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    Structure and process for conductive contact integration
    1.
    发明授权
    Structure and process for conductive contact integration 有权
    导电触点集成的结构和工艺

    公开(公告)号：US08679970B2

    公开(公告)日：2014-03-25

    申请号：US12124698

    申请日：2008-05-21

    申请人： Chih-Chao Yang ,  Lynne M. Gignac

    发明人： Chih-Chao Yang ,  Lynne M. Gignac

    IPC分类号： H01L23/48 ,  H01L21/02 ,  H01L21/768

    CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure including a highly reliable high aspect ratio contact structure in which key-hole seam formation is eliminated is provided. The key-hole seam formation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectric material. The densified noble metal-containing liner is located atop a diffusion barrier and both those elements separate the conductive material of the inventive contact structure from a conductive material of an underlying semiconductor structure. The densified noble metal-containing liner of the present invention is formed by deposition of a noble metal-containing material having a first resistivity and subjecting the deposited noble metal-containing material to a densification treatment process (either thermal or plasma) that decreases the resistivity of the deposited noble metal-containing material to a lower resistivity.

    摘要翻译： 提供了一种半导体结构，其包括消除了键孔形成的高可靠性高纵横比接触结构。 在本发明中通过在存在于电介质材料中的高纵横比接触开口内提供致密的含贵金属衬里来消除键孔缝形成。 致密化的含贵金属的衬里位于扩散阻挡层的顶部，并且这两个元件将本发明接触结构的导电材料与下面的半导体结构的导电材料分开。 通过沉积具有第一电阻率的含贵金属的材料形成本发明的含致密化的含贵金属的衬里，并使沉积的含贵金属的材料经受降低电阻率的致密化处理（热或等离子体） 的沉积的含贵金属材料的电阻率较低。

    EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS
    3.
    发明申请
    EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS 有权
    电气保险丝应用的有效互连结构

    公开(公告)号：US20090278229A1

    公开(公告)日：2009-11-12

    申请号：US12119125

    申请日：2008-05-12

    申请人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

    发明人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

    IPC分类号： H01L23/525 ,  H01L21/768

    CPC分类号： H01L23/53295 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.

    摘要翻译： 提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。 互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。 熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。 电介质覆盖层位于电介质材料和导电材料的顶部。 在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。 因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

    Efficient interconnect structure for electrical fuse applications
    5.
    发明授权
    Efficient interconnect structure for electrical fuse applications 有权
    电熔丝应用的高效互连结构

    公开(公告)号：US07893520B2

    公开(公告)日：2011-02-22

    申请号：US12119125

    申请日：2008-05-12

    申请人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

    发明人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

    IPC分类号： H01L29/00

    CPC分类号： H01L23/53295 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.

    摘要翻译： 提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。 互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。 熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。 电介质覆盖层位于电介质材料和导电材料的顶部。 在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。 因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

    STRUCTURE AND PROCESS FOR CONDUCTIVE CONTACT INTEGRATION
    6.
    发明申请
    STRUCTURE AND PROCESS FOR CONDUCTIVE CONTACT INTEGRATION 有权
    导电接触集成的结构与工艺

    公开(公告)号：US20090289365A1

    公开(公告)日：2009-11-26

    申请号：US12124698

    申请日：2008-05-21

    申请人： Chih-Chao Yang ,  Lynne M. Gignac

    发明人： Chih-Chao Yang ,  Lynne M. Gignac

    IPC分类号： H01L23/48 ,  H01L21/44

    CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure including a highly reliable high aspect ratio contact structure in which key-hole seam formation is eliminated is provided. The key-hole seam formation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectric material. The densified noble metal-containing liner is located atop a diffusion barrier and both those elements separate the conductive material of the inventive contact structure from a conductive material of an underlying semiconductor structure. The densified noble metal-containing liner of the present invention is formed by deposition of a noble metal-containing material having a first resistivity and subjecting the deposited noble metal-containing material to a densification treatment process (either thermal or plasma) that decreases the resistivity of the deposited noble metal-containing material to a lower resistivity.

    摘要翻译： 提供了一种半导体结构，其包括消除了键孔形成的高可靠性高纵横比接触结构。 在本发明中通过在存在于电介质材料中的高纵横比接触开口内提供致密的含贵金属衬里来消除键孔缝形成。 致密化的含贵金属的衬里位于扩散阻挡层的顶部，并且这两个元件将本发明接触结构的导电材料与下面的半导体结构的导电材料分开。 通过沉积具有第一电阻率的含贵金属的材料形成本发明的含致密化的含贵金属的衬里，并使沉积的含贵金属的材料经受降低电阻率的致密化处理（热或等离子体） 的沉积的含贵金属材料的电阻率较低。

    EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS
    8.
    发明申请
    EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS 有权
    电气保险丝应用的有效互连结构

    公开(公告)号：US20110092031A1

    公开(公告)日：2011-04-21

    申请号：US12976445

    申请日：2010-12-22

    申请人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

    发明人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

    IPC分类号： H01L21/283

    CPC分类号： H01L23/53295 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.

    摘要翻译： 提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。 互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。 熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。 电介质覆盖层位于电介质材料和导电材料的顶部。 在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。 因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

    Efficient interconnect structure for electrical fuse applications
    9.
    发明授权
    Efficient interconnect structure for electrical fuse applications 有权
    电熔丝应用的高效互连结构

    公开(公告)号：US08133767B2

    公开(公告)日：2012-03-13

    申请号：US12976445

    申请日：2010-12-22

    申请人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

    发明人： Chih-Chao Yang ,  Lynne M. Gignac ,  Chao-Kun Hu

    IPC分类号： H01L21/82

    CPC分类号： H01L23/53295 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.

    摘要翻译： 提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。 互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。 熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。 电介质覆盖层位于电介质材料和导电材料的顶部。 在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。 因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。