公开(公告)号：US06759342B2

公开(公告)日：2004-07-06

申请号：US10269219

申请日：2002-10-11

申请人： Chih-Hsiang Yao ,  Lain-Jong Li ,  Bi-Troug Chen ,  Syun-Ming Jan

发明人： Chih-Hsiang Yao ,  Lain-Jong Li ,  Bi-Troug Chen ,  Syun-Ming Jan

IPC分类号： H01L21302

CPC分类号： H01L21/3105 ,  H01J2237/0206 ,  H01J2237/3342 ,  H01L21/31116

摘要： A method for reducing electrical charge imbalances in a semiconductor process wafer including providing a semiconductor process wafer including a dielectric insulating layer; exposing the semiconductor process wafer to a semiconductor process whereby an electrical charge imbalance accumulates in charge imbalance portions of the dielectric insulating layer; and, treating the semiconductor process wafer with a controlled atmosphere of treatment gas including at least one of inert gas and hydrogen to reduce an accumulated charge imbalance in the charge imbalance portions.

摘要翻译： 一种用于减少半导体工艺晶片中的电荷不平衡的方法，包括提供包括介电绝缘层的半导体工艺晶片; 将半导体工艺晶片暴露于半导体工艺，由此电荷不平衡累积在电介质绝缘层的电荷不平衡部分中; 以及在包含惰性气体和氢气中的至少一种的处理气体的受控气氛下处理所述半导体处理晶片以减少所述电荷不平衡部分中的累积电荷不平衡。

公开(公告)号：US07193325B2

公开(公告)日：2007-03-20

申请号：US10835788

申请日：2004-04-30

申请人： Zhen-Cheng Wu ,  Bi-Troug Chen ,  Weng Chang ,  Syun-Ming Jang ,  Su-Horng Lin

发明人： Zhen-Cheng Wu ,  Bi-Troug Chen ,  Weng Chang ,  Syun-Ming Jang ,  Su-Horng Lin

IPC分类号： H01L23/48

CPC分类号： H01L21/31633 ,  H01L21/02046 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832

摘要： A method of forming a SiCOH etch stop layer in a copper damascene process is described. A substrate with an exposed metal layer is treated with H2 or NH3 plasma to remove metal oxides. Trimethylsilane is flowed into a chamber with no RF power at about 350° C. to form at least a monolayer on the exposed metal layer. The SiCOH layer is formed by a PECVD process including trimethylsilane and CO2 source gases. Optionally, a composite SiCOH layer comprised of a low compressive stress layer on a high compressive stress layer is formed on the substrate. A conventional damascene sequence is then used to form a second metal layer on the exposed metal layer. Via Rc stability is improved and a lower leakage current is achieved with the trimethylsilane passivation layer. A composite SiCOH etch stop layer provides improved stress migration resistance compared to a single low stress SiCOH layer.

摘要翻译： 描述了在铜镶嵌工艺中形成SiCOH蚀刻停止层的方法。 具有暴露的金属层的衬底用H 2 N 3或NH 3 3等离子体处理以除去金属氧化物。 三甲基硅烷在约350℃下流入没有RF功率的室，以在暴露的金属层上形成至少单层。 SiCOH层通过包括三甲基硅烷和CO 2原子气体的PECVD工艺形成。 任选地，在基底上形成由高压缩应力层上的低压应力层构成的复合SiCOH层。 然后使用常规的镶嵌序列在暴露的金属层上形成第二金属层。 通过Rc稳定性提高，并且用三甲基硅烷钝化层实现较低的漏电流。 与单个低应力SiCOH层相比，复合SiCOH蚀刻停止层提供改进的应力迁移阻力。

公开(公告)号：US20050245100A1

公开(公告)日：2005-11-03

申请号：US10835788

申请日：2004-04-30

申请人： Zhen-Cheng Wu ,  Bi-Troug Chen ,  Weng Chang ,  Syun-Ming Jang ,  Su-Horng Lin

发明人： Zhen-Cheng Wu ,  Bi-Troug Chen ,  Weng Chang ,  Syun-Ming Jang ,  Su-Horng Lin

IPC分类号： H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/31633 ,  H01L21/02046 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832

摘要： A method of forming a SiCOH etch stop layer in a copper damascene process is described. A substrate with an exposed metal layer is treated with H2 or NH3 plasma to remove metal oxides. Trimethylsilane is flowed into a chamber with no RF power at about 350° C. to form at least a monolayer on the exposed metal layer. The SiCOH layer is formed by a PECVD process including trimethylsilane and CO2 source gases. Optionally, a composite SiCOH layer comprised of a low compressive stress layer on a high compressive stress layer is formed on the substrate. A conventional damascene sequence is then used to form a second metal layer on the exposed metal layer. Via Rc stability is improved and a lower leakage current is achieved with the trimethylsilane passivation layer. A composite SiCOH etch stop layer provides improved stress migration resistance compared to a single low stress SiCOH layer.

摘要翻译： 描述了在铜镶嵌工艺中形成SiCOH蚀刻停止层的方法。 具有暴露的金属层的衬底用H 2 N 3或NH 3 3等离子体处理以除去金属氧化物。 三甲基硅烷在约350℃下流入没有RF功率的室，以在暴露的金属层上形成至少单层。 SiCOH层通过包括三甲基硅烷和CO 2原子气体的PECVD工艺形成。 任选地，在基底上形成由高压缩应力层上的低压应力层构成的复合SiCOH层。 然后使用常规的镶嵌序列在暴露的金属层上形成第二金属层。 通过Rc稳定性提高，并且用三甲基硅烷钝化层实现较低的漏电流。 与单个低应力SiCOH层相比，复合SiCOH蚀刻停止层提供改进的应力迁移阻力。