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1.发明授权Method for making a photovoltaic cell comprising contact regions doped through a lamina 有权制造光伏电池的方法，该光伏电池包括通过层间掺杂的接触区域公开(公告)号：US07858430B2
公开(公告)日：2010-12-28
申请号：US12339032
申请日：2008-12-18
CPC分类号： H01L31/03921 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： In aspects of the present invention, a method is disclosed to form a lamina having opposing first and second surfaces. Heavily doped contact regions extend from the first surface to the second surface. Generally the lamina is formed by affixing a semiconductor donor body to a receiver element, then cleaving the lamina from the semiconductor donor body wherein the lamina remains affixed to the receiver element. In the present invention, the heavily doped contact regions are formed by doping the semiconductor donor body before cleaving of the lamina. A photovoltaic cell comprising the lamina is then fabricated. By forming the heavily doped contact regions before bonding to the receiver element and cleaving, post-bonding high-temperature steps can be avoided, which may be advantageous.
摘要翻译： 在本发明的方面，公开了一种形成具有相对的第一和第二表面的薄片的方法。 重掺杂的接触区域从第一表面延伸到第二表面。 通常，通过将半导体施主体附着到接收器元件，然后从半导体施主体分离薄层而形成薄片，其中薄片保持固定在接收器元件上。 在本发明中，重掺杂的接触区域通过在切割层之前掺杂半导体施主体形成。 然后制造包括层板的光伏电池。 通过在接合元件接合之前形成重掺杂的接触区域并且断开，可以避免后接合高温步骤，这可能是有利的。
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2.发明申请PHOTOVOLTAIC MODULE COMPRISING THIN LAMINAE CONFIGURED TO MITIGATE EFFICIENCY LOSS DUE TO SHUNT FORMATION 审中-公开包含薄层薄膜的光伏模块配置为降低分层形成造成的效率损失公开(公告)号：US20100031995A1
公开(公告)日：2010-02-11
申请号：US12189159
申请日：2008-08-10
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/046 , H01L31/18 , H01L31/186 , H01L31/1892 , Y02E10/50 , Y02P70/521
摘要： A photovoltaic cell can be formed from a thin semiconductor lamina cleaved from a substantially crystalline wafer. Shunts may inadvertently be formed through such a lamina, compromising device performance. By physically severing the lamina into a plurality of segments, the segments of the lamina preferably electrically connected in series, loss of efficiency due to shunt formation may be substantially reduced. In some embodiments, adjacent laminae are connected in series into strings, and the strings are connected in parallel to compensate for the reduction in current caused by severing the lamina into segments.
摘要翻译： 光伏电池可以由从基本上晶体的晶片切割的薄的半导体层形成。 分流器可能无意中通过这样的层板形成，损害了设备性能。 通过将层间物理切割成多个段，优选层叠电连接的层片段，可能显着减少由于分流形成而导致的效率损失。 在一些实施例中，相邻薄片串联连接成串，并且串并联连接以补偿由层切割成片段而导致的电流减少。
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公开(公告)号：US07842585B2
公开(公告)日：2010-11-30
申请号：US12208392
申请日：2008-09-11
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.
摘要翻译： 通过在诸如半导体晶片的施主体的表面下方注入气体离子形成非常薄的光伏电池。 离子注入限定了解理面，随后的步骤在切割平面处从晶片剥离薄层。 光伏电池，或光伏电池的基极或发射极的全部或一部分形成在层内。 在优选实施例中，在切割步骤之前将晶片固定到接收器。 电接触可以形成在层的两个表面上，或仅形成在一个表面上。
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4.发明授权Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance 有权一种用于使用具有可调整电阻的可切换半导体存储元件的存储单元的方法公开(公告)号：US07800933B2
公开(公告)日：2010-09-21
申请号：US11496986
申请日：2006-07-31
CPC分类号： G11C11/5692 , G11C13/0069 , G11C17/14 , G11C17/165 , G11C2013/0073 , H01L27/101
摘要： A nonvolatile memory cell comprising a diode formed of semiconductor material can store memory states by changing the resistance of the semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) In preferred embodiments, set pulses are applied with the diode under forward bias, while reset pulses are applied with the diode in reverse bias. By switching resistivity of the semiconductor material of the diode, a memory cell can be either one-time programmable or rewriteable, and can achieve two, three, four, or more distinct data states.
