公开(公告)号：US08778784B2

公开(公告)日：2014-07-15

申请号：US13284900

申请日：2011-10-29

申请人： Chien-Min Sung ,  Ming Chi Kan ,  Shao Chung Hu

发明人： Chien-Min Sung ,  Ming Chi Kan ,  Shao Chung Hu

IPC分类号： H01L21/20

CPC分类号： H01L23/3733 ,  H01L23/3732 ,  H01L33/641 ,  H01L2924/0002 ,  H01L2933/0075 ,  H01L2924/00

摘要： Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.

摘要翻译： 提供了受压调节的半导体器件和相关方法。 在一个方面，例如，应力调节半导体器件可以包括半导体层，包括形成在半导体层上的碳层的应力调节界面层和耦合到与半导体层相对的碳层的散热器。 应力调节界面层是可操作的，以将半导体层和散热器之间的热膨胀系数差减小到或等于约10ppm /℃。

公开(公告)号：US20110127562A1

公开(公告)日：2011-06-02

申请号：US12787074

申请日：2010-05-25

申请人： Chien-Min Sung ,  Ming Chi Kan ,  Shao Chung Hu

发明人： Chien-Min Sung ,  Ming Chi Kan ,  Shao Chung Hu

IPC分类号： H01L33/00 ,  H05K1/02 ,  H05K3/00

CPC分类号： H05K1/053 ,  H01L23/3735 ,  H01L2924/0002 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0195 ,  H05K2201/0323 ,  H05K2203/0315 ,  Y10T29/49124 ,  H01L2924/00

摘要： Electrical substrates having low current leakage and high thermal conductivity, including associated methods, are provided. In one aspect for example, a multilayer substrate having improved thermal conductivity and dielectric properties can include a metal layer having a working surface with a local Ra of greater than about 0.1 micron, a dielectric layer coated on the working surface of the metal layer, and a thermally conductive insulating layer disposed on the dielectric layer, wherein the multilayer substrate has a minimum resistivity between the metal layer and the thermally conductive insulating layer across all of the working surface of at least 1×106 ohms.

摘要翻译： 提供了具有低电流泄漏和高导热性的电气基板，包括相关方法。 在一个方面，例如，具有改善的导热性和介电性能的多层基底可以包括具有局部Ra大于约0.1微米的工作表面的金属层，涂覆在金属层的工作表面上的电介质层，以及 布置在所述电介质层上的导热绝缘层，其中所述多层衬底在所述工作表面上的所述金属层和所述导热绝缘层之间具有至少为1×106欧姆的最小电阻率。

公开(公告)号：US20080144291A1

公开(公告)日：2008-06-19

申请号：US11610313

申请日：2006-12-13

申请人： Shao Chung Hu ,  Ming Chi Kan ,  Chion-Min Sung

发明人： Shao Chung Hu ,  Ming Chi Kan ,  Chion-Min Sung

IPC分类号： H05K7/20

CPC分类号： H05K1/053 ,  H05K1/0306 ,  H05K1/0373 ,  H05K1/056 ,  H05K3/44 ,  H05K2201/0323 ,  H05K2203/0315

摘要： Methods and devices for cooling printed circuit boards having at least one heat source are disclosed and described. Such a device may include a dielectric layer disposed onto a surface of a substrate. The dielectric layer may include a plurality of carbonaceous particles disposed in a dielectric material. In one aspect, the carbonaceous particles may be diamond particles. Furthermore, a circuit including a heat source may be disposed onto a surface of the dielectric layer opposite to the substrate such that the circuit is thermally coupled to the dielectric layer. Additionally, the dielectric layer may be configured to accelerate heat generated by the heat source away from the heat source.

摘要翻译： 公开并描述了用于冷却具有至少一个热源的印刷电路板的方法和装置。 这种器件可以包括设置在衬底的表面上的电介质层。 电介质层可以包括设置在电介质材料中的多个碳质颗粒。 一方面，碳质颗粒可以是金刚石颗粒。 此外，包括热源的电路可以设置在与衬底相对的电介质层的表面上，使得电路热耦合到电介质层。 另外，电介质层可以被配置为加热由热源产生的热量远离热源。

公开(公告)号：US20120280253A1

公开(公告)日：2012-11-08

申请号：US13284900

申请日：2011-10-29

申请人： Chien-Min Sung ,  Ming Chi Kan ,  Shao Chung Ku

发明人： Chien-Min Sung ,  Ming Chi Kan ,  Shao Chung Ku

IPC分类号： H01L23/34 ,  H01L29/24 ,  H01L29/20 ,  H01L33/64

CPC分类号： H01L23/3733 ,  H01L23/3732 ,  H01L33/641 ,  H01L2924/0002 ,  H01L2933/0075 ,  H01L2924/00

摘要： Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.

摘要翻译： 提供了受压调节的半导体器件和相关方法。 在一个方面，例如，应力调节半导体器件可以包括半导体层，包括形成在半导体层上的碳层的应力调节界面层和耦合到与半导体层相对的碳层的散热器。 应力调节界面层是可操作的，以将半导体层和散热器之间的热膨胀系数差减小到或等于约10ppm /℃。