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    MICRO ELECTROMECHANICAL SYSTEM (MEMS) SWITCH
    3.
    发明申请
    MICRO ELECTROMECHANICAL SYSTEM (MEMS) SWITCH 审中-公开
    微机电系统（MEMS）开关

    公开(公告)号：US20090114513A1

    公开(公告)日：2009-05-07

    申请号：US12102442

    申请日：2008-04-14

    申请人： Chul-soo Kim ,  Byeoung-ju Ha ,  In-sang Song ,  Duck-hwan Kim ,  Yun-kwon Park ,  Jea-shik Shin

    发明人： Chul-soo Kim ,  Byeoung-ju Ha ,  In-sang Song ,  Duck-hwan Kim ,  Yun-kwon Park ,  Jea-shik Shin

    IPC分类号： H01H57/00

    CPC分类号： H01H59/0009 ,  H01H2059/0027

    摘要： A Micro ElectroMechanical System (MEMS) switch is provided. The MEMS switch includes a ground, a moving unit moveable according to a driving signal, for connecting the input to the output or disconnecting the input from the output, and an electrode unit arranged in the configuration of a protrusion formed on a portion of the round, to induce a leakage signal generated between the input and the output to move toward the ground.

    摘要翻译： 提供微机电系统（MEMS）开关。 MEMS开关包括接地，可根据驱动信号移动的移动单元，用于将输入连接到输出或从输出端断开输入;以及电极单元，其布置成形成在圆的一部分上的突起的构造 以引起在输入和输出之间产生的泄漏信号朝向地面移动。

    Bulk acoustic wave resonator, filter and duplexer and methods of making same
    7.
    发明申请
    Bulk acoustic wave resonator, filter and duplexer and methods of making same 有权
    体声波谐振器，滤波器和双工器及其制造方法

    公开(公告)号：US20050218755A1

    公开(公告)日：2005-10-06

    申请号：US11098535

    申请日：2005-04-05

    申请人： In-sang Song ,  Byeoung-ju Ha ,  Duck-hwan Kim ,  Yun-kwon Park

    发明人： In-sang Song ,  Byeoung-ju Ha ,  Duck-hwan Kim ,  Yun-kwon Park

    IPC分类号： H03H9/17 ,  H03H3/02 ,  H03H9/02 ,  H03H9/58 ,  H03H9/70 ,  H01L41/053

    CPC分类号： H03H3/02 ,  H03H9/02149 ,  H03H9/105 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021 ,  H03H2003/023 ,  Y10T29/42

    摘要： A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.

    摘要翻译： 具有由夹在第一和第二电极之间的压电层形成的膜的谐振器悬挂在从支撑结构的后表面形成的空腔的上方。 在一个实施例中，空腔壁基本上垂直于后表面。 在另一个实施例中，第一电极形成在空腔中，使得其与支撑结构的背面上的电极电连接。 在另一个实施例中，通过蚀刻穿过支撑结构的后表面中的通孔形成空腔，这导致在设计制造方法时更大的灵活性，同时减少了对相对于其他设计的对准的需要。

    Method of manufacturing a monolithic duplexer
    9.
    发明授权
    Method of manufacturing a monolithic duplexer 有权
    制造单片双工器的方法

    公开(公告)号：US08720023B2

    公开(公告)日：2014-05-13

    申请号：US12647188

    申请日：2009-12-24

    申请人： Yun-kwon Park ,  In-sang Song ,  Seok-chul Yun ,  Seog-woo Hong ,  Byeoung-ju Ha ,  Dong-ha Shim ,  Hae-seok Park ,  Kuang-woo Nam ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  In-sang Song ,  Seok-chul Yun ,  Seog-woo Hong ,  Byeoung-ju Ha ,  Dong-ha Shim ,  Hae-seok Park ,  Kuang-woo Nam ,  Duck-hwan Kim

    IPC分类号： H03H9/15 ,  H03H3/007

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/4902 ,  Y10T29/49155

    摘要： A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

    摘要翻译： 公开了一种用于制造超小型高性能单片双工器的方法。 该方法包括在基板上的绝缘层的上表面上沉积和图案化下电极，以暴露绝缘层的第一部分; 在暴露的绝缘层和下电极的上表面上沉积压电层; 在所述压电层的上部沉积金属并图案化所述金属以形成谐振部分和微调电感器，其中所述下部电极电耦合所述谐振部分和所述微调电感器; 通过在谐振部分下蚀刻衬底来形成空腔来制造气隙型FBAR（膜体声共振）; 以及将封装基板接合在所述基板上，所述封装基板具有基本上防止所述气隙型FBAR之间的信号流入的相移部。

    Air-gap type FBAR, and duplexer using the FBAR
    10.
    发明授权
    Air-gap type FBAR, and duplexer using the FBAR 失效
    气隙式FBAR和双工器使用FBAR

    公开(公告)号：US07233218B2

    公开(公告)日：2007-06-19

    申请号：US11429256

    申请日：2006-05-08

    申请人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    IPC分类号： H03H9/70 ,  H03H9/15 ,  H03H9/10 ,  H03H9/54

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

    摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

    摘要翻译： 通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。 当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。 谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。