公开(公告)号：US6080607A

公开(公告)日：2000-06-27

申请号：US084005

申请日：1998-05-26

申请人： Chun Yen Chang ,  Po-Sheng Shih ,  Ting-Chang Chang ,  Hsiao-Yi Lin

发明人： Chun Yen Chang ,  Po-Sheng Shih ,  Ting-Chang Chang ,  Hsiao-Yi Lin

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L29/786 ,  H01L31/0328

CPC分类号： H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/511

摘要： The invention provides a method for manufacturing a transistor having a low leakage current. In general, spacers must be formed to isolate a gate from a subsequently-formed drain, thereby reducing a leakage current. In the invention, the spacers are formed on the vertical sides of the gate by using a selective deposition process. Therefore, the method for manufacturing a transistor having a low leakage current according to the invention not only constitutes a simplified process, but also controls the widths of the spacers precisely, so that the leakage current of the transistor can be greatly decreased.

摘要翻译： 本发明提供一种制造漏电流低的晶体管的方法。 通常，必须形成间隔物以将栅极与随后形成的漏极隔离，从而减少漏电流。 在本发明中，通过使用选择性沉积工艺在栅极的垂直侧上形成间隔物。 因此，根据本发明的具有低泄漏电流的晶体管的制造方法不仅构成简化的工艺，而且还精确地控制间隔件的宽度，从而可以大大降低晶体管的漏电流。

公开(公告)号：US5786244A

公开(公告)日：1998-07-28

申请号：US770183

申请日：1996-12-19

申请人： Chun Yen Chang

发明人： Chun Yen Chang

IPC分类号： H01L21/335 ,  H01L29/36 ,  H01L29/778 ,  H01L21/338

CPC分类号： H01L29/7785 ,  H01L29/66462 ,  H01L29/365

摘要： A GaAs-InGaAs high electron mobility transistor includes: a GaAs substrate; a GaAs buffer layer overlaying on the GaAs substrate; a graded InGaAs channel overlaying on the GaAs layer; a GaAs spacer layer overlaying on the graded InGaAs channel layer; a .delta.-doping layer overlaying on the GaAs spacer layer; a GaAs cap layer overlaying on the .delta.-doping layer; drain and source terminals overlaying on the GaAs cap layer and contacting the graded InGaAs channel layer; and a gate terminal overlaying on the GaAs cover layer and located between the drain terminal and the source terminal.

摘要翻译： GaAs-InGaAs高电子迁移率晶体管包括：GaAs衬底; 覆盖在GaAs衬底上的GaAs缓冲层; 叠加在GaAs层上的渐变InGaAs沟道; 覆盖在渐变的InGaAs沟道层上的GaAs间隔层; 覆盖在GaAs间隔层上的δ掺杂层; 覆盖在所述δ掺杂层上的GaAs覆盖层; 漏极和源极端子覆盖在GaAs覆盖层上并与渐变的InGaAs沟道层接触; 以及覆盖在GaAs覆盖层上并位于漏极端子和源极端子之间的栅极端子。