公开(公告)号：US07087363B2

公开(公告)日：2006-08-08

申请号：US10650977

申请日：2003-08-29

申请人： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

发明人： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

IPC分类号： G03F7/00

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.

摘要翻译： 一种形成顶栅极薄膜晶体管（TFT）的方法。 通过使用第一掩模版进行光刻，在活性区域的硅层上形成具有厚的光致抗蚀剂层部分和光致抗蚀剂层部分的光致抗蚀剂层。 因此，通过相同的图案化工艺限定硅岛中的沟道层和源/漏区。 此外，硅岛中的栅极和LDD区域通过使用第二掩模版和背面曝光工艺的光刻来定义。 因此，本发明的顶栅TFT制造方法仅需要两个掩模版，从而降低成本。

公开(公告)号：US06692983B1

公开(公告)日：2004-02-17

申请号：US10400032

申请日：2003-03-26

申请人： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

发明人： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

IPC分类号： H01L2100

CPC分类号： G02F1/136227 ,  G02F2001/136222 ,  H01L27/14685

摘要： A method of forming a color filter on a substrate having pixel driving elements. A substrate having a plurality of light-transmitting areas and active areas is provided. A pixel driving element is formed on the substrate in each active area, wherein an insulation layer is formed between each pixel driving element. A planarization layer is formed on the pixel driving elements and the insulation layer. Part of the planarization layer is removed to form contact holes and openings, wherein the contact holes expose part of the pixel driving elements, and the openings expose the insulation layer in the light-transmitting areas. Color pigment is filled into the openings to form a color filter on the substrate having the pixel driving elements. Transparent pixel electrodes are formed in the contact holes to electrically connect the pixel driving elements, wherein the transparent electrodes extend onto part of the color filter.

摘要翻译： 一种在具有像素驱动元件的基板上形成滤色器的方法。 提供具有多个透光区域和有源区域的基板。 在每个有源区域中的衬底上形成像素驱动元件，其中在每个像素驱动元件之间形成绝缘层。 在像素驱动元件和绝缘层上形成平坦化层。 去除平坦化层的一部分以形成接触孔和开口，其中接触孔暴露部分像素驱动元件，并且开口暴露透光区域中的绝缘层。 将彩色颜料填充到开口中，以在具有像素驱动元件的基板上形成滤色器。 透明像素电极形成在接触孔中以电连接像素驱动元件，其中透明电极延伸到滤色器的一部分上。

公开(公告)号：US06870585B2

公开(公告)日：2005-03-22

申请号：US10622795

申请日：2003-07-18

申请人： Chih-Chiang Chen ,  Jiun-Jye Chang ,  Ching-Sang Chuang

发明人： Chih-Chiang Chen ,  Jiun-Jye Chang ,  Ching-Sang Chuang

IPC分类号： G02B5/08 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/133514 ,  G02F2001/136222

摘要： A transflective LCD device having various cell gaps. The transflective LCD device is characterized by the passivation layer being formed on a lower substrate in a reflective region. A color filter layer is formed above the passivation layer, wherein a first thickness of the color filter layer in the reflective region is smaller than a second thickness of the color filter layer in a transmissive region. A transparent organic element is formed on an inner side of an upper substrate in the reflective region for bridging a gap in a liquid crystal layer between upper and lower substrates, wherein one end of the transparent organic element shores up the lower substrate. Thus, the gap thickness in the reflective region is smaller than that in the transmissive region.

摘要翻译： 具有各种单元间隙的透反射LCD装置。 半透射型LCD器件的特征在于钝化层形成在反射区域中的下基板上。 在钝化层上方形成滤色器层，其中反射区域中的滤色器层的第一厚度小于透射区域中的滤色器层的第二厚度。 透明有机元件形成在反射区域中的上基板的内侧，用于桥接上基板和下基板之间的液晶层中的间隙，其中透明有机元件的一端向下延伸到下基板。 因此，反射区域中的间隙厚度小于透射区域中的间隙厚度。

公开(公告)号：US20050250050A1

公开(公告)日：2005-11-10

申请号：US10650977

申请日：2003-08-29

申请人： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

发明人： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

IPC分类号： H01L21/027 ,  G03F7/00 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.

