公开(公告)号：US06511609B2

公开(公告)日：2003-01-28

申请号：US09785170

申请日：2001-02-20

申请人： Ching-Han Jan ,  Fon-Shan Huang ,  Jih-Wen Wang

发明人： Ching-Han Jan ,  Fon-Shan Huang ,  Jih-Wen Wang

IPC分类号： H01L2100

CPC分类号： H01L21/76864 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873

摘要： A novel method of Cu seed layer deposition for ULSI metalization is disclosed. The method of Cu seed layer deposition for ULSI metalization comprises forming a diffusion barrier on a substrate, forming a poly silicon layer, amorphous silicon layer or TaSix layer on said diffusion barrier, replacing said poly silicon layer with copper to form a copper seed layer, and electroplating a thick copper film on said copper seed layer. In this invention, a chemical replacing solution comprising a replacing reactant and at least one etchant is used to replace the poly silicon layer with copper and to reduce the quantity of byproducts of the reaction.

公开(公告)号：US20100109053A1

公开(公告)日：2010-05-06

申请号：US12264272

申请日：2008-11-04

申请人： Ching-Han Jan ,  Yu-Hsin Lin

发明人： Ching-Han Jan ,  Yu-Hsin Lin

IPC分类号： H01L23/62 ,  H01L21/66

CPC分类号： H01L23/60 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/4813 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2224/45099 ,  H01L2924/00

摘要： The present invention discloses a semiconductor device. The semiconductor device includes an integrated circuit and a connecting component. The integrated circuit includes a first pad; a second pad; a first current guiding circuit, coupled to the first pad and a first reference voltage, for selectively guiding a first specific electrical signal received from the first pad to the first reference voltage; and a second current guiding circuit, coupled to the second pad and a second reference voltage, for selectively guiding a second specific electrical signal received from the second pad to the second reference voltage; and the connecting component is external to the integrated circuit for coupling the first pad and the second pad.

摘要翻译： 本发明公开了一种半导体器件。 半导体器件包括集成电路和连接部件。 集成电路包括第一焊盘; 第二垫 第一电流引导电路，耦合到第一焊盘和第一参考电压，用于选择性地将从第一焊盘接收的第一特定电信号引导到第一参考电压; 以及耦合到所述第二焊盘和第二参考电压的第二电流引导电路，用于选择性地将从所述第二焊盘接收的第二特定电信号引导到所述第二参考电压; 并且所述连接部件在所述集成电路的外部用于联接所述第一焊盘和所述第二焊盘。