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公开(公告)号：US5953128A
公开(公告)日：1999-09-14
申请号：US929341
申请日：1997-08-28
CPC分类号： G03F7/70558 , G03F7/70641
摘要： Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要翻译： 聚焦和曝光参数可以通过在基板上的抗蚀剂膜中产生形状和空间的互补色调图案来制造微电子学的光刻工艺中进行控制。 测量抗蚀剂形状和空间的相应尺寸，并根据所测量的尺寸确定聚焦或曝光剂量的适当性。 也可以通过在衬底上产生蚀刻形状和空间的互补色调图案来控制蚀刻参数。 测量蚀刻形状和空间的相应尺寸，并根据所测量的尺寸确定蚀刻参数的合适性。
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2.发明授权Phase shifted test pattern for monitoring focus and aberrations in optical projection systems 失效用于监测光学投影系统中的聚焦和像差的相移测试图案公开(公告)号：US06842237B2
公开(公告)日：2005-01-11
申请号：US10035061
申请日：2001-12-28
CPC分类号： G01M11/0264
摘要： A method is described for determining lens aberrations using a test reticle and a standard metrology tool. The method provides test patterns, preferably in the form of standard overlay metrology test patterns, that include blazed gratings having orientation and pitch selected to sample desired portions of the lens pupil. The method measures relative shifts in the imaged test patterns using standard metrology tools to provide both magnitude and sign of the aberrations. The metrology tools need not be modified if standard test patterns are used, but can be adapted to obtain additional information. The test reticles may be formed with multiple test patterns having a range of orientations and pitch in order to compute any desired order of lens aberration. Alternatively, single test patterns may be used to determine both the magnitude and sign of lower order lens aberrations, such as defocus or coma.
摘要翻译： 描述了使用测试掩模版和标准测量工具确定透镜像差的方法。 该方法提供测试图案，优选地以标准覆盖度量测试图案的形式，其包括具有选择的取向和间距的闪耀光栅以对透镜光瞳的所需部分进行采样。 该方法使用标准计量工具测量成像测试图案中的相对位移，以提供像差的幅度和符号。 如果使用标准测试模式，则不需要修改计量工具，但可以调整以获取其他信息。 为了计算任何所需的镜片像差顺序，测试光罩可以形成有具有取向范围和间距的多个测试图案。 或者，可以使用单个测试图案来确定低阶透镜像差的大小和符号，例如散焦或昏迷。
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3.发明授权Method of improving grating test pattern for lithography monitoring and controlling 失效光刻监测与控制光栅测试图案的改进方法公开(公告)号：US07455939B2
公开(公告)日：2008-11-25
申请号：US11461217
申请日：2006-07-31
IPC分类号： G03F9/00
CPC分类号： G03B27/00 , G03F1/44 , G03F7/70641
摘要： A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1
摘要翻译： 制造用于光刻成像系统的过程监视光栅图案的方法包括确定多个间隔相邻的线元素的最小可分辨间距，以及选择大于1的整数倍M，大于1的过程监视光栅周期 最小可分辨的音高。 该方法然后包括设计具有彼此间隔开的多个相邻组合的线组件的过程监视光栅图案。 每组分组的线元素通过过程监视光栅周期与相邻的一组分组线元素间隔开并平行，使得当过程监视光栅图案由光刻成像系统投影时，每组中的线元素不能从 在1 <| m |≤= M的范围内由线路元件产生的衍射阶数m的傅立叶系数为零。
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公开(公告)号：US6027842A
公开(公告)日：2000-02-22
申请号：US299477
申请日：1999-04-26
IPC分类号： G03F7/20 , G03F7/207 , H01L21/033 , G03F9/00
CPC分类号： G03F7/70558 , G03F7/70641 , H01L21/0334
