公开(公告)号：US20130292651A1

公开(公告)日：2013-11-07

申请号：US13676707

申请日：2012-11-14

申请人： Chun-Gi YOU ,  Joon-Hoo CHOI ,  Jong-Hyun PARK ,  Kyung-Hoon PARK ,  Jeong-Hwan KIM ,  Seong-Kweon HEO

发明人： Chun-Gi YOU ,  Joon-Hoo CHOI ,  Jong-Hyun PARK ,  Kyung-Hoon PARK ,  Jeong-Hwan KIM ,  Seong-Kweon HEO

IPC分类号： H01L51/50

CPC分类号： H01L51/5092 ,  H01L27/3248 ,  H01L27/326 ,  H01L27/3265 ,  H01L51/5206 ,  H01L51/5212 ,  H01L2251/5392

摘要： The organic light emitting display apparatus includes a substrate; a buffer film on the substrate, the buffer film including a via hole, a thin film transistor (TFT) on the buffer film, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first electrode electrically connected to one of the source electrode and the drain electrode and corresponding to the via hole; an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

摘要翻译： 有机发光显示装置包括：基板; 衬底上的缓冲膜，缓冲膜包括通孔，缓冲膜上的薄膜晶体管（TFT），包括有源层的TFT，栅电极，源电极和漏电极，第一电极 电连接到源电极和漏电极中的一个并对应于通孔; 所述第一电极上的中间层，所述中间层包括有机发射层，以及在所述中间层上的第二电极。

公开(公告)号：US20090261340A1

公开(公告)日：2009-10-22

申请号：US12346969

申请日：2008-12-31

申请人： Seong-Kweon HEO ,  Chun-Gi YOU

发明人： Seong-Kweon HEO ,  Chun-Gi YOU

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/124

摘要： A display substrate includes; a gate line disposed on a substrate, a first insulating layer disposed on the substrate including the gate line, the first insulating layer including an opening part extended in a direction crossing the gate line, a data line disposed on the first insulating layer and an inner surface of the opening part, the data line extending in a direction substantially parallel with an extension direction of the opening part, a protective layer disposed on the first insulating layer and the data line, a switching element electrically connected to the gate line and the data line and a pixel electrode electrically connected to the switching element.

摘要翻译： 显示基板包括： 设置在基板上的栅极线，设置在包括栅极线的基板上的第一绝缘层，第一绝缘层包括沿与栅极线交叉的方向延伸的开口部，布置在第一绝缘层上的数据线和内部 所述数据线在与所述开口部的延伸方向大致平行的方向上延伸，所述保护层配置在所述第一绝缘层和所述数据线上，所述开关元件电连接到所述栅极线和所述数据 线和与开关元件电连接的像素电极。

公开(公告)号：US20100044712A1

公开(公告)日：2010-02-25

申请号：US12605647

申请日：2009-10-26

申请人： Seong-Kweon HEO ,  Chun-Gi YOU

发明人： Seong-Kweon HEO ,  Chun-Gi YOU

IPC分类号： H01L33/00

CPC分类号： H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A thin-film transistor substrate includes a gate line, a capacitor dielectric layer, a gate insulation layer, an active pattern, a data line, a protection layer, and a pixel electrode. The gate wiring including a gate electrode, a lower storage electrode, and a gate metal pad is disposed on a substrate. The capacitor dielectric layer is disposed on the lower storage electrode and the gate insulation layer is disposed on the substrate. The active pattern includes an active layer and a dummy active layer disposed on the gate insulation layer in a gate electrode region and a gate metal pad region, respectively. A portion of the upper storage electrode is disposed on the capacitor dielectric layer exposed through a first contact hole in the gate insulation layer.

摘要翻译： 薄膜晶体管基板包括栅极线，电容器电介质层，栅极绝缘层，有源图案，数据线，保护层和像素电极。 包括栅电极，下存储电极和栅极金属焊盘的栅极布线设置在基板上。 电容器电介质层设置在下部存储电极上，栅极绝缘层设置在基板上。 有源图案包括分别设置在栅极电极区域和栅极金属焊盘区域中的栅极绝缘层上的有源层和伪有源层。 上部存储电极的一部分设置在通过栅极绝缘层中的第一接触孔露出的电容器电介质层上。

