公开(公告)号：US06800510B2

公开(公告)日：2004-10-05

申请号：US10289470

申请日：2002-11-06

申请人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

发明人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC分类号： H01L2100

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

摘要： A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.

摘要翻译： 提供了一种控制TFT-LCD存储电容器的电容的方法。 TFT的栅介质层由氮化硅层，电介质层和氮化硅层组成，非晶硅层在电介质层上的蚀刻选择性不小于约5.0。 因此，当蚀刻掺杂的和未掺杂的非晶硅层以形成源极/漏极堆叠层时或者蚀刻导电层以在栅极介电层上形成栅极时，介电层可以是蚀刻停止层。 因此，可以控制介电层厚度; 从而可以控制存储电容器的电容。

公开(公告)号：US06953715B2

公开(公告)日：2005-10-11

申请号：US10934014

申请日：2004-09-03

申请人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

发明人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L21/00

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

摘要： A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.

公开(公告)号：US07087469B2

公开(公告)日：2006-08-08

申请号：US10934242

申请日：2004-09-03

申请人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

发明人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC分类号： H01L21/00

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

摘要： A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.

摘要翻译： 公开了一种控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法。 在某些实施例中，该方法包括：i）在透明基底上形成硅岛和底部电极，硅岛具有位于中心部分上的未掺杂区域，以及分别位于两侧的两个掺杂区域，ii）形成第一 氮化硅层，以及iii）在所述硅岛的未掺杂区域上形成包括第二氮化硅层和导电层的堆叠层，并且所述层叠层的第一导电层用作薄的栅极 薄膜晶体管，其中导电层在电介质层上的蚀刻选择率不小于约5.0。

公开(公告)号：US07145172B2

公开(公告)日：2006-12-05

申请号：US10932828

申请日：2004-09-02

申请人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

发明人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC分类号： H01L31/0376 ,  H01L21/00

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

摘要： A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when doped and undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled, and thereby the capacitance of the storage capacitor can be controlled.

摘要翻译： 提供薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管阵列基板。 TFT的栅介质层包括氮化硅层，电介质层和氮化硅层，并且非晶硅层在电介质层上的蚀刻选择性不小于约5.0。 因此，当掺杂和非掺杂非晶硅层被蚀刻以形成源极/漏极堆叠层时，介电层可以是蚀刻停止层，或蚀刻导电层以在栅极介电层上形成栅极。 因此，可以控制介电层厚度，从而可以控制存储电容器的电容。

公开(公告)号：US20050037533A1

公开(公告)日：2005-02-17

申请号：US10934014

申请日：2004-09-03

申请人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

发明人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L21/00

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

摘要： A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.

摘要翻译： 公开了一种控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法。 在某些实施例中，该方法包括：i）在氮化硅层上形成未掺杂的非晶硅层，ii）在未掺杂的非晶硅层上形成蚀刻掩模，以及iii）在未掺杂的非晶硅的部分上形成两个掺杂非晶硅层 层和蚀刻掩模，两个掺杂的非晶硅层间隔开并位于栅极的任一侧，其中在电介质层上的未掺杂和掺杂的非晶硅层的蚀刻选择率不小于约5.0。

公开(公告)号：US20050032263A1

公开(公告)日：2005-02-10

申请号：US10934242

申请日：2004-09-03

申请人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

发明人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L21/00

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

摘要： A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.

摘要翻译： 公开了一种控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法。 在某些实施例中，该方法包括：i）在透明基底上形成硅岛和底部电极，硅岛具有位于中心部分上的未掺杂区域，以及分别位于两侧的两个掺杂区域，ii）形成第一 氮化硅层，以及iii）在所述硅岛的未掺杂区域上形成包括第二氮化硅层和导电层的堆叠层，并且所述层叠层的第一导电层用作薄的栅极 薄膜晶体管，其中导电层在电介质层上的蚀刻选择率不小于约5.0。

公开(公告)号：US20050023533A1

公开(公告)日：2005-02-03

申请号：US10932828

申请日：2004-09-02

申请人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

发明人： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L29/04

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

摘要： A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when doped and undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled, and thereby the capacitance of the storage capacitor can be controlled.

