图案化的第二介电层限定的开口,在图案化的第二介电层上形成第三电介质层,填充开口的第三电介质层, 通过使用图案化的第二介电层作为阻挡层,在开口中产生残留的第三电介质,其包括衬底中的第一部分和衬底表面上的第二部分。