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    Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
    2.
    发明授权
    Thin-film field-effect transistor with organic semiconductor requiring low operating voltages 有权
    具有需要低工作电压的有机半导体的薄膜场效应晶体管

    公开(公告)号：US06344660B1

    公开(公告)日：2002-02-05

    申请号：US09323804

    申请日：1999-06-02

    申请人： Christos Dimitrios Dimitrakopoulos ,  Peter Richard Duncombe ,  Bruce K. Furman ,  Robert B. Laibowitz ,  Deborah Ann Neumayer ,  Sampath Purushothaman

    发明人： Christos Dimitrios Dimitrakopoulos ,  Peter Richard Duncombe ,  Bruce K. Furman ,  Robert B. Laibowitz ,  Deborah Ann Neumayer ,  Sampath Purushothaman

    IPC分类号： H01L3524

    CPC分类号： H01L51/0525 ,  H01L21/31691 ,  H01L51/0052 ,  H01L51/0545

    摘要： A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

    摘要翻译： 一种基于有机半导体材料的薄膜晶体管（TFT）器件结构，其在比现有技术的有机TFT器件的当前状态更低的工作电压下表现出高场效应迁移率，高电流调制和低子阈值斜率。 该结构包括合适的衬底，其具有以下特征序列：一组覆盖有高介电常数绝缘体的导电栅极电极，有机半导体层，对应于每条栅极线的导电源极和漏极电极组 ，以及可以覆盖和保护器件结构的可选钝化层。 使用高介电常数栅极绝缘体利用有机半导体的意想不到的栅极电压依赖性，以在非常低的工作电压下实现高场效应迁移率水平。 教导了将这种绝缘体材料的选择和将其集成到TFT结构中的手段的合理组合，这将使得能够容易地在玻璃或塑料基板上制造以及在平板显示器应用中使用这种装置。

    Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
    3.
    发明授权
    Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric 失效
    包括有机半导体和化学溶液沉积的金属氧化物栅极电介质的薄膜效应晶体管的制造

    公开(公告)号：US5946551A

    公开(公告)日：1999-08-31

    申请号：US827015

    申请日：1997-03-25

    申请人： Christos Dimitrios Dimitrakopoulos ,  Peter Richard Duncombe ,  Bruce K. Furman ,  Robert B. Laibowitz ,  Deborah Ann Neumayer ,  Sampath Purushothaman

    发明人： Christos Dimitrios Dimitrakopoulos ,  Peter Richard Duncombe ,  Bruce K. Furman ,  Robert B. Laibowitz ,  Deborah Ann Neumayer ,  Sampath Purushothaman

    IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

    CPC分类号： H01L21/31691 ,  H01L51/0525 ,  H01L51/0052 ,  H01L51/0545

    摘要： A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. A fabrication process for the same, especially a process for deposition of the gate insulator using chemical solutions. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

    摘要翻译： 一种基于有机半导体材料的薄膜晶体管（TFT）器件结构，其在比现有技术的有机TFT器件的当前状态更低的工作电压下表现出高场效应迁移率，高电流调制和低子阈值斜率。 其制造方法，特别是使用化学溶液沉积栅极绝缘体的工艺。 该结构包括以下列顺序排列的合适的衬底：一组由高介电常数绝缘体覆盖的导电栅极电极，有机半导体层，对应于每条栅极线的一组导电源极和漏极电极 ，以及可以覆盖和保护器件结构的可选钝化层。 使用高介电常数栅极绝缘体利用有机半导体的意想不到的栅极电压依赖性，以在非常低的工作电压下实现高场效应迁移率水平。 教导了将这种绝缘体材料的选择和将其集成到TFT结构中的手段的合理组合，这将使得能够容易地在玻璃或塑料基板上制造以及在平板显示器应用中使用这种装置。

    Amorphous dielectric capacitors on silicon
    8.
    发明授权
    Amorphous dielectric capacitors on silicon 失效
    硅上无定形介质电容器

    公开(公告)号：US06255122B1

    公开(公告)日：2001-07-03

    申请号：US09300185

    申请日：1999-04-27

    申请人： Peter Richard Duncombe ,  Robert Benjamin Laibowitz ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

    发明人： Peter Richard Duncombe ,  Robert Benjamin Laibowitz ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

    IPC分类号： H01L2100

    CPC分类号： H01L28/55

    摘要： High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.

    摘要翻译： 具有中等高介电常数的大容量电容器和栅极绝缘体，具有惊人的低泄漏性，使用包括钛酸钡系钛酸钡，钛酸锶钡，钛酸钡锶（BST），钛酸铅，铅的钛酸盐体系材料的钙钛矿型氧化物的非晶或低温膜 钛酸镧锆钛酸铅，钛酸镧钛酸镧，铌酸盐，铝酸盐或钽酸盐体系材料，如铌酸铅镁，铌酸锂锂钽酸锂，铌酸钾和铌酸钾钾，钨 - 青铜系材料如铌酸锶钡， 铅铌酸钡，铌酸钡钡和Bi-层状钙钛矿系材料如钽酸锶铋钛酸铋直接沉积在硅表面上，温度约450℃或更低。