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公开(公告)号：US06660437B2
公开(公告)日：2003-12-09
申请号：US10158733
申请日：2002-05-30
申请人： Christoph Friedrich , Uwe Griesinger , Michael Heissmeier , Burkhard Ludwig , Molela Moukara , Rainer Pforr
发明人： Christoph Friedrich , Uwe Griesinger , Michael Heissmeier , Burkhard Ludwig , Molela Moukara , Rainer Pforr
IPC分类号： G03F900
CPC分类号： G03F1/30
摘要： An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±&Dgr; &agr;, whereby &Dgr; &agr; a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.
摘要翻译： 描述具有包含两个不透明段的分支结构的交替相位掩模。 两个透明表面片分别设置在片段的两侧或其部件上。 表面段设置有被偏移180°±Δα的相位，由此Δaa不大于25°。 表面段由相位位于相邻表面段的相位之间的至少一个透明表面边界段分开。
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公开(公告)号：US07354683B2
公开(公告)日：2008-04-08
申请号：US10928759
申请日：2004-08-27
申请人： Molela Moukara , Burkhard Ludwig , Jörg Thiele , Marco Ahrens , Roderick Köhle , Rainer Pforr , Nicolo Morgana
发明人： Molela Moukara , Burkhard Ludwig , Jörg Thiele , Marco Ahrens , Roderick Köhle , Rainer Pforr , Nicolo Morgana
IPC分类号： G03F1/00
CPC分类号： G03F7/70441 , G03F1/30 , G03F1/36 , G03F7/70466
摘要： A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (α). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (α). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.
摘要翻译： 光刻掩模具有由第一不透明部分（O 1）和第二不透明部分（O 2）形成的成角度的结构元件（O）。 结构元件具有至少一个反射角（α）。 倾斜结构元件（O）包括面向反射角（α）的至少一个凸部（A）。 与成角度的结构元件（O）相邻的至少一个透明结构（T）设置在倾斜结构元件（O）的凸部（A）处。 透明结构（T）以分开的方式形成在成角度的结构元件（O）的凸部（A）处，并且因此包括两个可区分的透明段（T 1，T 2），其至少形成在主要轴向对称的部分 到角度平分线（WH）的反射角度。
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公开(公告)号：US06680151B2
公开(公告)日：2004-01-20
申请号：US10174646
申请日：2002-06-18
IPC分类号： G03F900
CPC分类号： G03F1/30
摘要： An alternating phase mask is described in which a propagation of a T phase conflict which occurs in the case of a T pattern structure is avoided by producing a phase jump at one of the 90° corners of the T pattern structure. First and second transparent area segments, which produce a mutual phase difference of 180°, are separated by a narrow slot running approximately at 45° toward the corner of the T pattern structure. The structure containing the transparent area segments, which are separated by the slot running at 45°, can also be provided at the other corner of the T structure providing a solution for each T conflict. The trimming mask for eliminating the dark line artificially produced by the 180° phase jump is a conventional mask and requires no additional coloration. Moreover, alignment errors are minimal on account of the small number of trimming openings.
摘要翻译： 描述了一种交替相位掩模，其中通过在T图案结构的90°角之一处产生相位跳跃来避免在T图案结构的情况下发生的T相冲突的传播。 产生180°相互相位差的第一透明区域和第二透明区域段通过大致45度向T图案结构的拐角延伸的窄槽分隔开。 包含由45°运行的槽隔开的透明区域段的结构也可以设置在T结构的另一个角上，为每个T冲突提供解决方案。 用于消除由180°相位跳跃人为产生的暗线的修剪掩模是常规的掩模，并且不需要额外的着色。 此外，由于修剪开口的数量少，对准误差最小。
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公开(公告)号：US20050095512A1
公开(公告)日：2005-05-05
申请号：US10928759
申请日：2004-08-27
申请人： Molela Moukara , Burkhard Ludwig , Jorg Thiele , Marco Ahrens , Roderick Kohle , Rainer Pforr , Nicolo Morgana
发明人： Molela Moukara , Burkhard Ludwig , Jorg Thiele , Marco Ahrens , Roderick Kohle , Rainer Pforr , Nicolo Morgana
CPC分类号： G03F7/70441 , G03F1/30 , G03F1/36 , G03F7/70466
摘要： A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (α). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (α). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.
摘要翻译： 光刻掩模具有由第一不透明部分（O 1）和第二不透明部分（O 2）形成的成角度的结构元件（O）。 结构元件具有至少一个反射角（α）。 倾斜结构元件（O）包括面向反射角（α）的至少一个凸部（A）。 与成角度的结构元件（O）相邻的至少一个透明结构（T）设置在倾斜结构元件（O）的凸部（A）处。 透明结构（T）以分开的方式形成在成角度的结构元件（O）的凸部（A）处，因此包括两个可区分的透明段（T 1，T 2），其至少形成在主要轴向对称的部分 到角度平分线（WH）的反射角度。
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5.发明授权Method for determining and removing phase conflicts on alternating phase masks 有权用于确定和消除交替相位掩模上相位冲突的方法公开(公告)号：US06730463B2
公开(公告)日：2004-05-04
申请号：US10126371
申请日：2002-04-19
IPC分类号： G03C500
CPC分类号： G03F1/30
摘要： A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.