公开(公告)号：US20080087904A1

公开(公告)日：2008-04-17

申请号：US11871027

申请日：2007-10-11

申请人： Seong-Kweon HEO ,  Chun-Gi YOU ,  Min-Hyuk CHOI

发明人： Seong-Kweon HEO ,  Chun-Gi YOU ,  Min-Hyuk CHOI

IPC分类号： H01L33/00 ,  H01L21/84

CPC分类号： G02F1/13458 ,  G02F1/133555 ,  G02F1/136227 ,  G02F2001/136222 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor array panel includes interconnection members interposed between the underlying gate pads made of an Al-containing metal and the overlying contact assistants made of a transparent conductor such as ITO thereon to prevent corrosion of Al due to ITO, or gate-layer signal transmission lines. Gate-layer signal transmission lines are directly connected to the data-layer signal transmission line to prevent corrosion of Al due to ITO in the thin film transistor array panel according to an embodiment of the present invention. The color filters are formed on the thin film transistor array panel to prevent misalignment between the two display panels so as to increase the aperture ratio.

摘要翻译： 薄膜晶体管阵列面板包括插入在由含Al金属制成的下面的栅极焊盘之间的互连部件和由诸如ITO的透明导体制成的上覆触点辅助件，以防止由于ITO导致的Al的腐蚀或栅极层信号 传输线。 栅极层信号传输线直接连接到数据层信号传输线，以防止根据本发明实施例的薄膜晶体管阵列面板中由ITO引起的Al的腐蚀。 滤色器形成在薄膜晶体管阵列面板上，以防止两个显示面板之间的不对准，从而增加开口率。

公开(公告)号：US20080135845A1

公开(公告)日：2008-06-12

申请号：US11944010

申请日：2007-11-21

申请人： Seong-Kweon HEO ,  Chun-Gi YOU

发明人： Seong-Kweon HEO ,  Chun-Gi YOU

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A thin-film transistor substrate includes a gate line, a capacitor dielectric layer, a gate insulation layer, an active pattern, a data line, a protection layer, and a pixel electrode. The gate wiring including a gate electrode, a lower storage electrode, and a gate metal pad is disposed on a substrate. The capacitor dielectric layer is disposed on the lower storage electrode and the gate insulation layer is disposed on the substrate. The active pattern includes an active layer and a dummy active layer disposed on the gate insulation layer in a gate electrode region and a gate metal pad region, respectively. A portion of the upper storage electrode is disposed on the capacitor dielectric layer exposed through a first contact hole in the gate insulation layer.

摘要翻译： 薄膜晶体管基板包括栅极线，电容器电介质层，栅极绝缘层，有源图案，数据线，保护层和像素电极。 包括栅电极，下存储电极和栅极金属焊盘的栅极布线设置在基板上。 电容器电介质层设置在下部存储电极上，栅极绝缘层设置在基板上。 有源图案包括分别设置在栅极电极区域和栅极金属焊盘区域中的栅极绝缘层上的有源层和伪有源层。 上部存储电极的一部分设置在通过栅极绝缘层中的第一接触孔露出的电容器电介质层上。

公开(公告)号：US20120007083A1

公开(公告)日：2012-01-12

申请号：US13080444

申请日：2011-04-05

申请人： Chun-Gi YOU ,  Joon-Hoo Choi

发明人： Chun-Gi YOU ,  Joon-Hoo Choi

IPC分类号： H01L29/04 ,  H01L33/08

CPC分类号： H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/326 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L51/5265 ,  H01L51/5271 ,  H01L51/5296 ,  H01L2227/323

摘要： An organic light-emitting display device and a method of manufacturing the organic light-emitting display device. A metal layer separated from a pixel electrode is formed without increasing the number of masks, thereby simplifying the pixel electrode and obtaining etching characteristics of a gate electrode.

摘要翻译： 一种有机发光显示装置及其制造方法。 在不增加掩模数量的情况下形成与像素电极分离的金属层，从而简化像素电极并获得栅电极的蚀刻特性。

公开(公告)号：US20130200379A1

公开(公告)日：2013-08-08

申请号：US13589636

申请日：2012-08-20

申请人： Chun-Gi YOU ,  Joon-Hoo Choi

发明人： Chun-Gi YOU ,  Joon-Hoo Choi

IPC分类号： H01L51/50 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L27/1288 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/4908

摘要： A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer and a third insulating layer between the gate electrode and the source and drain electrodes, the first insulating layer and the second insulating layer extending in the TFT, a pixel electrode including a transparent conductive oxide material, the pixel electrode being on the first insulating layer and the second insulating layer and being connected to the source or drain electrodes via an opening in the third insulating layer, a capacitor including a first electrode on a same layer as the gate electrode and a second electrode on a same layer as the pixel electrode; and a fourth insulating layer covering the source and drain electrodes and exposing the pixel electrode via an opening.

