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    Photo detector and method for forming thereof
    1.
    发明授权
    Photo detector and method for forming thereof 有权
    光电检测器及其形成方法

    公开(公告)号：US08063464B2

    公开(公告)日：2011-11-22

    申请号：US12541979

    申请日：2009-08-17

    申请人： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    发明人： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    IPC分类号： H01L31/075

    CPC分类号： H01L31/035272 ,  G02F1/1362 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

    摘要： A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

    摘要翻译： 公开了一种光电检测器。 光检测器具有基板，设置在基板上的半导体层，覆盖在半导体层上的绝缘层，覆盖在绝缘层上的层间电介质层，以及形成在层间电介质层的一部分上的两个电极。 半导体层具有第一掺杂区域，第二掺杂区域和位于第一掺杂区域和第二掺杂区域之间的本征区域。 层间绝缘层具有至少三个孔以暴露绝缘层的一部分，第一掺杂区的一部分和第二掺杂区。 电极通过两个孔连接到第一掺杂区和第二掺杂区。

    PHOTO DETECTOR AND METHOD FOR FORMING THEREOF
    2.
    发明申请
    PHOTO DETECTOR AND METHOD FOR FORMING THEREOF 有权
    照片检测器及其形成方法

    公开(公告)号：US20090302330A1

    公开(公告)日：2009-12-10

    申请号：US12541979

    申请日：2009-08-17

    申请人： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    发明人： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    IPC分类号： H01L33/00

    CPC分类号： H01L31/035272 ,  G02F1/1362 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

    摘要： A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

    摘要翻译： 公开了一种光电检测器。 光检测器具有基板，设置在基板上的半导体层，覆盖在半导体层上的绝缘层，覆盖在绝缘层上的层间电介质层，以及形成在层间电介质层的一部分上的两个电极。 半导体层具有第一掺杂区域，第二掺杂区域和位于第一掺杂区域和第二掺杂区域之间的本征区域。 层间绝缘层具有至少三个孔以暴露绝缘层的一部分，第一掺杂区的一部分和第二掺杂区。 电极通过两个孔连接到第一掺杂区和第二掺杂区。

    PHOTO DETECTOR AND METHOD FOR FORMING THEREOF
    3.
    发明申请
    PHOTO DETECTOR AND METHOD FOR FORMING THEREOF 有权
    照片检测器及其形成方法

    公开(公告)号：US20080284341A1

    公开(公告)日：2008-11-20

    申请号：US11776559

    申请日：2007-07-12

    申请人： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    发明人： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    IPC分类号： H01L31/075 ,  H01L31/18 ,  H05B41/36

    CPC分类号： H01L31/035272 ,  G02F1/1362 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

    摘要： A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

    摘要翻译： 公开了一种光电检测器。 光检测器具有基板，设置在基板上的半导体层，覆盖在半导体层上的绝缘层，覆盖在绝缘层上的层间电介质层，以及形成在层间电介质层的一部分上的两个电极。 半导体层具有第一掺杂区域，第二掺杂区域和位于第一掺杂区域和第二掺杂区域之间的本征区域。 层间绝缘层具有至少三个孔以暴露绝缘层的一部分，第一掺杂区的一部分和第二掺杂区。 电极通过两个孔连接到第一掺杂区和第二掺杂区。

    Photo detector and method for forming thereof
    4.
    发明授权
    Photo detector and method for forming thereof 有权
    光电检测器及其形成方法

    公开(公告)号：US07595541B2

    公开(公告)日：2009-09-29

    申请号：US11776559

    申请日：2007-07-12

    申请人： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    发明人： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    IPC分类号： H01L31/075

    CPC分类号： H01L31/035272 ,  G02F1/1362 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

    摘要： A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

    摘要翻译： 公开了一种光电检测器。 光检测器具有基板，设置在基板上的半导体层，覆盖在半导体层上的绝缘层，覆盖在绝缘层上的层间电介质层，以及形成在层间电介质层的一部分上的两个电极。 半导体层具有第一掺杂区域，第二掺杂区域和位于第一掺杂区域和第二掺杂区域之间的本征区域。 层间绝缘层具有至少三个孔以暴露绝缘层的一部分，第一掺杂区的一部分和第二掺杂区。 电极通过两个孔连接到第一掺杂区和第二掺杂区。

    Pixel structure and method for forming the same
    9.
    发明申请
    Pixel structure and method for forming the same 审中-公开
    像素结构及其形成方法

    公开(公告)号：US20080296581A1

    公开(公告)日：2008-12-04

    申请号：US11892191

    申请日：2007-08-21

    申请人： Chih-Wei Chao ,  Yi-Sheng Cheng ,  Kun-Chih Lin ,  Yi-Wei Chen

    发明人： Chih-Wei Chao ,  Yi-Sheng Cheng ,  Kun-Chih Lin ,  Yi-Wei Chen

    IPC分类号： H01L21/00 ,  H01L29/786

    CPC分类号： H01L27/1248 ,  G02F1/136213 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78621

    摘要： A pixel structure including at least one thin-film transistor, at least one storage capacitor, a patterned first metal layer, an interlayer dielectric layer, a passivation layer, and a patterned pixel electrode is provided. The storage capacitor is electrically connected to the thin-film transistor. The patterned first metal layer is covered by the interlayer dielectric layer. The thin-film transistor and the interlayer dielectric layer are covered by the passivation layer, wherein an opening is formed in the passivation layer and a part of the interlayer dielectric layer. The patterned pixel electrode is formed on a part of the passivation layer and a part of the interlayer dielectric layer and contacted with a part of the passivation layer and a part of the interlayer dielectric layer. The storage capacitor includes the patterned first metal layer, a remained part of the interlayer dielectric layer located under the opening, and the patterned pixel electrode.

    摘要翻译： 提供了包括至少一个薄膜晶体管，至少一个存储电容器，图案化第一金属层，层间介电层，钝化层和图案化像素电极的像素结构。 存储电容器电连接到薄膜晶体管。 图案化的第一金属层被层间介电层覆盖。 薄膜晶体管和层间电介质层被钝化层覆盖，其中在钝化层中形成一个开口和一部分层间电介质层。 图案化的像素电极形成在钝化层的一部分和层间电介质层的一部分上，并与钝化层的一部分和层间电介质层的一部分接触。 存储电容器包括图案化的第一金属层，位于开口下方的层间介电层的剩余部分和图案化的像素电极。