摘要翻译： 一种形成顶栅极薄膜晶体管（TFT）的方法。 通过使用第一掩模版进行光刻，在活性区域的硅层上形成具有厚的光致抗蚀剂层部分和光致抗蚀剂层部分的光致抗蚀剂层。 因此，通过相同的图案化工艺限定硅岛中的沟道层和源/漏区。 此外，硅岛中的栅极和LDD区域通过使用第二掩模版和背面曝光工艺的光刻来定义。 因此，本发明的顶栅TFT制造方法仅需要两个掩模版，从而降低成本。

公开(公告)号：US06511870B2

公开(公告)日：2003-01-28

申请号：US09850058

申请日：2001-05-08

申请人： Chih-Chiang Chen ,  Jiun-Jye Chang ,  Ching-Sang Chuang

发明人： Chih-Chiang Chen ,  Jiun-Jye Chang ,  Ching-Sang Chuang

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： A method of fabricating a polysilicon thin film transistor with a self-aligned lightly doped drain (LDD) is described. At first a polysilicon-island region and a gate insulating layer are subsequently formed on a glass substrate performed by a pre-treatment. Then a metal layer and a cap layer are subsequently formed on the gate insulating layer. The cap layer and the metal layer are defined to form a gate. A heavily doped region is formed in the polysilicon island region with serving the gate as a mask. An activation step is performed on the heavily doped region and a sidewall of the metal layer. The cap layer above the metal layer and the sidewall of the metal layer performed by the activation step are removed. A lightly doped region is formed in the polysilicon-island region with serving the remaining metal layer.

公开(公告)号：US20100110317A1

公开(公告)日：2010-05-06

申请号：US12421752

申请日：2009-04-10

申请人： Chih-Chiang Chen

发明人： Chih-Chiang Chen

IPC分类号： G02F1/1335 ,  H04N13/04

CPC分类号： G02F1/133553 ,  G02F2001/133562 ,  H04N13/302 ,  H04N13/324

摘要： A pixel structure, a 3D image/multiple view liquid crystal display device and a method of manufacturing the same are provided. The pixel structure comprises a first substrate, a second substrate being parallel with the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, a reflecting structure, and a light angle control structure. The reflecting structure is disposed on the first substrate, and the light angle control structure is disposed on the second substrate. The light angle control structure is configured to reflect a light entering from the first substrate to the reflecting structure, and the reflecting structure is configured to reflect the light again such that the light exits from the pixel structure in a predetermined direction.

摘要翻译： 提供像素结构，3D图像/多视图液晶显示装置及其制造方法。 像素结构包括第一衬底，与第一衬底平行的第二衬底，设置在第一衬底和第二衬底之间的液晶层，反射结构和光角度控制结构。 反射结构设置在第一基板上，光角控制结构设置在第二基板上。 光角控制结构被配置为将从第一基板进入的光反射到反射结构，并且反射结构被配置为再次反射光，使得光沿着预定方向从像素结构离开。

公开(公告)号：US20100097307A1

公开(公告)日：2010-04-22

申请号：US12395153

申请日：2009-02-27

申请人： Chih-Chiang Chen

发明人： Chih-Chiang Chen

IPC分类号： G09G3/36

CPC分类号： G09G3/3611 ,  G09G2310/061 ,  G09G2320/046 ,  G09G2360/16

摘要： To reduce the image sticking, a first number of frames outputted from the multimedia signal source are successively received. The first number of frames are processed to obtain a plurality of corresponding gray-level characteristic. A predefined frame is inserted into a plurality of incoming frame with a specified ratio if the plurality gray-level characteristic is qualified to a specified predefined condition.

摘要翻译： 为了减少图像残留，依次接收从多媒体信号源输出的第一帧数。 处理第一数量的帧以获得多个对应的灰度特性。 如果多个灰度特性符合指定的预定义条件，则预定义帧被插入具有指定比例的多个输入帧中。

公开(公告)号：US20100073586A1

公开(公告)日：2010-03-25

申请号：US12321021

申请日：2009-01-14

申请人： Chih-Chiang Chen

发明人： Chih-Chiang Chen

IPC分类号： G02F1/133 ,  H01L27/088

CPC分类号： G09G3/3659 ,  G02F1/134363 ,  G02F1/13624 ,  G02F1/1393 ,  G02F2001/134345 ,  G09G2300/0443 ,  G09G2300/0842 ,  G09G2320/0242 ,  G09G2320/0276 ,  G09G2320/028

摘要： A pixel driving device for a liquid crystal display (LCD) panel includes first and second transistors and first and second storage capacitors. The second transistor has a gate electrode coupled to a gate electrode of the first transistor, and a drain electrode coupled to a drain electrode of the first transistor. The first storage capacitor has a capacitor terminal coupled to a source electrode of the first transistor. The second storage capacitor has a first capacitor terminal coupled to a source electrode of the second transistor, and a second capacitor terminal coupled to the gate electrode of the first transistor of the pixel driving device in another pixel row of the LCD panel.

