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    Reactive dye
    3.
    发明授权
    Reactive dye 有权
    活性染料

    公开(公告)号：US08536329B2

    公开(公告)日：2013-09-17

    申请号：US13439974

    申请日：2012-04-05

    申请人： Chien-Yu Chen ,  Chen-Lung Kao ,  Ya-Ching Yu ,  Huei-Chin Huang

    发明人： Chien-Yu Chen ,  Chen-Lung Kao ,  Ya-Ching Yu ,  Huei-Chin Huang

    IPC分类号： C07D403/04

    CPC分类号： C09B62/085 ,  C09B62/09 ,  D06P1/382

    摘要： A reactive dye is disclosed. The reactive dye has the structure of formula (I): wherein X, R1, R2, R3, n, Q1, Q2 and (HO3S)1-3 are defined in the specification. The reactive dye of the present invention has great build-up property, reproducibility and fastness.

    摘要翻译： 公开了一种活性染料。 活性染料具有式（I）的结构：其中X，R1，R2，R3，n，Q1，Q2和（HO3S）1-3在本说明书中定义。 本发明的活性染料具有良好的累积性，再现性和牢度。

    Semiconductor structure, method for manufacturing semiconductor structure and semiconductor package
    4.
    发明授权
    Semiconductor structure, method for manufacturing semiconductor structure and semiconductor package 有权
    半导体结构，半导体结构和半导体封装的制造方法

    公开(公告)号：US08039393B2

    公开(公告)日：2011-10-18

    申请号：US13088954

    申请日：2011-04-18

    申请人： Meng-Jen Wang ,  Chien-Yu Chen

    发明人： Meng-Jen Wang ,  Chien-Yu Chen

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/16 ,  H01L2224/16225 ,  H01L2924/15311

    摘要： A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor package are provided. The method for manufacturing a semiconductor structure includes the following steps. Firstly, a silicon substrate is provided. Next, a part of the silicon substrate is removed to form a ring hole and a silicon pillar surrounded by the silicon pillar. Then, a photosensitive material is disposed in the ring hole, wherein the photosensitive material is insulating. After that, the silicon pillar is removed, such that the ring hole forms a through hole and the photosensitive material covers a lateral wall of the through hole. Lastly, the conductive material is disposed in the through hole, wherein the outer surface of the conductive material is surrounded by the photosensitive material.

    摘要翻译： 提供半导体结构，半导体结构的制造方法以及半导体封装。 制造半导体结构的方法包括以下步骤。 首先，提供硅基板。 接下来，去除硅衬底的一部分以形成由硅柱包围的环形孔和硅柱。 然后，感光材料设置在环形孔中，其中感光材料是绝缘的。 之后，去除硅柱，使得环孔形成通孔，并且感光材料覆盖通孔的侧壁。 最后，导电材料设置在通孔中，其中导电材料的外表面被感光材料包围。

    SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR PACKAGE
    5.
    发明申请
    SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR PACKAGE 有权
    半导体结构，制造半导体结构和半导体封装的方法

    公开(公告)号：US20110195568A1

    公开(公告)日：2011-08-11

    申请号：US13088954

    申请日：2011-04-18

    申请人： Meng-Jen WANG ,  Chien-Yu Chen

    发明人： Meng-Jen WANG ,  Chien-Yu Chen

    IPC分类号： H01L21/768 ,  H01L21/60

    CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/16 ,  H01L2224/16225 ,  H01L2924/15311

    摘要： A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor package are provided. The method for manufacturing a semiconductor structure includes the following steps. Firstly, a silicon substrate is provided. Next, a part of the silicon substrate is removed to form a ring hole and a silicon pillar surrounded by the silicon pillar. Then, a photosensitive material is disposed in the ring hole, wherein the photosensitive material is insulating. After that, the silicon pillar is removed, such that the ring hole forms a through hole and the photosensitive material covers a lateral wall of the through hole. Lastly, the conductive material is disposed in the through hole, wherein the outer surface of the conductive material is surrounded by the photosensitive material.

