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1.发明授权Method using block copolymers and a hard electroplated mask for making a master disk for nanoimprinting patterned magnetic recording disks 失效使用嵌段共聚物和硬电镀掩模的方法制造用于纳米压印图案化磁记录盘的母盘公开(公告)号：US08512583B2
公开(公告)日：2013-08-20
申请号：US13236484
申请日：2011-09-19
IPC分类号： B44C1/22
摘要： A method for making a master disk to be used in the nanoimprinting process to make patterned-media disks uses an electrically conductive substrate and guided self-assembly of a block copolymer to form patterns of generally radial lines and/or generally concentric rings of one of the block copolymer components. A metal is electroplated onto the substrate in the regions not protected by the lines and/or rings. After removal of the block copolymer component, the remaining metal pattern is used as an etch mask to fabricate either the final master disk or two separate molds that are then used to fabricate the master disk.
摘要翻译： 一种用于在纳米压印过程中制造母盘以使图案化介质盘使用导电基底并引导嵌段共聚物的自组装以形成大体径向线和/或大致同心环的图案的方法 嵌段共聚物组分。 在不受线路和/或环保护的区域中，将金属电镀到衬底上。 在除去嵌段共聚物组分之后，剩余的金属图案用作蚀刻掩模以制造最终的母盘或两个单独的模具，然后用于制造母盘。
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2.发明申请METHOD USING BLOCK COPOLYMERS AND A HARD ELECTROPLATED MASK FOR MAKING A MASTER DISK FOR NANOIMPRINTING PATTERNED MAGNETIC RECORDING DISKS 失效使用块状共聚物的方法和用于制备用于印制图形磁记录盘的主磁盘的硬电极掩模公开(公告)号：US20130068719A1
公开(公告)日：2013-03-21
申请号：US13236484
申请日：2011-09-19
摘要： A method for making a master disk to be used in the nanoimprinting process to make patterned-media disks uses an electrically conductive substrate and guided self-assembly of a block copolymer to form patterns of generally radial lines and/or generally concentric rings of one of the block copolymer components. A metal is electroplated onto the substrate in the regions not protected by the lines and/or rings. After removal of the block copolymer component, the remaining metal pattern is used as an etch mask to fabricate either the final master disk or two separate molds that are then used to fabricate the master disk.
摘要翻译： 一种用于在纳米压印过程中制造母盘以使图案化介质盘使用导电基底并引导嵌段共聚物的自组装以形成大体径向线和/或大致同心环的图案的方法 嵌段共聚物组分。 在不受线路和/或环保护的区域中，将金属电镀到衬底上。 在除去嵌段共聚物组分之后，剩余的金属图案用作蚀刻掩模以制造最终的母盘或两个单独的模具，然后用于制造母盘。
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3.发明申请SYSTEM, METHOD AND APPARATUS FOR SEEDLESS ELECTROPLATED STRUCTURE ON A SEMICONDUCTOR SUBSTRATE 有权半导体基板上无缝电镀结构的系统，方法和装置公开(公告)号：US20130154020A1
公开(公告)日：2013-06-20
申请号：US13328218
申请日：2011-12-16
IPC分类号： H01L27/092 , H01L21/28
CPC分类号： H01L21/28052 , H01L21/823814 , H01L21/823828 , H01L29/665 , H01L29/78
摘要： An integrated circuit has a doped silicon semiconductor with regions of insulators and bare silicon. The bare silicon regions are isolated from other bare silicon regions. A semiconductor device on the doped silicon semiconductor has at least two electrical connections to form regions of patterned metal. A metal is electroplated directly on each of the regions of patterned metal to form plated connections without a seed layer. A self-aligned silicide is located under each plated connection, formed by annealing, for the regions of plated metal on bare silicon.
摘要翻译： 集成电路具有具有绝缘体和裸硅区域的掺杂硅半导体。 裸硅区域与其他裸硅区域隔离。 掺杂硅半导体上的半导体器件具有至少两个电连接以形成图案化金属的区域。 将金属直接电镀在图案化金属的每个区域上，以形成没有种子层的电镀连接。 自对准硅化物位于通过退火形成的每个电镀连接处，用于裸硅上的电镀金属区域。
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4.发明授权System, method and apparatus for seedless electroplated structure on a semiconductor substrate 有权半导体衬底上无电解电镀结构的系统，方法和装置公开(公告)号：US09236260B2
公开(公告)日：2016-01-12
申请号：US13328218
申请日：2011-12-16
IPC分类号： H01L21/70 , H01L21/28 , H01L29/66 , H01L29/78 , H01L21/8238
CPC分类号： H01L21/28052 , H01L21/823814 , H01L21/823828 , H01L29/665 , H01L29/78
摘要： An integrated circuit has a doped silicon semiconductor with regions of insulators and bare silicon. The bare silicon regions are isolated from other bare silicon regions. A semiconductor device on the doped silicon semiconductor has at least two electrical connections to form regions of patterned metal. A metal is electroplated directly on each of the regions of patterned metal to form plated connections without a seed layer. A self-aligned silicide is located under each plated connection, formed by annealing, for the regions of plated metal on bare silicon.
摘要翻译： 集成电路具有具有绝缘体和裸硅区域的掺杂硅半导体。 裸硅区域与其他裸硅区域隔离。 掺杂硅半导体上的半导体器件具有至少两个电连接以形成图案化金属的区域。 将金属直接电镀在图案化金属的每个区域上，以形成没有种子层的电镀连接。 自对准硅化物位于通过退火形成的每个电镀连接处，用于裸硅上的电镀金属区域。
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