摘要翻译： 包括由半导体材料形成的二极管的非易失性存储单元可以通过施加设置脉冲（降低电阻）或复位脉冲（增加电阻）来改变半导体材料的电阻来存储存储器状态。在优选实施例中，施加设定脉冲 二极管在正向偏置下，而复位脉冲以二极管反向施加。 通过切换二极管的半导体材料的电阻率，存储器单元可以是一次性可编程的或可重写的，并且可以实现两个，三个，四个或更多个不同的数据状态。
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公开(公告)号：US07745312B2
公开(公告)日：2010-06-29
申请号：US12007780
申请日：2008-01-15
IPC分类号： H01L21/20
CPC分类号： H01L29/868 , H01L27/1021
摘要： A method of making a pillar device includes providing an insulating layer having an opening, and selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.
摘要翻译： 制造柱装置的方法包括提供具有开口的绝缘层，并且将锗或富锗硅锗半导体材料选择性地沉积到开口中以形成柱装置。
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公开(公告)号：US20100139755A1
公开(公告)日：2010-06-10
申请号：US12331376
申请日：2008-12-09
CPC分类号： H01L31/02008 , H01L31/022433 , H01L31/0475 , H01L31/0508 , H01L31/0747 , H01L31/1892 , Y02E10/50
摘要： A photovoltaic device is disclosed herein that, in various aspects, includes a conductive layer, and a substantially crystalline lamina with a first surface oriented toward the conductive layer and a second surface oriented away from the conductive layer. The lamina thickness is within the range between about 0.2 microns and about 50 microns. An aperture passes through the lamina from the first surface to the second surface. A connector in electrical communication with the conductive layer is disposed through the aperture. Methods of manufacture of the photovoltaic devise are also disclosed.
摘要翻译： 本文公开了一种光电器件，其在各个方面包括导电层，以及具有朝向导电层的第一表面的基本上为晶体的层，以及远离导电层的第二表面。 层厚度在约0.2微米至约50微米之间的范围内。 孔从第一表面到第二表面通过层。 与导电层电连通的连接器穿过孔设置。 还公开了光伏设备的制造方法。
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公开(公告)号：US20090197368A1
公开(公告)日：2009-08-06
申请号：US12208392
申请日：2008-09-11
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.
摘要翻译： 通过在诸如半导体晶片的施主体的表面下方注入气体离子形成非常薄的光伏电池。 离子注入限定了解理面，随后的步骤在切割平面处从晶片剥离薄层。 光伏电池，或光伏电池的基极或发射极的全部或一部分形成在层内。 在优选实施例中，在切割步骤之前将晶片固定到接收器。 电接触可以形成在层的两个表面上，或仅形成在一个表面上。
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公开(公告)号：US20090197367A1
公开(公告)日：2009-08-06
申请号：US12209364
申请日：2008-09-12
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.
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公开(公告)号：US20090194163A1
公开(公告)日：2009-08-06
申请号：US12208298
申请日：2008-09-10
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.
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10.发明授权Inverted staggered thin film transistor with salicided source/drain structures and method of making same 有权具有水银源/漏极结构的反向交错薄膜晶体管及其制造方法公开(公告)号：US06815781B2
公开(公告)日：2004-11-09
申请号：US10270394
申请日：2002-10-15
IPC分类号： H01L2975
CPC分类号： H01L27/0688 , H01L27/112 , H01L27/12
摘要： A semiconductor device, such as an inverted staggered thin film transistor, includes a gate electrode, a gate insulating layer located above the gate electrode, an active layer located above the gate insulating layer and an insulating fill layer located above the active layer. A first opening and a second opening are located in the insulating fill layer, a first source or drain electrode is located in the first opening and a second source or drain electrode is located in the second opening. At least one of the first and the second source or drain electrodes comprise a polysilicon layer and a metal silicide layer.
摘要翻译： 诸如倒置交错薄膜晶体管的半导体器件包括栅电极，位于栅电极上方的栅极绝缘层，位于栅极绝缘层上方的有源层和位于有源层上方的绝缘填充层。 第一开口和第二开口位于绝缘填充层中，第一源极或漏极位于第一开口中，第二源极或漏极位于第二开口中。 第一和第二源极或漏极中的至少一个包括多晶硅层和金属硅化物层。
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