-
公开(公告)号：US20080227288A1
公开(公告)日：2008-09-18
申请号：US11724284
申请日：2007-03-15
申请人： Po-Zen Chen , Tzu-Chan Weng , Chien-Chung Chen
发明人： Po-Zen Chen , Tzu-Chan Weng , Chien-Chung Chen
IPC分类号： H01L21/4763 , H01L21/311
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/31138 , H01L21/76811
摘要： A dual damascene process. A first photoresist layer with a first opening corresponding to a trench pattern is formed on a dielectric layer. A second photoresist layer with a second opening corresponding to a via pattern smaller then the trench pattern is formed on the first photoresist layer and extends to a portion of the dielectric layer. The second photoresist layer has a material character different from the first photoresist layer. A via etching process using the second photoresist as a mask is performed to form a via hole passing through the dielectric layer. A photoresist ashing process is performed to remove the second photoresist layer. A trench etching process using the first photoresist layer as a mask is performed to form a trench in the upper portion of the dielectric layer. The via etching process, the photoresist ashing process and the trench etching process are performed as a continuous process in one chamber.
摘要翻译： 双镶嵌工艺。 在电介质层上形成具有对应于沟槽图案的第一开口的第一光致抗蚀剂层。 在第一光致抗蚀剂层上形成具有对应于小于沟槽图案的通孔图案的第二开口的第二光致抗蚀剂层并且延伸到介电层的一部分。 第二光致抗蚀剂层具有与第一光致抗蚀剂层不同的材料特性。 执行使用第二光致抗蚀剂作为掩模的通孔蚀刻工艺，以形成穿过介电层的通孔。 进行光致抗蚀剂灰化处理以去除第二光致抗蚀剂层。 执行使用第一光致抗蚀剂层作为掩模的沟槽蚀刻工艺，以在电介质层的上部形成沟槽。 通孔蚀刻工艺，光致抗蚀剂灰化处理和沟槽蚀刻工艺在一个室中作为连续工艺进行。
-
公开(公告)号：US20100240220A1
公开(公告)日：2010-09-23
申请号：US12721961
申请日：2010-03-11
申请人： Yi-Wei CHIU , Yih Song CHIU , Tzu Chan WENG , Jeng Chang HER
发明人： Yi-Wei CHIU , Yih Song CHIU , Tzu Chan WENG , Jeng Chang HER
IPC分类号： H01L21/3065
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76814 , H01L24/03 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01059 , H01L2924/01074 , H01L2924/10329 , H01L2924/14 , H01L2924/19041
摘要： A process of stripping a patterned photoresist layer and removing a dielectric liner includes performing an oxygen-containing plasma dry etch process and performing a fluorine-containing plasma dry etch process in the same reaction chamber at a process temperature less than 120° C.
摘要翻译： 剥离图案化的光致抗蚀剂层并去除介电衬垫的工艺包括执行含氧等离子体干蚀刻工艺，并且在相同的反应室中在低于120℃的工艺温度下进行含氟等离子体干蚀刻工艺。
-
公开(公告)号：US07563719B2
公开(公告)日：2009-07-21
申请号：US11724284
申请日：2007-03-15
申请人： Po-Zen Chen , Tzu-Chan Weng , Chien-Chung Chen
发明人： Po-Zen Chen , Tzu-Chan Weng , Chien-Chung Chen
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/31138 , H01L21/76811
摘要： A dual damascene process. A first photoresist layer with a first opening corresponding to a trench pattern is formed on a dielectric layer. A second photoresist layer with a second opening corresponding to a via pattern smaller then the trench pattern is formed on the first photoresist layer and extends to a portion of the dielectric layer. The second photoresist layer has a material character different from the first photoresist layer. A via etching process using the second photoresist as a mask is performed to form a via hole passing through the dielectric layer. A photoresist ashing process is performed to remove the second photoresist layer. A trench etching process using the first photoresist layer as a mask is performed to form a trench in the upper portion of the dielectric layer. The via etching process, the photoresist ashing process and the trench etching process are performed as a continuous process in one chamber.
摘要翻译： 双镶嵌工艺。 在电介质层上形成具有对应于沟槽图案的第一开口的第一光致抗蚀剂层。 在第一光致抗蚀剂层上形成具有对应于小于沟槽图案的通孔图案的第二开口的第二光致抗蚀剂层并且延伸到介电层的一部分。 第二光致抗蚀剂层具有与第一光致抗蚀剂层不同的材料特性。 执行使用第二光致抗蚀剂作为掩模的通孔蚀刻工艺，以形成穿过介电层的通孔。 进行光致抗蚀剂灰化处理以去除第二光致抗蚀剂层。 执行使用第一光致抗蚀剂层作为掩模的沟槽蚀刻工艺，以在电介质层的上部形成沟槽。 通孔蚀刻工艺，光致抗蚀剂灰化处理和沟槽蚀刻工艺在一个室中作为连续工艺进行。
-
公开(公告)号：US08049213B2
公开(公告)日：2011-11-01
申请号：US11958942
申请日：2007-12-18
申请人： Ching-Chung Su , Yi-Wei Chiu , Tzu Chan Weng , Yih Song Chiu , Pin Chia Su , Chih-Cherng Jeng , Kuo-Hsiu Wei
发明人： Ching-Chung Su , Yi-Wei Chiu , Tzu Chan Weng , Yih Song Chiu , Pin Chia Su , Chih-Cherng Jeng , Kuo-Hsiu Wei
IPC分类号： H01L21/66 , H01L23/544
摘要： A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.
摘要翻译： 测量尺寸特性的方法包括提供衬底并在衬底上形成反射层。 然后在反射层上形成电介质层。 电介质层包括在透明区域内插入的光栅图案和电阻率测试线。 然后将辐射引导到电介质层上，使得一些辐射透过透明区域到达反射层。 然后从由金属光栅图案反射和散射的辐射中检测出辐射图。 分析辐射图以确定第一维信息。 然后测量电阻率测试线的电阻，并分析该电阻以确定第二维信息。 然后比较第一和第二维信息。
-
公开(公告)号：US20090152545A1
公开(公告)日：2009-06-18
申请号：US11958942
申请日：2007-12-18
申请人： Ching-Chung Su , Yi-Wei Chiu , Tzu-Chan Weng , Yih Song Chiu , Pin Chia Su , Chih-Cherng Jeng , Kuo-Hsiu Wei
发明人： Ching-Chung Su , Yi-Wei Chiu , Tzu-Chan Weng , Yih Song Chiu , Pin Chia Su , Chih-Cherng Jeng , Kuo-Hsiu Wei
摘要： A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.
摘要翻译： 测量尺寸特性的方法包括提供衬底并在衬底上形成反射层。 然后在反射层上形成电介质层。 电介质层包括在透明区域内插入的光栅图案和电阻率测试线。 然后将辐射引导到电介质层上，使得一些辐射透过透明区域到达反射层。 然后从由金属光栅图案反射和散射的辐射中检测出辐射图。 分析辐射图以确定第一维信息。 然后测量电阻率测试线的电阻，并分析该电阻以确定第二维信息。 然后比较第一和第二维信息。
-
-
-
-
搜索结果
5 条记录 (耗时 0.022 秒)