摘要翻译： 提供薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管阵列基板。 TFT的栅介质层包括氮化硅层，电介质层和氮化硅层，并且非晶硅层在电介质层上的蚀刻选择性不小于约5.0。 因此，当掺杂和非掺杂非晶硅层被蚀刻以形成源极/漏极堆叠层时，介电层可以是蚀刻停止层，或蚀刻导电层以在栅极介电层上形成栅极。 因此，可以控制介电层厚度，从而可以控制存储电容器的电容。

公开(公告)号：US09115310B2

公开(公告)日：2015-08-25

申请号：US13470651

申请日：2012-05-14

申请人： Yao-Tsung Chuang ,  Jen-Shrong Uen ,  Chih-Lung Lin

发明人： Yao-Tsung Chuang ,  Jen-Shrong Uen ,  Chih-Lung Lin

IPC分类号： H01J1/63 ,  C09K11/78 ,  C09K11/80 ,  C09K11/77 ,  H01L33/50

CPC分类号： C09K11/7774 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A fluorescent material and a light emitting device using the same are provided. The fluorescent material has a general formula of ((LumA1-m)zCe1-z)3Q5O12, wherein 0

摘要翻译： 提供荧光材料和使用其的发光装置。 荧光材料具有通式（（LumA1-m）zCe1-z）3Q5O12，其中0

公开(公告)号：US08494052B2

公开(公告)日：2013-07-23

申请号：US11400051

申请日：2006-04-07

申请人： Cheng Chang ,  Chih-Lung Lin ,  Thomas W. Holcomb

发明人： Cheng Chang ,  Chih-Lung Lin ,  Thomas W. Holcomb

IPC分类号： H04N11/02

CPC分类号： H04N19/192 ,  H04N19/51

摘要： Techniques and tools for selecting search ranges and/or motion vector ranges during motion estimation are described. For example, a video encoder performs motion estimation constrained by a first search range, which results in multiple motion vectors. The encoder computes motion vector distribution information for the motion vectors. To compute the distribution information, the encoder can track the motion vectors in a histogram and count how many of the motion vectors fall within each of multiple intervals for the distribution information. The encoder then selects a second search range and performs motion estimation constrained by the second search range. Selecting the second search range can include selecting a motion vector range, which in some cases in effect determines the second search range.

摘要翻译： 描述了在运动估计期间选择搜索范围和/或运动矢量范围的技术和工具。 例如，视频编码器执行由第一搜索范围约束的运动估计，其导致多个运动矢量。 编码器计算运动矢量的运动矢量分布信息。 为了计算分布信息，编码器可以跟踪直方图中的运动矢量，并计算多少个运动矢量落在分布信息的多个间隔的每一个中。 然后，编码器选择第二搜索范围并执行受第二搜索范围约束的运动估计。 选择第二搜索范围可以包括选择运动矢量范围，其在某些情况下有效地确定第二搜索范围。

公开(公告)号：US20130010861A1

公开(公告)日：2013-01-10

申请号：US13614453

申请日：2012-09-13

申请人： Chih-Lung Lin ,  Minghui Xia ,  Pohsiang Hsu ,  Shankar Regunathan ,  Thomas W. Holcomb

发明人： Chih-Lung Lin ,  Minghui Xia ,  Pohsiang Hsu ,  Shankar Regunathan ,  Thomas W. Holcomb

IPC分类号： H04N7/32 ,  H04N7/26

CPC分类号： H04N19/89 ,  H04N19/103 ,  H04N19/124 ,  H04N19/166 ,  H04N19/172 ,  H04N19/188 ,  H04N19/46 ,  H04N19/573 ,  H04N19/61 ,  H04N19/91

摘要： Various new and non-obvious apparatus and methods for using frame caching to improve packet loss recovery are disclosed. One of the disclosed embodiments is a method for using periodical and synchronized frame caching within an encoder and its corresponding decoder. When the decoder discovers packet loss, it informs the encoder which then generates a frame based on one of the shared frames stored at both the encoder and the decoder. When the decoder receives this generated frame it can decode it using its locally cached frame.

摘要翻译： 公开了使用帧缓存来改善丢包恢复的各种新的和不明显的装置和方法。 所公开的实施例之一是用于在编码器及其对应的解码器内使用周期性和同步帧缓存的方法。 当解码器发现分组丢失时，它通知编码器，然后编码器基于存储在编码器和解码器的共享帧之一来生成帧。 当解码器接收到该生成的帧时，它可以使用其本地缓存的帧进行解码。