摘要翻译： 衬底晶片上的光致抗蚀剂层在具有第一曝光辐射的第一部分中暴露，并且在第二部分中具有相移180°的第二曝光辐射。 第一和第二部分在其中光致抗蚀剂层人为地不充分暴露的边界区域彼此相邻。 在这些边界区域之间的距离小于光刻临界的最小距离的情况下，光致抗蚀剂层在第一边界区域处以第三曝光辐射暴露，并且在第二边界区域处以第四曝光辐射相位偏移180° °。 为该工艺提供的修剪掩模具有第一半透明区域和第二半透明区域。 第一透光区域和第二透光区域被形成为使得穿过第一透光区域的光和穿过第二透光区域的光线具有180°的相位偏移。
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公开(公告)号：US08293431B2
公开(公告)日：2012-10-23
申请号：US12761876
申请日：2010-04-16
申请人： Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
发明人： Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
IPC分类号： G03F1/40
摘要： A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.
摘要翻译： 平版印刷掩模包括包括凹槽的第一层，包含区域的第二层和包围区段的凹槽状结构。 形成第一层和第二层以便减小第二层内的电位差。 形成光刻掩模的方法包括形成第一层和第二层以将第二层设置在第一层上，将第二层图案化以包括封闭这些区段的区段，区域和沟槽状结构，以及在第一层中形成凹槽 层在未被第二层覆盖的部分。 形成第一层和第二层，以在形成第一层中的槽的步骤期间减小第二层内的电位差。
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公开(公告)号：US07339652B2
公开(公告)日：2008-03-04
申请号：US11339844
申请日：2006-01-26
申请人： Molela Moukara , Rainer Pforr , Thomas Muelders , Mario Hennig , Karsten Zeiler
发明人： Molela Moukara , Rainer Pforr , Thomas Muelders , Mario Hennig , Karsten Zeiler
CPC分类号： G03F7/70283 , G03F1/30 , G03F1/32 , G03F7/701 , G03F7/70108 , G03F7/70125
摘要： An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.
摘要翻译： 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。
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公开(公告)号：US20100266939A1
公开(公告)日：2010-10-21
申请号：US12761876
申请日：2010-04-16
申请人： Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
发明人： Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
IPC分类号： G03F1/00
摘要： A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.
摘要翻译： 平版印刷掩模包括包括凹槽的第一层，包含区域的第二层和包围区段的凹槽状结构。 形成第一层和第二层以便减小第二层内的电位差。 形成光刻掩模的方法包括形成第一层和第二层以将第二层设置在第一层上，将第二层图案化以包括封闭这些区段的区段，区域和沟槽状结构，以及在第一层中形成凹槽 层在未被第二层覆盖的部分。 形成第一层和第二层，以在形成第一层中的槽的步骤期间减小第二层内的电位差。
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公开(公告)号：US20060181691A1
公开(公告)日：2006-08-17
申请号：US11339844
申请日：2006-01-26
申请人： Molela Moukara , Rainer Pforr , Thomas Muelders , Mario Hennig , Karsten Zeiler
发明人： Molela Moukara , Rainer Pforr , Thomas Muelders , Mario Hennig , Karsten Zeiler
IPC分类号： G03B27/54
CPC分类号： G03F7/70283 , G03F1/30 , G03F1/32 , G03F7/701 , G03F7/70108 , G03F7/70125
摘要： An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.
摘要翻译： 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。
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10.发明授权Method for determining the ability to project images of integrated semiconductor circuits onto alternating phase masks 失效确定将集成半导体电路的图像投影到交替相位掩模上的能力的方法公开(公告)号：US06957414B2
公开(公告)日：2005-10-18
申请号：US10352735
申请日：2003-01-27
申请人： Burkhard Ludwig , Molela Moukara
发明人： Burkhard Ludwig , Molela Moukara
CPC分类号： G03F1/30
摘要： A method is used to check the direct convertibility of integrated semiconductor circuits into alternating phase masks. This is done by explicitly localizing the phase conflicts occurring in the corresponding layout while solely using the technological requirements made of the design. The set of phase conflicts determined with the aid of this formalism is complete and minimal and thus proves to be an optimum starting point for methods for handling conflicts of this type.
摘要翻译： 一种方法用于检查集成半导体电路直接可转换成交替相位掩模。 这通过明确地定位在相应布局中发生的相位冲突，而仅使用由设计的技术要求。 在这种形式主义的帮助下确定的一系列相位冲突是完整和最小的，因此被证明是处理这种冲突的方法的最佳起点。
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