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    MICRO ELECTROMECHANICAL SYSTEM (MEMS) SWITCH
    1.
    发明申请
    MICRO ELECTROMECHANICAL SYSTEM (MEMS) SWITCH 审中-公开
    微机电系统（MEMS）开关

    公开(公告)号：US20090114513A1

    公开(公告)日：2009-05-07

    申请号：US12102442

    申请日：2008-04-14

    申请人： Chul-soo Kim ,  Byeoung-ju Ha ,  In-sang Song ,  Duck-hwan Kim ,  Yun-kwon Park ,  Jea-shik Shin

    发明人： Chul-soo Kim ,  Byeoung-ju Ha ,  In-sang Song ,  Duck-hwan Kim ,  Yun-kwon Park ,  Jea-shik Shin

    IPC分类号： H01H57/00

    CPC分类号： H01H59/0009 ,  H01H2059/0027

    摘要： A Micro ElectroMechanical System (MEMS) switch is provided. The MEMS switch includes a ground, a moving unit moveable according to a driving signal, for connecting the input to the output or disconnecting the input from the output, and an electrode unit arranged in the configuration of a protrusion formed on a portion of the round, to induce a leakage signal generated between the input and the output to move toward the ground.

    摘要翻译： 提供微机电系统（MEMS）开关。 MEMS开关包括接地，可根据驱动信号移动的移动单元，用于将输入连接到输出或从输出端断开输入;以及电极单元，其布置成形成在圆的一部分上的突起的构造 以引起在输入和输出之间产生的泄漏信号朝向地面移动。

    TUNABLE RESONATOR USING FILM BULK ACOUSTIC RESONATOR (FBAR)
    4.
    发明申请
    TUNABLE RESONATOR USING FILM BULK ACOUSTIC RESONATOR (FBAR) 有权
    使用电影大音量谐振器（FBAR）的谐振器

    公开(公告)号：US20090115553A1

    公开(公告)日：2009-05-07

    申请号：US12048481

    申请日：2008-03-14

    申请人： Jea-shik SHIN ,  Yun-kwon Park ,  In-sang Song ,  Duck-hwan Kim ,  Chul-soo Kim

    发明人： Jea-shik SHIN ,  Yun-kwon Park ,  In-sang Song ,  Duck-hwan Kim ,  Chul-soo Kim

    IPC分类号： H03H9/54

    CPC分类号： H03H9/171 ,  H03H2009/02173

    摘要： A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.

    摘要翻译： 提供可调谐谐振器。 可调谐谐振器包括用于进行谐振的膜体声波谐振器（FBAR）和至少一个驱动器，该驱动器布置在FBAR的一侧并通过外部信号变形并与FBAR接触，从而改变谐振 FBAR的频率。 因此，可以简单地使用微机电系统（MEMS）技术来实现多频带集成和单芯片制造，并且可以批量生产。

    Tunable resonator and tunable filter
    8.
    发明授权
    Tunable resonator and tunable filter 有权
    可调谐谐振器和可调滤波器

    公开(公告)号：US08410871B2

    公开(公告)日：2013-04-02

    申请号：US12045850

    申请日：2008-03-11

    申请人： Chul-soo Kim ,  Sang-won Yun ,  Young-ho Cho ,  In-sang Song ,  Byeoung-ju Ha ,  Duck-hwan Kim

    发明人： Chul-soo Kim ,  Sang-won Yun ,  Young-ho Cho ,  In-sang Song ,  Byeoung-ju Ha ,  Duck-hwan Kim

    IPC分类号： H01P1/203 ,  H01P7/08

    CPC分类号： H01P1/20336

    摘要： A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.

    摘要翻译： 提供了一种可调谐滤波器，其包括一个滤波器单元，该滤波器单元包括一对彼此相对设置的微带，连接到滤波单元一侧的电容器单元和用于调节该对微带中的每一个的长度的调节单元 调节过滤器单元的电感，调节单元连接到过滤器单元的相对侧。 因此可以调节微带的长度以改变频带。

    Monolithic duplexer and fabrication method thereof
    9.
    发明申请
    Monolithic duplexer and fabrication method thereof 有权
    单片双工器及其制造方法

    公开(公告)号：US20070024391A1

    公开(公告)日：2007-02-01

    申请号：US11392624

    申请日：2006-03-30

    申请人： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    发明人： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    IPC分类号： H03H7/46

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706

    摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

    摘要翻译： 一种单片双工器及其制造方法。 单片双工器包括器件晶片，在器件晶片的顶部彼此远离的多个元件，形成在器件晶片的顶部上的第一密封部分和形成在器件晶片的顶部之间的多个第一接地平面 元素。 还提供了盖晶片，其具有用于封装器件晶片，多个突出部分，多个接地柱和空腔的蚀刻区域。 第二密封部分形成在突出部分的底部上，并且多个第二接地平面覆盖多个接地柱。 通孔垂直穿过盖晶片以连接到多个第二接地平面，并且接地端子形成在通孔的顶部上。 第一密封部分和第一接地平面分别附接到第二密封部分和第二接地平面。

    Monolithic duplexer and fabrication method thereof
    10.
    发明授权
    Monolithic duplexer and fabrication method thereof 有权
    单片双工器及其制造方法

    公开(公告)号：US07432781B2

    公开(公告)日：2008-10-07

    申请号：US11392624

    申请日：2006-03-30

    申请人： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    发明人： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    IPC分类号： H03H7/46

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706

    摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

    摘要翻译： 一种单片双工器及其制造方法。 单片双工器包括器件晶片，在器件晶片的顶部彼此远离的多个元件，形成在器件晶片的顶部上的第一密封部分和形成在器件晶片的顶部之间的多个第一接地平面 元素。 还提供了盖晶片，其具有用于封装器件晶片，多个突出部分，多个接地柱和空腔的蚀刻区域。 第二密封部分形成在突出部分的底部上，并且多个第二接地平面覆盖多个接地柱。 通孔垂直穿过盖晶片以连接到多个第二接地平面，并且接地端子形成在通孔的顶部上。 第一密封部分和第一接地平面分别附接到第二密封部分和第二接地平面。