公开(公告)号：US06660437B2

公开(公告)日：2003-12-09

申请号：US10158733

申请日：2002-05-30

申请人： Christoph Friedrich ,  Uwe Griesinger ,  Michael Heissmeier ,  Burkhard Ludwig ,  Molela Moukara ,  Rainer Pforr

发明人： Christoph Friedrich ,  Uwe Griesinger ,  Michael Heissmeier ,  Burkhard Ludwig ,  Molela Moukara ,  Rainer Pforr

IPC分类号： G03F900

CPC分类号： G03F1/30

摘要： An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±&Dgr; &agr;, whereby &Dgr; &agr; a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

摘要翻译： 描述具有包含两个不透明段的分支结构的交替相位掩模。 两个透明表面片分别设置在片段的两侧或其部件上。 表面段设置有被偏移180°±Δα的相位，由此Δaa不大于25°。 表面段由相位位于相邻表面段的相位之间的至少一个透明表面边界段分开。

公开(公告)号：US06635388B1

公开(公告)日：2003-10-21

申请号：US09429837

申请日：1999-10-29

申请人： Christoph Friedrich ,  Uwe Griesinger ,  Rainer Pforr ,  Dietrich Widmann ,  Andreas Grassmann

发明人： Christoph Friedrich ,  Uwe Griesinger ,  Rainer Pforr ,  Dietrich Widmann ,  Andreas Grassmann

IPC分类号： G03F900

CPC分类号： G03F1/34 ,  G03F7/2022

摘要： The invention relates to a phase shift mask for lithographically producing small structures at the limit of a resolution that is predetermined by the wavelength of the exposure radiation. The phase shift mask has first regions A and second regions B that effect a phase-shift relative to the first regions. The second regions are arranged beside the first regions for producing a sudden phase shift along the boundaries between the first and the second regions. Individual first regions touch one another via corners at points, at which the second regions also touch one another via corners. The result is that the boundaries between first and second regions merge at these points and these points are opaque to the radiation. The invention makes it possible to expose extremely small contact holes with just a single exposure and thus leads to a reduction of costs in the fabrication of integrated semiconductor circuits.

摘要翻译： 本发明涉及一种用于光刻产生在由曝光辐射的波长预定的分辨率极限处的小结构的相移掩模。 相移掩模具有相对于第一区域进行相移的第一区域A和第二区域B. 第二区域布置在第一区域旁边，用于沿着第一和第二区域之间的边界产生突然的相移。 单个第一区域通过角点彼此接触，在第二区域也通过拐角彼此接触。 结果是第一和第二区域之间的边界在这些点处合并，并且这些点对辐射是不透明的。 本发明使得可以仅用一次曝光来暴露极小的接触孔，从而导致集成半导体电路的制造成本的降低。

公开(公告)号：US06466373B1

公开(公告)日：2002-10-15

申请号：US09677321

申请日：2000-09-29

申请人： Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

发明人： Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

IPC分类号： G02B2700

CPC分类号： G03F1/29 ,  G03F1/32 ,  G03F1/34 ,  G03F1/70 ,  G03F7/2026 ,  G03F7/70466

摘要： For lithographically producing the smallest structures at less than the exposure wavelengths in semiconductor fabrication, a double exposure is carried out using a thick phase mask and a trimming mask, the trimming mask further structures the phase-contrast lines produced by the phase mask. Besides transparent or opaque regions, the trimming mask also has phase-shifting regions. These surround transparent regions of the trimming mask through which the phase-contrast lines produced by the first mask are locally re-exposed, that is to say interrupted. The intensity profile of successive line sections is especially rich in contrast through the addition of the phase-shifting partially transparent regions on the second mask; the distances between the line sections can be reduced. The trimming mask, otherwise used only for larger structures, is therefore suitable for the configuration of the finest dimensionally critical structures.

摘要翻译： 为了在半导体制造中以小于曝光波长的方式平版印刷产生最小结构，使用厚相位掩模和修剪掩模进行双重曝光，修整掩模进一步构成由相位掩模产生的相位对比线。 除了透明或不透明区域之外，修整掩模还具有相移区域。 这些环绕着修整掩模的透明区域，由第一掩模产生的相位对应线通过该区域被局部再暴露，也就是说被中断。 通过在第二掩模上添加相移部分透明区域，连续线段的强度分布特别丰富; 可以减少线路部分之间的距离。 因此，修剪面罩，否则仅用于较大的结构，因此适用于最精细的尺寸关键结构的构造。

公开(公告)号：US06838216B2

公开(公告)日：2005-01-04

申请号：US10438370

申请日：2003-05-14

申请人： Uwe Griesinger ,  Mario Hennig ,  Jürgen Knobloch ,  Rainer Pforr ,  Manuel Vorwerk

发明人： Uwe Griesinger ,  Mario Hennig ,  Jürgen Knobloch ,  Rainer Pforr ,  Manuel Vorwerk

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00 ,  G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/29 ,  G03F7/70433

摘要： Auxiliary openings are assigned to openings on a mask to be transferred to a wafer. These auxiliary openings have a phase-shifting property, preferably between 160° and 200° with respect to the openings, and a cross section lying below the limiting dimension for the printing of the projection apparatus, so that the auxiliary openings themselves are not printed onto the wafer. However, the auxiliary openings do enhance the contrast of the aerial image, in particular of an associated, isolated or semi-isolated opening on the wafer. The auxiliary openings may have a distance from the opening that lies above the resolution limit of the projection apparatus but that is less than the coherence length of the light used for the projection. A phase-related utilization of the optical proximity effect results, which can produce elliptical structures from square openings on the mask when the auxiliary openings are disposed in the preferential direction.

公开(公告)号：US06835506B2

公开(公告)日：2004-12-28

申请号：US10199193

申请日：2002-07-19

申请人： Uwe Griesinger

发明人： Uwe Griesinger

IPC分类号： G03F900

CPC分类号： G03F7/2026 ,  G03F1/26

摘要： The present invention provides a method for producing a photomask (1), which has the following steps: provision of a mask blank with a substrate (1a) and a masking layer (1b) applied thereto; whole-area resist-coating of the mask blank with a photoresist; performance of a raster scan exposure of the photoresist in accordance with a predetermined photomask pattern in a pattern region (MB), which is separated from an edge (1c) of the mask blank by a peripheral edge region (RB); performance of the raster scan exposure in at least one peripheral partial region of the edge region (RB), which adjoins the edge (1c) on one side; development of the exposed photoresist; etching of the masking layer (1b); and removal of the photoresist. The present invention also provides a corresponding photomask.

摘要翻译： 本发明提供一种光掩模（1）的制造方法，其具有以下步骤：提供具有基板（1a）和掩模层（1b）的掩模坯料; 具有光致抗蚀剂的掩模坯料的全面抗蚀涂层; 根据通过边缘区域（RB）与掩模毛坯的边缘（1c）分离的图案区域（MB）中的预定光掩模图案，光刻胶的光栅扫描曝光的性能; 在边缘区域（RB）的至少一个周边部分区域中的光栅扫描曝光的性能，其邻接在一侧上的边缘（1c）; 曝光光刻胶的发展; 蚀刻掩模层（1b）; 并除去光致抗蚀剂。 本发明还提供了相应的光掩模。