    摘要翻译： 提供半导体结构，半导体结构的制造方法以及半导体封装。 制造半导体结构的方法包括以下步骤。 首先，提供硅基板。 接下来，去除硅衬底的一部分以形成由硅柱包围的环形孔和硅柱。 然后，感光材料设置在环形孔中，其中感光材料是绝缘的。 之后，去除硅柱，使得环孔形成通孔，并且感光材料覆盖通孔的侧壁。 最后，导电材料设置在通孔中，其中导电材料的外表面被感光材料包围。

    Wafer-level chip packaging process and chip package structure
    6.
    发明授权
    Wafer-level chip packaging process and chip package structure 有权
    晶圆级芯片封装工艺和芯片封装结构

    公开(公告)号：US07696008B2

    公开(公告)日：2010-04-13

    申请号：US11616901

    申请日：2006-12-28

    申请人： Chien-Yu Chen

    发明人： Chien-Yu Chen

    IPC分类号： H01L21/00 ,  H01L21/40

    CPC分类号： H01L33/483 ,  H01L2224/11 ,  H01L2924/16235

    摘要： A wafer-level chip packaging process includes the following steps. First, a wafer having a plurality of chip units, an active surface, and a corresponding back surface is provided. Each chip unit has a plurality of pads on the active surface. Next, a plurality of through holes is formed under the pads. The through holes are filled with a conductive material such that the conductive material within each through hole is electrically connected to corresponding one of the pads and a portion of the conductive material is exposed and protrudes from the back surface of the wafer. Thereafter, a transparent adhesive layer is formed on the active surface. Next, a transparent cover panel is disposed on the transparent adhesive layer such that the transparent cover panel is connected to the wafer through the transparent adhesive layer. Afterwards, a singulation step is performed to form a plurality of independent chip package structures.

    摘要翻译： 晶片级芯片封装工艺包括以下步骤。 首先，提供具有多个芯片单元，活性表面和相应后表面的晶片。 每个芯片单元在活动表面上具有多个焊盘。 接下来，在焊盘下面形成有多个通孔。 通孔填充有导电材料，使得每个通孔内的导电材料电连接到对应的一个焊盘，并且一部分导电材料暴露并从晶片的后表面突出。 此后，在活性表面上形成透明粘合剂层。 接下来，透明盖板设置在透明粘合剂层上，使得透明盖板通过透明粘合剂层连接到晶片。 之后，执行单个步骤以形成多个独立的芯片封装结构。

    Disazo red reactive dye compound containing quarternary ammonium group
    8.
    发明授权
    Disazo red reactive dye compound containing quarternary ammonium group 失效
    含有季铵基的双偶氮红活性染料化合物

    公开(公告)号：US07232895B1

    公开(公告)日：2007-06-19

    申请号：US11545420

    申请日：2006-10-11

    申请人： Wen-Jang Chen ,  Chien-Yu Chen ,  Chen-Lung Kao

    发明人： Wen-Jang Chen ,  Chien-Yu Chen ,  Chen-Lung Kao

    IPC分类号： C09B62/513

    CPC分类号： C09B62/513

    摘要： The present invention relates to a disazo red reactive dyestuff containing quaternary ammonium group of the following formula (1): wherein R′, R″, m, n, Y1 and Y2 are defined the same as in the specification. The disazo red reactive dyestuff of the present invention has a good dye uptake while dyeing cellulose fibers, which satisfies the economical demand of high build up in the market.

    摘要翻译： 本发明涉及含有下式（1）的季铵基的双偶氮红活性染料：其中R'，R“，m，n，Y 1和Y 2' / SUB>与说明书中的定义相同。 本发明的双偶氮红活性染料在染色纤维素纤维时具有良好的染料吸收，满足市场上高度成型的经济需求。

    ANTI-STATIC SUBSTRATE
    9.
    发明申请
    ANTI-STATIC SUBSTRATE 审中-公开
    防静电基板

    公开(公告)号：US20070048530A1

    公开(公告)日：2007-03-01

    申请号：US11162079

    申请日：2005-08-29

    申请人： Wen-Kuang Tsao ,  Chien-Yu Chen

    发明人： Wen-Kuang Tsao ,  Chien-Yu Chen

    IPC分类号： B32B17/06 ,  B32B19/00

    CPC分类号： B32B7/02

    摘要： An anti-electrostatic discharge substrate adapted to eliminate electrostatic charges generated from friction between a carrier and the anti-electrostatic discharge substrate is provided. The anti-electrostatic discharge substrate includes a substrate having a front surface and a back surface; and a conductive layer on the back surface, wherein the electrostatic charges accumulated on the carrier are eliminated through the conductive layer when the substrate is in contact with the carrier.

    摘要翻译： 提供了适于消除由载体和抗静电放电基板之间的摩擦产生的静电电荷的抗静电放电基板。 防静电放电衬底包括具有前表面和后表面的衬底; 以及背面上的导电层，其中当衬底与载体接触时，通过导电层消除积聚在载体上的静电电荷。