摘要： Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要翻译： 聚焦和曝光参数可以通过在基板上的抗蚀剂膜中产生形状和空间的互补色调图案来制造微电子学的光刻工艺中进行控制。 测量抗蚀剂形状和空间的相应尺寸，并根据所测量的尺寸确定聚焦或曝光剂量的适当性。 也可以通过在衬底上产生蚀刻形状和空间的互补色调图案来控制蚀刻参数。 测量蚀刻形状和空间的相应尺寸，并根据所测量的尺寸确定蚀刻参数的合适性。
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5.发明授权Single tone process window metrology target and method for lithographic processing 失效单音处理窗口计量目标和光刻处理方法公开(公告)号：US06879400B2
公开(公告)日：2005-04-12
申请号：US09734062
申请日：2000-12-11
CPC分类号： G03F7/70558 , G03F7/70641
摘要： A metrology target mask includes a first array of spaced, substantially parallel elements having essentially the same length and width. Ends of the individual elements are aligned to form opposing array edges. The target mask also includes a second array of elements comprising a central element having a length and a width, and a plurality of spaced, substantially parallel outer elements having a length and a width. The width of the outer elements is less than the width of the central element, with edges of outer elements on each side of and farthest from the central element forming opposing array edges. The pitch of the outer elements is selected such that the outer elements are not resolvable after lithographic printing. After printing, the first array is sensitive to both dose and focus, and the second array is sensitive to dose but not focus, of the energy beam.
摘要翻译： 计量目标掩模包括具有基本相同的长度和宽度的间隔开的基本上平行的元件的第一阵列。 各个元件的端部对准以形成相对的阵列边缘。 目标掩模还包括第二阵列的元件，其包括具有长度和宽度的中心元件，以及具有长度和宽度的多个间隔开的基本平行的外部元件。 外部元件的宽度小于中心元件的宽度，其中外部元件的边缘与中心元件的每一边上的边缘形成相对的阵列边缘。 选择外部元件的间距使得外部元件在平版印刷之后不可分辨。 打印后，第一个阵列对剂量和焦点均敏感，第二个阵列对能量束的剂量敏感，但不对焦点敏感。
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公开(公告)号：US06317211B1
公开(公告)日：2001-11-13
申请号：US09352296
申请日：1999-07-12
IPC分类号： G01B1100
CPC分类号： G03F7/70625 , G03F7/70633
摘要： A metrology apparatus for determining bias and overlay errors in a substrate formed by a lithographic process includes an aperture between the objective lens and the image plane adapted to set the effective numerical aperture of the apparatus. The aperture is adjustable to vary the effective numerical aperture of the apparatus and the aperture may be non-circular, to individually vary the effective numerical aperture of the apparatus in horizontal and vertical directions. To determine bias and overlay error there is provided a target having an array of elements on the substrate, the array comprising a plurality of spaced, substantially parallel elements having a length and a width, the sum of the width of an element and the spacing of adjacent elements defining a pitch of the elements, edges of the elements being aligned along a line forming opposite array edges, the distance between array edges comprising the array width.
