PHOTOELECTRONIC ELEMENT HAVING A TRANSPARENT ADHESION STRUCTURE AND THE MANUFACTURING METHOD THEREOF
    1.
    发明申请
    PHOTOELECTRONIC ELEMENT HAVING A TRANSPARENT ADHESION STRUCTURE AND THE MANUFACTURING METHOD THEREOF 审中-公开
    具有透明粘合结构的光电元件及其制造方法

    公开(公告)号:US20100252103A1

    公开(公告)日:2010-10-07

    申请号:US12753589

    申请日:2010-04-02

    Abstract: A photoelectronic element having a transparent adhesion structure includes a supporting substrate; a first transparent adhesion layer formed on the supporting substrate; a second transparent adhesion layer formed on the first transparent adhesion layer; and a first semiconductor stack layer formed on the second transparent adhesion layer wherein the first semiconductor stack layer includes a first active layer; wherein the interface between the first transparent adhesion layer and the second transparent adhesion layer contains hydrogen-oxygen bond after being treated by an activator.

    Abstract translation: 具有透明粘合结构的光电子元件包括支撑基板; 形成在所述支撑基板上的第一透明粘合层; 形成在第一透明粘合层上的第二透明粘合层; 以及形成在所述第二透明粘合层上的第一半导体堆叠层,其中所述第一半导体堆叠层包括第一有源层; 其中所述第一透明粘合层和所述第二透明粘合层之间的界面在通过活化剂处理之后包含氢 - 氧键。

    OPTOELECTRONIC DEVICE
    2.
    发明申请
    OPTOELECTRONIC DEVICE 审中-公开
    光电器件

    公开(公告)号:US20100127635A1

    公开(公告)日:2010-05-27

    申请号:US12626792

    申请日:2009-11-27

    Applicant: Chiu-Lin YAO

    Inventor: Chiu-Lin YAO

    CPC classification number: H01L33/382 H01L33/20

    Abstract: An optoelectronic device is provided and includes a substrate, a p-type cladding layer, an active layer and a conductive light extraction unit. The conductive light extraction unit includes an n- type cladding layer above the active layer, a metal layer above the n-type cladding layer and a plurality of holes passing through the metal layer and the n-type cladding layer. Sizes of the plurality of holes are not the same and/or the holes are arranged irregularly.

    Abstract translation: 提供了一种光电子器件,包括衬底,p型覆层,有源层和导电光提取单元。 导电光提取单元包括在有源层上方的n型包覆层,n型包层上方的金属层和穿过金属层和n型包覆层的多个孔。 多个孔的尺寸不相同和/或孔不规则地排列。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20120007135A1

    公开(公告)日:2012-01-12

    申请号:US13235963

    申请日:2011-09-19

    Abstract: An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

    Abstract translation: 提供了示例性的半导体器件。 半导体器件包括半导体堆叠层和导电结构。 导电结构位于半导体堆叠层上。 导电结构包括底部和在其相对侧上的顶部。 底部与半导体堆叠层接触。 顶部的顶部宽度与底部的底部宽度之比小于0.7。 导电结构可以是导电点结构或导线结构。

    PHOTOELECTRONIC ELEMENT AND THE MANUFACTURING METHOD THEREOF
    4.
    发明申请
    PHOTOELECTRONIC ELEMENT AND THE MANUFACTURING METHOD THEREOF 有权
    光电元件及其制造方法

    公开(公告)号:US20100244077A1

    公开(公告)日:2010-09-30

    申请号:US12751642

    申请日:2010-03-31

    Applicant: Chiu-Lin YAO

    Inventor: Chiu-Lin YAO

    Abstract: A photoelectronic element includes a composite substrate including an electrically insulative substrate having a chamber; an intermediate layer; and an electrically conductive substrate; a bonding layer including an electrically conductive region and an electrically insulative region; a first current spreading layer; a first semiconductor stacked layer including a first semiconductor layer, an active layer, and a second semiconductor layer; a current blocking layer; a second current spreading layer; and a first electrode.

    Abstract translation: 光电元件包括​​:复合衬底,其包括具有腔室的电绝缘衬底; 中间层 和导电基板; 包括导电区域和电绝缘区域的接合层; 第一电流扩散层; 包括第一半导体层,有源层和第二半导体层的第一半导体层叠层; 电流阻挡层; 第二电流扩散层; 和第一电极。

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