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公开(公告)号：US08154003B2
公开(公告)日：2012-04-10
申请号：US11836593
申请日：2007-08-09
Applicant: Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
Inventor： Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
IPC: H01L45/00
CPC classification number: H01L45/12 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1608
Abstract: The present disclosure provides a memory cell. The memory cell includes a first electrode, a variable resistive material layer coupled to the first electrode, a metal oxide layer coupled the variable resistive material layer; and a second electrode coupled to the metal oxide layer. In an embodiment, the metal oxide layer provides a constant resistance.
Abstract translation: 本公开提供了一种存储单元。 存储单元包括第一电极，耦合到第一电极的可变电阻材料层，耦合可变电阻材料层的金属氧化物层; 以及耦合到所述金属氧化物层的第二电极。 在一个实施例中，金属氧化物层提供恒定的电阻。
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公开(公告)号：US09112144B2
公开(公告)日：2015-08-18
申请号：US13415705
申请日：2012-03-08
Applicant: Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
Inventor： Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
CPC classification number: H01L45/12 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1608
Abstract: A method of fabricating a memory cell includes forming a bottom electrode on a substrate, a variable resistive material layer on the bottom electrode, and a top electrode on the variable resistive material layer. A first metal oxide layer interposes the top electrode and the variable resistive material layer. In an embodiment, the first metal oxide layer is a self-formed layer provided by the oxidation of a portion of the top electrode. In an embodiment, a second metal oxide layer is provided interposing the first metal oxide layer and the variable resistive material layer. The second metal oxide may be a self-formed layer formed by the reduction of the variable resistive material layer.
Abstract translation: 制造存储单元的方法包括在基板上形成底电极，在底电极上形成可变电阻材料层，以及在可变电阻材料层上形成顶电极。 第一金属氧化物层插入顶部电极和可变电阻材料层。 在一个实施例中，第一金属氧化物层是由顶部电极的一部分的氧化提供的自形成层。 在一个实施例中，设置第二金属氧化物层，其插入第一金属氧化物层和可变电阻材料层。 第二金属氧化物可以是通过减少可变电阻材料层而形成的自形成层。
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公开(公告)号：US08422781B2
公开(公告)日：2013-04-16
申请号：US12327031
申请日：2008-12-03
Applicant: Jau-Hong Kao , Chih-Yang Lin , Wen-How Wang , Yi-Ta Wu
Inventor： Jau-Hong Kao , Chih-Yang Lin , Wen-How Wang , Yi-Ta Wu
IPC: G06K9/68
CPC classification number: G06K9/6857 , G06K9/00771
Abstract: A method for creating an appearance model of an object includes receiving an image of the object and creating a hierarchical appearance model of the object from the image of the object. The hierarchical appearance model has a plurality of layers, each layer including one or more nodes. Nodes in each layer contain information of the object with a corresponding level of detail. Nodes in different layers of the hierarchical appearance model correspond to different levels of detail.
Abstract translation: 用于创建对象的外观模型的方法包括从对象的图像接收对象的图像并创建对象的分层外观模型。 分级外观模型具有多个层，每个层包括一个或多个节点。 每个层中的节点包含具有相应级别细节的对象的信息。 分层外观模型不同层次的节点对应于不同的详细程度。
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Patent Agency Ranking
公开(公告)号：US09459328B2
公开(公告)日：2016-10-04
申请号：US14521424
申请日：2014-10-22
Applicant: Chih-Yang Lin
Inventor： Chih-Yang Lin
CPC classification number: G01R31/40 , G01R31/041 , G01R31/2848 , G06F1/26
Abstract: An apparatus for simulating a battery is provided. The apparatus includes a power supplying unit, a state regulating unit and an impedance unit. The power supplying unit is coupled to a power terminal of a battery interface and determines whether to provide an operation voltage to the power terminal according to a device voltage provided by the power terminal. The state regulating unit is coupled to the power terminal to provide a impedance regulating signal. The impedance unit is coupled between the power terminal and a ground voltage and is coupled to the state regulating unit to receive the impedance regulating signal. The impedance unit regulates an impedance thereof according to the impedance regulating signal.