摘要翻译： 薄膜晶体管（TFT）阵列基板包括：TFT，包括有源层，栅电极，源电极和漏电极，有源层和栅电极之间的第一绝缘层，以及第二绝缘层和第三绝缘层， 所述栅电极和所述源极漏极，所述第一绝缘层和在所述TFT中延伸的所述第二绝缘层，包括透明导电氧化物材料的像素电极，所述像素电极在所述第一绝缘层和所述第二绝缘层上，并且为 通过所述第三绝缘层中的开口连接到所述源电极或漏电极;电容器，包括与所述栅电极相同的层上的第一电极和与所述像素电极相同的层上的第二电极; 以及覆盖所述源电极和漏极的第四绝缘层，并且经由开口暴露所述像素电极。

公开(公告)号：US20130126882A1

公开(公告)日：2013-05-23

申请号：US13480746

申请日：2012-05-25

申请人： Chun-Gi YOU ,  Joon-Hoo Choi

发明人： Chun-Gi YOU ,  Joon-Hoo Choi

IPC分类号： H01L51/50 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/326 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5215 ,  H01L2227/323

摘要： A thin film transistor array substrate includes a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes, a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor and being connected to one of the source and drain electrodes via an opening in the second insulation layer, a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a transparent conductive oxide, and the second electrode being between the first and second insulation layers, and a third insulation layer covering the source and drain electrodes and exposing the pixel electrode.

摘要翻译： 薄膜晶体管阵列基板包括薄膜晶体管，其包括激活层，栅电极，源极和漏极，激活层和栅电极之间的第一绝缘层，以及栅电极和源极之间的第二绝缘层 和漏电极，包括透明导电氧化物的像素电极，所述像素电极在所述第一绝缘层的从所述薄膜晶体管延伸的部分上并且经由所述第二绝缘层中的开口连接到所述源极和漏极之一 包括第一电极和第二电极的电容器，所述第一电极位于与所述活化层相同的层上并且包括透明导电氧化物，所述第二电极位于所述第一绝缘层和所述第二绝缘层之间，并且所述第三绝缘层覆盖 源电极和漏极，并暴露像素电极。

公开(公告)号：US20130161632A1

公开(公告)日：2013-06-27

申请号：US13592508

申请日：2012-08-23

申请人： Chun-Gi YOU ,  Joon-Hoo Choi

发明人： Chun-Gi YOU ,  Joon-Hoo Choi

IPC分类号： H01L29/786 ,  H01L33/62

CPC分类号： H01L27/3276 ,  H01L27/1244 ,  H01L2227/323

摘要： An OLED apparatus including a thin film transistor including an activation layer, a gate electrode insulated from the activation layer and including a lower gate electrode and an upper gate electrode, an interlayer insulation film covering the gate electrode, and a source and drain electrode on the insulation film and contacting the activation layer; an OLED including a pixel electrode electrically connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode; a blister prevention layer on a same level as the activation layer; a gate insulation layer covering the activation layer and the blister prevention layer and insulating the activation layer from the gate electrode; and an interconnection unit including first and second layers on a portion of the gate insulation layer overlying the blister prevention layer, wherein the blister prevention layer protects the interconnection unit on the gate insulation layer from blistering.

摘要翻译： 一种OLED装置，包括：薄膜晶体管，其包括激活层，与所述激活层绝缘并且包括下栅电极和上栅电极的栅电极，覆盖所述栅电极的层间绝缘膜以及所述栅极电极和漏电极 绝缘膜并与活化层接触; 包括与薄膜晶体管电连接的像素电极的OLED，包括发光层的中间层和相对电极; 与激活层在同一水平上的防泡层; 覆盖所述活化层和所述起泡防止层并将所述活化层与所述栅电极绝缘的栅极绝缘层; 以及互连单元，其包括覆盖在防泡层上的栅极绝缘层的一部分上的第一层和第二层，其中防泡层保护栅极绝缘层上的互连单元不起泡。

公开(公告)号：US20110084276A1

公开(公告)日：2011-04-14

申请号：US12753732

申请日：2010-04-02

申请人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

发明人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78609 ,  H01L29/78618

摘要： A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

摘要翻译： 公开了一种薄膜晶体管（TFT）及其制造方法。 TFT包括衬底，设置在衬底上的栅电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上方并包括多晶硅（poly-Si）层的半导体层，设置的欧姆接触层 超过半导体层的预定区域，设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层，以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此，当控制底栅型TFT的截止电流时，可以通过简单的处理来防止由漏电流引起的特性的劣化。