摘要翻译： 用于液晶显示器（LCD）面板的像素驱动装置包括第一和第二晶体管以及第一和第二存储电容器。 第二晶体管具有耦合到第一晶体管的栅电极的栅电极和耦合到第一晶体管的漏电极的漏电极。 第一存储电容器具有耦合到第一晶体管的源电极的电容器端子。 第二存储电容器具有耦合到第二晶体管的源电极的第一电容器端子和耦合到LCD面板的另一像素行中的像素驱动装置的第一晶体管的栅电极的第二电容器端子。

公开(公告)号：US20070238283A1

公开(公告)日：2007-10-11

申请号：US11278684

申请日：2006-04-05

申请人： Chih-Chiang Chen ,  Chender Huang ,  Pei-Haw Tsao ,  Chung Wang ,  Wen Huang

发明人： Chih-Chiang Chen ,  Chender Huang ,  Pei-Haw Tsao ,  Chung Wang ,  Wen Huang

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L24/02 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14

摘要： An under bump metallurgy (UBM) structure formed over a bond pad and for use in conjunction with a solder ball, provides an upper copper layer over a subjacent composite film that includes a nickel film over a further copper film over a titanium film. One or more reflow operations are used to form a molten solder ball and conditions are selected to ensure that all of the copper from the upper copper layer is dissolved within the molten solder. For SnAg leadfree solder, this leads to the formation of SnAgCu-like leadfree solder. The resulting interface between the solder ball and the nickel layer includes regularly spaced Cu6Sn5 nodules as intermetallics but is free of Ni3Sn4 which can spall into the molten solder causing reliability problems.

摘要翻译： 在接合焊盘上形成并与焊球结合使用的凸块下金属（UBM）结构在下层复合膜上提供上铜层，该复合膜在钛膜上的另外的铜膜上包括镍膜。 使用一个或多个回流操作来形成熔融焊球，并且选择条件以确保来自上铜层的所有铜都溶解在熔融焊料中。 对于SnAg无铅焊料，这导致形成SnAgCu样无铅焊料。 焊球和镍层之间的所得界面包括金属间化合物的规则间隔的Cu 6 N 5 N结，但不含Ni 3 Sn， SUB> 4 ，其可以剥落到熔融焊料中引起可靠性问题。

公开(公告)号：US06291762B1

公开(公告)日：2001-09-18

申请号：US09456640

申请日：1999-12-08

申请人： Yih-Song Jan ,  Jong-Min Liu ,  Chih-Chiang Chen ,  Lee-Ching Kuo

发明人： Yih-Song Jan ,  Jong-Min Liu ,  Chih-Chiang Chen ,  Lee-Ching Kuo

IPC分类号： H01L31042

CPC分类号： B32B17/10788 ,  B32B17/06 ,  B32B17/10018 ,  B32B27/36 ,  H01L31/02 ,  H01L31/048 ,  H01L31/0481 ,  Y02E10/50

摘要： The present invention discloses a dust-proof and weather resistant photovoltaic module, including (a) a front substrate of light transmittable safety glass plate, wherein a photo-catalyst composition is applied to the safety glass plate; (b) a back substrate of weather resistant polyester polymer; and (c) a photosensitizer including electrical circuit copper foils and polymeric enclosing material (EVA) which is located between the front substrate and the back substrate. The method for fabricating a front substrate of a photovoltaic module includes applying a photo-catalyst composition onto a safety glass plate; evaporating the photo-catalyst composition to a gel; and seating the gel to Rutile titanium dioxide. The photo-catalyst composition includes a metal oxide, an acid regent and a surfactant.

摘要翻译： 本发明公开了一种防尘防风光伏模块，包括（a）可透光安全玻璃板的前基板，其中将光催化剂组合物施加到安全玻璃板上; （b）耐候性聚酯聚合物的背面基材; 和（c）光敏剂，其包括位于前基板和后基板之间的电路铜箔和聚合物封闭材料（EVA）。 制造光伏组件的前基板的方法包括将光催化剂组合物涂覆在安全玻璃板上; 将光催化剂组合物蒸发成凝胶; 并将凝胶置于金红石二氧化钛上。 光催化剂组合物包括金属氧化物，酸摄取剂和表面活性剂。