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    Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
    3.
    发明申请
    Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same 有权
    具有电浮体晶体管的多位存储单元及其编程和读取方法

    公开(公告)号：US20070187775A1

    公开(公告)日：2007-08-16

    申请号：US11703429

    申请日：2007-02-07

    申请人： Serguei Okhonin ,  Eric Carman ,  Mark-Eric Jones

    发明人： Serguei Okhonin ,  Eric Carman ,  Mark-Eric Jones

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7841 ,  G11C7/1006 ,  G11C7/16 ,  G11C11/404 ,  G11C11/565 ,  G11C2211/4016

    摘要： There are many inventions described herein as well as many aspects and embodiments of those inventions, for example, multi-bit memory cell and circuitry and techniques for reading, writing and/or operating a multi-bit memory cell (and memory cell array having a plurality of such memory cells) having one or more electrically floating body transistors in which an electrical charge is stored in the body region of the electrically floating body transistor. The multi-bit memory cell stores more than one data bit (for example, two, three, four, five, six, etc.) and/or more than two data states (for example, three, four, five, six, etc. data or logic states. Notably, the memory cell array may comprise a portion of an integrated circuit device, for example, logic device (for example, a microprocessor) or a portion of a memory device (for example, a discrete memory).

    摘要翻译： 这里描述的许多发明以及这些发明的许多方面和实施例，例如多位存储器单元以及用于读取，写入和/或操作多位存储器单元（以及具有 多个这样的存储单元）具有一个或多个电浮动体晶体管，其中电荷存储在电浮体晶体管的体区中。 多比特存储单元存储多于一个的数据位（例如，两个，三个，四个，五个，六个等等）和/或两个以上的数据状态（例如，三个，四个，五个，六个等等 值得注意的是，存储单元阵列可以包括集成电路器件的一部分，例如逻辑器件（例如，微处理器）或存储器件（例如，分立存储器）的一部分。

    Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
    4.
    发明授权
    Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same 有权
    具有电浮体晶体管的多位存储单元及其编程和读取方法

    公开(公告)号：US07542345B2

    公开(公告)日：2009-06-02

    申请号：US11703429

    申请日：2007-02-07

    申请人： Serguei Okhonin ,  Eric Carman ,  Mark-Eric Jones

    发明人： Serguei Okhonin ,  Eric Carman ,  Mark-Eric Jones

    IPC分类号： G11C11/34

    CPC分类号： H01L29/7841 ,  G11C7/1006 ,  G11C7/16 ,  G11C11/404 ,  G11C11/565 ,  G11C2211/4016

    摘要： There are many inventions described herein as well as many aspects and embodiments of those inventions, for example, multi-bit memory cell and circuitry and techniques for reading, writing and/or operating a multi-bit memory cell (and memory cell array having a plurality of such memory cells) having one or more electrically floating body transistors in which an electrical charge is stored in the body region of the electrically floating body transistor. The multi-bit memory cell stores more than one data bit (for example, two, three, four, five, six, etc.) and/or more than two data states (for example, three, four, five, six, etc. data or logic states. Notably, the memory cell array may comprise a portion of an integrated circuit device, for example, logic device (for example, a microprocessor) or a portion of a memory device (for example, a discrete memory).

    摘要翻译： 这里描述的许多发明以及这些发明的许多方面和实施例，例如多位存储器单元以及用于读取，写入和/或操作多位存储器单元（以及具有 多个这样的存储单元）具有一个或多个电浮动体晶体管，其中电荷存储在电浮体晶体管的体区中。 多比特存储单元存储多于一个的数据位（例如，两个，三个，四个，五个，六个等等）和/或两个以上的数据状态（例如，三个，四个，五个，六个等等 值得注意的是，存储单元阵列可以包括集成电路器件的一部分，例如逻辑器件（例如，微处理器）或存储器件（例如，分立存储器）的一部分。