Abstract translation: 提供了一种用于模拟电池的装置。 该装置包括供电单元，状态调节单元和阻抗单元。 供电单元耦合到电池接口的电源端子，并根据由电源端子提供的器件电压来确定是否向电源端子提供工作电压。 状态调节单元耦合到电源端子以提供阻抗调节信号。 阻抗单元耦合在电源端子和接地电压之间，并且耦合到状态调节单元以接收阻抗调节信号。 阻抗单元根据阻抗调节信号来调节其阻抗。
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公开(公告)号：US20150115996A1
公开(公告)日：2015-04-30
申请号：US14521424
申请日：2014-10-22
Applicant: Chih-Yang Lin
Inventor： Chih-Yang Lin
IPC: G01R31/40
CPC classification number: G01R31/40 , G01R31/041 , G01R31/2848 , G06F1/26
Abstract: An apparatus for simulating a battery is provided. The apparatus includes a power supplying unit, a state regulating unit and an impedance unit. The power supplying unit is coupled to a power terminal of a battery interface and determines whether to provide an operation voltage to the power terminal according to a device voltage provided by the power terminal. The state regulating unit is coupled to the power terminal to provide a impedance regulating signal. The impedance unit is coupled between the power terminal and a ground voltage and is coupled to the state regulating unit to receive the impedance regulating signal. The impedance unit regulates an impedance thereof according to the impedance regulating signal.
Abstract translation: 提供了一种用于模拟电池的装置。 该装置包括供电单元，状态调节单元和阻抗单元。 供电单元耦合到电池接口的电源端子，并根据由电源端子提供的设备电压确定是否向电源端子提供工作电压。 状态调节单元耦合到电源端子以提供阻抗调节信号。 阻抗单元耦合在电源端子和接地电压之间，并且耦合到状态调节单元以接收阻抗调节信号。 阻抗单元根据阻抗调节信号来调节其阻抗。
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公开(公告)号：US20120178210A1
公开(公告)日：2012-07-12
申请号：US13415705
申请日：2012-03-08
Applicant: Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
Inventor： Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
IPC: H01L21/8239
CPC classification number: H01L45/12 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1608
Abstract: A method of fabricating a memory cell includes forming a bottom electrode on a substrate, a variable resistive material layer on the bottom electrode, and a top electrode on the variable resistive material layer. A first metal oxide layer interposes the top electrode and the variable resistive material layer. In an embodiment, the first metal oxide layer is a self-formed layer provided by the oxidation of a portion of the top electrode. In an embodiment, a second metal oxide layer is provided interposing the first metal oxide layer and the variable resistive material layer. The second metal oxide may be a self-formed layer formed by the reduction of the variable resistive material layer.
Abstract translation: 制造存储单元的方法包括在基板上形成底电极，在底电极上形成可变电阻材料层，以及在可变电阻材料层上形成顶电极。 第一金属氧化物层插入顶部电极和可变电阻材料层。 在一个实施例中，第一金属氧化物层是由顶部电极的一部分的氧化提供的自形成层。 在一个实施例中，设置第二金属氧化物层，其插入第一金属氧化物层和可变电阻材料层。 第二金属氧化物可以是通过减少可变电阻材料层而形成的自形成层。
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公开(公告)号：US20100135530A1
公开(公告)日：2010-06-03
申请号：US12327031
申请日：2008-12-03
Applicant: Jau-Hong KAO , Chih-Yang Lin , Wen-How Wang , Yi-Ta Wu
Inventor： Jau-Hong KAO , Chih-Yang Lin , Wen-How Wang , Yi-Ta Wu
CPC classification number: G06K9/6857 , G06K9/00771
Abstract: A method for creating an appearance model of an object includes receiving an image of the object and creating a hierarchical appearance model of the object from the image of the object. The hierarchical appearance model has a plurality of layers, each layer including one or more nodes. Nodes in each layer contain information of the object with a corresponding level of detail. Nodes in different layers of the hierarchical appearance model correspond to different levels of detail.
Abstract translation: 用于创建对象的外观模型的方法包括从对象的图像接收对象的图像并创建对象的分层外观模型。 分级外观模型具有多个层，每个层包括一个或多个节点。 每个层中的节点包含具有相应级别细节的对象的信息。 分层外观模型不同层次的节点对应于不同的详细程度。
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公开(公告)号：US20090039332A1
公开(公告)日：2009-02-12
申请号：US11836593
申请日：2007-08-09
Applicant: Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
Inventor： Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
IPC: H01L47/00
CPC classification number: H01L45/12 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1608
Abstract: The present disclosure provides a memory cell. The memory cell includes a first electrode, a variable resistive material layer coupled to the first electrode, a metal oxide layer coupled the variable resistive material layer; and a second electrode coupled to the metal oxide layer. In an embodiment, the metal oxide layer provides a constant resistance.
Abstract translation: 本公开提供了一种存储单元。 存储单元包括第一电极，耦合到第一电极的可变电阻材料层，耦合可变电阻材料层的金属氧化物层; 以及耦合到所述金属氧化物层的第二电极。 在一个实施例中，金属氧化物层提供恒定的电阻。
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