PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE
    1.
    发明申请
    PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE 审中-公开
    生产含有纯银内电极的多层芯片氧化锌磁体的方法和超导温度

    公开(公告)号:US20120135563A1

    公开(公告)日:2012-05-31

    申请号:US13298458

    申请日:2011-11-17

    CPC classification number: H01C7/112 H01C7/18

    Abstract: A low-temperature firing process is available for cost saving to produce a multilayer chip ZnO varistor containing pure silver (Ag) formed as internal electrodes and calcined at ultralow firing temperature of 850-900° C., which process comprises: a) individually preparing ZnO grains in advance doped with doping ions for promotion of semi-conductivity of ZnO grains if calcined; b) individually preparing a desired high-impedance sintering material to be fired as grain boundaries to encapsulate ZnO grains; c) mixing the doped ZnO grains of Step a) with the high-impedance sintering material of Step b) in a predetermined ratio to form a mixture and proceeding with an initial sintering to have the mixture sintered and ground as composite ZnO ceramic powders, and d) processing the sintered mixture of Step c) to make multilayer chip ZnO varistors containing pure silver (Ag) internal electrodes but sintered at ultralow firing temperature of 850-900° C.

    Abstract translation: 低成本焙烧工艺可以节约成本,生产出一种含有形成内部电极的纯银(Ag)的多层芯片ZnO压敏电阻,并在850-900℃的超低烧结温度下煅烧,该方法包括:a)单独制备 预先掺杂掺杂离子的ZnO晶粒,如果煅烧,则促进ZnO晶粒的半导电性; b)单独制备待烧结的期望的高阻抗烧结材料作为晶界以包封ZnO颗粒; c)将步骤a)的掺杂ZnO晶粒与步骤b)的高阻抗烧结材料以预定比例混合,形成混合物,并进行初始烧结,将混合物烧结并研磨为复合ZnO陶瓷粉末; d)加工步骤c)的烧结混合物以制备含有纯银(Ag)内部电极但在850-900℃的超低烧结温度下烧结的多层片状ZnO压敏电阻

    STRUCTURE OF MULTILAYER CERAMIC DEVICE
    3.
    发明申请
    STRUCTURE OF MULTILAYER CERAMIC DEVICE 失效
    多层陶瓷器件的结构

    公开(公告)号:US20120208040A1

    公开(公告)日:2012-08-16

    申请号:US13024470

    申请日:2011-02-10

    CPC classification number: H01G4/005 H01G4/30 Y10T428/12056

    Abstract: A multilayer ceramic device comprises a laminated ceramic body having opposite end surfaces, a pair of conductive electrodes each respectively attached to one end surface of the laminated ceramic body and a plurality of alternately staggered internal electrodes within the laminated ceramic body configured in an alternating manner and each electrically connected to the corresponding conductive electrodes respectively; each conductive electrodes of the multilayer ceramic device is further covered with a solder paste layer so that the multilayer ceramic device is thus made without any plating step and no need of treating waste liquid nickel or waste liquid tin as well as no problem of environmental pollution caused by plating solution, thereby lowering manufacturing costs and reducing processing time.

    Abstract translation: 多层陶瓷器件包括具有相对端面的层叠陶瓷体,分别安装在层叠陶瓷体的一个端面上的一对导电电极和层叠陶瓷体内的多个交错交错的内部电极,其以交替的方式配置和 各自电连接到相应的导电电极; 多层陶瓷器件的每个导电电极进一步用焊膏层覆盖,使得多层陶瓷器件因此不经任何电镀步骤而制成,并且不需要处理废液镍或废液锡,并且没有引起环境污染的问题 通过电镀液,降低制造成本,缩短加工时间。

    ZINC-OXIDE SURGE ARRESTER FOR HIGH-TEMPERATURE OPERATION
    5.
    发明申请
    ZINC-OXIDE SURGE ARRESTER FOR HIGH-TEMPERATURE OPERATION 有权
    用于高温操作的氧化锌冲击回收器

    公开(公告)号:US20120057265A1

    公开(公告)日:2012-03-08

    申请号:US13023624

    申请日:2011-02-09

    CPC classification number: H01C7/112 H01C7/10 H01C7/12

    Abstract: A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.

    Abstract translation: 用于高温操作的ZnO避雷器的特征在于,其ZnO晶粒之间的晶界层包含基于BaTiO 3的正温度系数热敏电阻材料,其在整个晶界层中占据10-85mol%,并且当工作温度 升温时,晶界层中的正温度系数热敏电阻材料的电阻随着升温而急剧上升,从而补偿或部分补偿由升温引起的晶界层中的组分的电阻降低,从而使电阻 的ZnO避雷器中的晶界层更加独立于温度。 因此,ZnO避雷器适用于最高工作温度高于125℃或甚至高于150℃的操作。

    METHOD OF CREDIT CARD TRANSACTION AUTHORIZATION USING VOIPOW TECHNIQUE
    6.
    发明申请
    METHOD OF CREDIT CARD TRANSACTION AUTHORIZATION USING VOIPOW TECHNIQUE 审中-公开
    信用卡交易授权使用VOIPOW技术的方法

    公开(公告)号:US20110276488A1

    公开(公告)日:2011-11-10

    申请号:US13094971

    申请日:2011-04-27

    Inventor: Ching-Hohn LIEN

    CPC classification number: G06Q20/00 G06Q20/40

    Abstract: A method of credit card transaction authorization using VoIPoW phone is provided to efficiently and economically perform authorization by both recognizing a credit card and identifying a holder of the credit card, which key feature of the method is that the VoIPoW phone is independent of environmental barriers, time as well as space limitations and communication costs, and a real-time intercommunication between a card holder and a relevant card issuing bank through VoIPoW phone can be performed to effectively preclude credit card fraud.

    Abstract translation: 提供使用VoIPoW电话的信用卡交易授权的方法,通过识别信用卡和识别信用卡的持有者来有效和经济地执行授权,该方法的关键特征是VoIPoW电话独立于环境屏障, 时间以及空间限制和通信成本,并且可以执行通过VoIPoW电话的持卡人和相关的发卡银行之间的实时互通,以有效地排除信用卡欺诈。

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