摘要翻译： 用于确定由光刻工艺形成的衬底中的偏置和叠加误差的计量装置包括物镜和图像平面之间的孔，用于设定装置的有效数值孔径。 孔径是可调节的，以改变装置的有效数值孔径，并且孔可以是非圆形的，以单独地改变装置在水平和垂直方向上的有效数值孔径。 为了确定偏置和覆盖误差，提供了一种在衬底上具有元件阵列的靶，阵列包括多个间隔开的基本上平行的元件，其具有长度和宽度，元件的宽度和间距的总和 相邻的元件限定元件的间距，元件的边缘沿着形成相对的阵列边缘的线对准，阵列边缘之间的距离包括阵列宽度。
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公开(公告)号：US6004706A
公开(公告)日：1999-12-21
申请号：US311815
申请日：1999-05-13
CPC分类号： G03F7/70558 , G03F7/70641
摘要： Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要翻译： 聚焦和曝光参数可以通过在基板上的抗蚀剂膜中产生形状和空间的互补色调图案来制造微电子学的光刻工艺中进行控制。 测量抗蚀剂形状和空间的相应尺寸，并根据所测量的尺寸确定聚焦或曝光剂量的适当性。 也可以通过在衬底上产生蚀刻形状和空间的互补色调图案来控制蚀刻参数。 测量蚀刻形状和空间的相应尺寸，并根据所测量的尺寸确定蚀刻参数的合适性。
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公开(公告)号：US09360858B2
公开(公告)日：2016-06-07
申请号：US13204955
申请日：2011-08-08
申请人： Christopher P. Ausschnitt , Timothy A. Brunner , Allen H. Gabor , Oleg Gluschenkov , Vinayan C. Menon
发明人： Christopher P. Ausschnitt , Timothy A. Brunner , Allen H. Gabor , Oleg Gluschenkov , Vinayan C. Menon
IPC分类号： G06F19/00 , G05B19/401
CPC分类号： G05B19/401 , G05B2219/2602 , G05B2219/45031
摘要： Deformation of a substrate due to one or more processing steps is determined by measuring substrate alignment data at lithographic processing steps before and after the one or more processing steps. Any abnormal pattern in the alignment data differential is identified by comparing the calculated alignment data differential with previous data accumulated in a database. By comparing the abnormal pattern with previously identified tool-specific patterns for alignment data differential, a processing step that introduces the abnormal pattern and/or the nature of the abnormal processing can be identified, and appropriate process control measures can be taken to rectify any anomaly in the identified processing step.
摘要翻译： 通过在一个或多个处理步骤之前和之后的光刻处理步骤中测量衬底对准数据来确定由于一个或多个处理步骤导致的衬底的变形。 通过将计算的对准数据差异与在数据库中累积的先前数据进行比较来识别对准数据差异中的任何异常模式。 通过将异常模式与先前识别的针对对准数据差异的工具特定模式进行比较，可以识别引入异常模式和/或异常处理性质的处理步骤，并且可以采取适当的过程控制措施来纠正任何异常 在所识别的处理步骤中。
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9.发明授权Method to optimize grating test pattern for lithography monitoring and control 失效优化用于光刻监测和控制的光栅测试图案的方法公开(公告)号：US07585601B2
公开(公告)日：2009-09-08
申请号：US12210699
申请日：2008-09-15
IPC分类号： G03F9/00
CPC分类号： G03B27/00 , G03F1/44 , G03F7/70641
摘要： A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1
摘要翻译： 制造用于光刻成像系统的过程监视光栅图案的方法包括确定多个间隔相邻的线元素的最小可分辨间距，以及选择大于1的整数倍M，大于1的过程监视光栅周期 最小可分辨的音高。 该方法然后包括设计具有彼此间隔开的多个相邻组合的线组件的过程监视光栅图案。 每组分组的线元素通过过程监视光栅周期与相邻的一组分组线元素间隔开并平行，使得当过程监视光栅图案由光刻成像系统投影时，每组中的线元素不能从 在1 <| m |≤= M的范围内由线路元件产生的衍射阶数m的傅立叶系数为零。
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10.发明申请METHOD TO OPTIMIZE GRATING TEST PATTERN FOR LITHOGRAPHY MONITORING AND CONTROL 失效优化用于岩石监测和控制的测绘图案的方法公开(公告)号：US20090011342A1
公开(公告)日：2009-01-08
申请号：US12210699
申请日：2008-09-15
CPC分类号： G03B27/00 , G03F1/44 , G03F7/70641
摘要： A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1
摘要翻译： 制造用于光刻成像系统的过程监视光栅图案的方法包括确定多个间隔相邻的线元素的最小可分辨间距，以及选择大于1的整数倍M，大于1的过程监视光栅周期 最小可分辨的音高。 该方法然后包括设计具有彼此间隔开的多个相邻组合的线组件的过程监视光栅图案。 每组分组的线元素通过过程监视光栅周期与相邻的一组分组线元素间隔开并平行，使得当过程监视光栅图案由光刻成像系统投影时，每组中的线元素不能从 在1 <| m |≤= M的范围内由线路元件产生的衍射阶数m的傅立叶系数为零。
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