公开(公告)号：US20100171094A1

公开(公告)日：2010-07-08

申请号：US12652373

申请日：2010-01-05

申请人： Chih-Chiang LU ,  Wei-Chih PENG ,  Chien-Yuan WANG ,  Wei-Yo CHEN ,  Shiau-Huei SAN ,  Min-Hsun Hsieh

发明人： Chih-Chiang LU ,  Wei-Chih PENG ,  Chien-Yuan WANG ,  Wei-Yo CHEN ,  Shiau-Huei SAN ,  Min-Hsun Hsieh

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/0079 ,  H01L33/46

摘要： A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure.

摘要翻译： 发光半导体装置包括发光结构，反射结构和载体。 发光结构包括第一类型半导体层，第二类型半导体层和位于第一类型半导体层和第二类型半导体层之间的发光层。 反射结构具有第一透明导电层，第一图案化反射层，第二透明导电层和第二图案化反射层。 第一图案化反射层设置在第一透明导电层和第二透明导电层之间，并且具有用于物理连接第一透明导电层和第二透明导电层的开口。 第二透明导电层设置在第一图案化反射层和第二图案化反射层之间。 第二图案化反射层位于与开口对应的区域上。 发光结构和载体分别在反射结构的两侧。

公开(公告)号：US20100308355A1

公开(公告)日：2010-12-09

申请号：US12481048

申请日：2009-06-09

申请人： Min-Hsun HSIEH ,  Chih-Chiang LU ,  Chien-Yuan WANG ,  Yen-Wen CHEN ,  Jui-Hung YEH ,  Shih-Chin HUNG ,  Yu-Wei TU ,  Chun-Yi WU ,  Wei-Chih PENG

发明人： Min-Hsun HSIEH ,  Chih-Chiang LU ,  Chien-Yuan WANG ,  Yen-Wen CHEN ,  Jui-Hung YEH ,  Shih-Chin HUNG ,  Yu-Wei TU ,  Chun-Yi WU ,  Wei-Chih PENG

IPC分类号： H01L33/00 ,  H01L21/28 ,  H01L21/66

CPC分类号： H01L33/0079 ,  H01L33/382 ,  H01L33/387 ,  H01L33/642

摘要： A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

摘要翻译： 具有减薄结构的半导体发光器件包括在半导体发光结构和载体之间形成的薄化结构。 该制造方法包括以下步骤：在衬底上形成半导体发光结构; 将半导体发光结构附着到支撑体上; 使衬底变薄以形成薄的结构; 将载体形成或附着到薄化的基底上; 并移除支持。

公开(公告)号：US20110286201A1

公开(公告)日：2011-11-24

申请号：US13195620

申请日：2011-08-01

申请人： Chien-Yuan WANG ,  Min-Hsun Hsieh ,  Chih-Chiang Lu

发明人： Chien-Yuan WANG ,  Min-Hsun Hsieh ,  Chih-Chiang Lu

IPC分类号： F21V9/16 ,  F21V9/00

CPC分类号： G02F1/353 ,  F21K9/64 ,  F21V9/30 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K.