公开(公告)号：US20140291613A1

公开(公告)日：2014-10-02

申请号：US13851953

申请日：2013-03-27

申请人： Ching-Liang Lin ,  Shen-Jie Wang ,  Yen-Lin Lai

发明人： Ching-Liang Lin ,  Shen-Jie Wang ,  Yen-Lin Lai

IPC分类号： H01L29/15 ,  H01L29/205 ,  H01L29/06

CPC分类号： H01L29/155 ,  H01L29/2003 ,  H01L33/06

摘要： A multiple quantum well structure including a plurality of well-barrier pairs arranged along a direction is provided. Each of the well-barrier pairs includes a barrier layer and a well layer adjacent to the barrier layer. The barrier layers and the well layers of the well-barrier pairs are disposed alternately. A ratio of a thickness of the well layer in the direction to a thickness of the barrier layer in the direction in each well-barrier pair is a well-barrier thickness ratio, and the well-barrier thickness ratios of a part of the well-barrier pairs gradually increase along the direction.

摘要翻译： 提供了包括沿着一个方向布置的多个阱 - 屏障对的多量子阱结构。 每个阱屏障对包括阻挡层和邻近阻挡层的阱层。 阱屏障对的阻挡层和阱层交替设置。 阱层的厚度在阻挡层的厚度方向上的阻挡层厚度比为良好的阻挡层厚度比，阱壁的厚度比， 屏障对沿着方向逐渐增加。

公开(公告)号：US08766307B2

公开(公告)日：2014-07-01

申请号：US13778161

申请日：2013-02-27

申请人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

发明人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L2933/0091

摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

摘要翻译： 发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。 钝化结构设置在外延衬底上并具有外表面。 空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。 半导体层设置在外延衬底上并封装钝化结构和空隙。 第一类掺杂半导体层设置在半导体层上。 发光层设置在第一型掺杂半导体层上。 第二种掺杂半导体层设置在发光层上。

公开(公告)号：US20130277697A1

公开(公告)日：2013-10-24

申请号：US13778161

申请日：2013-02-27

申请人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

发明人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L2933/0091

摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

摘要翻译： 发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。 钝化结构设置在外延衬底上并具有外表面。 空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。 半导体层设置在外延衬底上并封装钝化结构和空隙。 第一类掺杂半导体层设置在半导体层上。 发光层设置在第一型掺杂半导体层上。 第二种掺杂半导体层设置在发光层上。