摘要:
In a method for improving the imaging properties of a projection objective of a microlithographic projection exposure apparatus, an appropriate illumination angle distribution adapted to a mask (24; 224) to be projected is selected. Then locations (40a, 40b; 60a, 60b; 80a, 80b, 80c) in an exit pupil of the projection objective (20), which are illuminated under these conditions by projection light during a projection of the mask, are determined. For at least one image point, an actual value of an imaging quantity, e.g. a wavefront profile or a polarization state, is determined that influences the imaging properties of the projection objective. Finally, corrective measures are calculated such that the actual value of the imaging quantity approximates a desired value at these locations. In this last step, however, deviations of the actual value from the desired value are taken into account exclusively at said locations illuminated in the exit pupil.
摘要:
A method and device can be used for automatically generating at least one of a mask layout and an illumination pixel pattern of an imaging system in a process for the manufacturing of a semiconductor device. The mask layout is subdivided into a multitude of discrete tiles. A first dataset is generated and includes amplitude point spread function (APSF) values for a given imaging system for at least one defocus value z. A second dataset is generated and includes tile spread functions Vq(r), corresponding to mask tiles and illumination pixels. An intensity distribution I(r) is optimized in an image plane for the semiconductor device subject to a merit function by means of a stochastic variation by at least one of the group of the discrete mask tiles and the illumination pixels using the pre-calculated tile spread functions Vq(r) of the second dataset.
摘要:
Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection.
摘要:
An arrangement for the transfer of structural elements of a photomask onto a substrate includes an illumination device, a photomask with a plurality of structural elements, wherein radiation from the illumination device transfers the structural elements of the photomask onto a photoresist placed on a substrate, and an optical element, wherein the optical element produces a local variation in the degree of transmission of the radiation.
摘要:
Method and device for automatically generating at least one of a mask layout and an illumination pixel pattern, of an imaging system in a process for the manufacturing of a semiconductor device, wherein the mask layout is subdivided into a multitude of discrete tiles, comprisinga) generating a first dataset comprising amplitude point spread function (APSF) values for a given imaging system for at least one defocus value z,b) after splitting the illumination pixel pattern into qk pixels, generating a second dataset comprising tile spread functions Vq(r), corresponding to mask tiles and illumination pixels,c) optimizing an intensity distribution I(r) in an image plane for the semiconductor device subject to a merit function, by means of a stochastic variation by at least one of the group of the discrete mask tiles and the illumination pixels using the pre-calculated tile spread functions Vq(r) of the second dataset. The invention is also concerned with the automatic generation of an effective two dimensional mask layout.
摘要:
An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.
摘要:
An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.
摘要:
A transparent optical element in a region between a photo mask and a light source of a photolithographic apparatus is provided having a plurality of attenuating elements being arranged in accordance with a first intensity correction function. The first intensity correction function is calculated from variations of characteristic feature size of structural elements of a resist pattern as compared to the nominal values of structural elements of a layout pattern. The variations of the characteristic feature size are divided into a first contribution being associated with the photolithographic apparatus and into a second contribution being associated with the photo mask.
摘要:
The imaging device has, in the illumination pupil region, an illumination distribution characterized by dipole-like light distributions along a straight line. The imaging device makes it possible to image different types of structures from a photomask simultaneously with a significantly better process window than conventional imaging devices.
摘要:
A catadioptric projection objective having a catadioptric lens section and a dioptric lens section is disclosed. Its catadioptric lens section comprises a concave mirror and a beam-deflecting device, which, in the case of one embodiment, comprises a physical beamsplitter having a polarization-beamsplitting surface, followed by a deflecting mirror. The reflectance curve of that beamsplitting surface for s-polarized light, the transmittance, TPBS, of that beamsplitting surface for p-polarized light, and the reflectance of the deflecting mirror for light coming from the beamsplitter are adapted to suit one another such that large variations in that transmittance, TPBS, for incidence angles close to the beamsplitting coating's internal Brewster angle are compensated such that the total transmittance of the beam-deflecting device remains essentially constant over the entire utilized range of incidence angles. The resultant projection objective allows uniformly illuminating the image field, without incidence of apodization effects.