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    THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20110084276A1

    公开(公告)日：2011-04-14

    申请号：US12753732

    申请日：2010-04-02

    申请人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    发明人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78609 ,  H01L29/78618

    摘要： A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

    摘要翻译： 公开了一种薄膜晶体管（TFT）及其制造方法。 TFT包括衬底，设置在衬底上的栅电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上方并包括多晶硅（poly-Si）层的半导体层，设置的欧姆接触层 超过半导体层的预定区域，设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层，以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此，当控制底栅型TFT的截止电流时，可以通过简单的处理来防止由漏电流引起的特性的劣化。

    THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVNG THE SAME
    2.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVNG THE SAME 有权
    薄膜晶体管和显示器件

    公开(公告)号：US20130270538A1

    公开(公告)日：2013-10-17

    申请号：US13898186

    申请日：2013-05-20

    申请人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

    发明人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

    IPC分类号： H01L51/52 ,  H01L29/786

    CPC分类号： H01L51/5281 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/66765 ,  H01L29/78678

    摘要： A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

    摘要翻译： 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。

    ION IMPLANTING SYSTEM
    3.
    发明申请
    ION IMPLANTING SYSTEM 有权
    离子植入系统

    公开(公告)号：US20110140005A1

    公开(公告)日：2011-06-16

    申请号：US12962829

    申请日：2010-12-08

    申请人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    发明人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    IPC分类号： G21G5/00

    CPC分类号： C23C14/48 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/0822 ,  H01J2237/31706

    摘要： An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece.

    摘要翻译： 离子注入系统包括产生离子束的离子产生系统和离子注入室，在该离子注入室中，设置有从离子产生系统产生的离子束照射的工件，并且从离子产生系统产生的离子束 单位被指示。 离子产生系统包括将离子照射到工件的上部的第一离子产生单元和将离子照射到工件的下部的第二离子产生单元。 离子注入系统a可以通过一个离子注入工艺将离子注入到大的工件中，其中离子发生单元在工件的传送方向上彼此交替排列。

    METHOD FOR MANUFACTURING AN ORGANIC LIGHT EMITTING DIODE DISPLAY
    4.
    发明申请
    METHOD FOR MANUFACTURING AN ORGANIC LIGHT EMITTING DIODE DISPLAY 有权
    用于制造有机发光二极管显示器的方法

    公开(公告)号：US20130217165A1

    公开(公告)日：2013-08-22

    申请号：US13860339

    申请日：2013-04-10

    申请人： Yul-Kyu LEE ,  Sun PARK ,  Chun-Gi YOU ,  Jong-Hyun PARK

    发明人： Yul-Kyu LEE ,  Sun PARK ,  Chun-Gi YOU ,  Jong-Hyun PARK

    IPC分类号： H01L51/56

    CPC分类号： H01L51/56 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265

    摘要： Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.

    摘要翻译： 制造OLED显示器包括在基板上形成覆盖第一存储板的第一存储板和栅极绝缘层; 顺序地形成覆盖第一存储板的第二存储板和在栅极绝缘层中间的电容器; 通过向第一存储板中未被电容器中间体覆盖的部分注入杂质而形成第一掺杂区; 形成具有使所述电容器中间露出的电容器开口的层间绝缘层，以及在所述电容器开口中的朝向所述第一掺杂区域的电容器的边缘上的多个防蚀蚀层; 去除包括侵蚀防止层的电容器中间件和侵蚀防止层的下部区域，以及通过第二存储板在第一存储板中注入杂质以形成与第一掺杂区域接触的第二掺杂区域。

    ORGANINC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    ORGANINC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    ORGANINC发光显示装置及其制造方法

    公开(公告)号：US20120104395A1

    公开(公告)日：2012-05-03

    申请号：US13198114

    申请日：2011-08-04

    申请人： Dae-Woo KIM ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    发明人： Dae-Woo KIM ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    IPC分类号： H01L51/54 ,  H01L51/56

    CPC分类号： H01L27/3276 ,  H01L27/3258

    摘要： An organic light emitting display device and method of manufacturing the same are provided. The organic light emitting display device includes: a thin film transistor (TFT) comprising an active layer, a gate electrode, a source electrode, and a drain electrode; an organic light emitting device including a pixel electrode electrically connected to the TFT and formed of the same material and on a same layer as the gate electrode, an emission layer, and an opposing electrode; and a pad electrode formed of the same material and on same layer as the gate electrode. The pad electrode has openings formed therein.

    摘要翻译： 提供一种有机发光显示装置及其制造方法。 有机发光显示装置包括：薄膜晶体管（TFT），包括有源层，栅电极，源电极和漏电极; 一种有机发光器件，包括与TFT电连接并由相同材料形成的像素电极，并且在与栅电极，发光层和相对电极相同的层上; 以及由与栅极电极相同的材料形成的焊盘电极。 焊盘电极具有形成在其中的开口。

    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号：US20100044685A1

    公开(公告)日：2010-02-25

    申请号：US12413842

    申请日：2009-03-30

    申请人： Soo-Hyun KIM ,  Cheol-Ho PARK ,  Jong-Hyun PARK ,  Sun PARK ,  Chun-Gi YOU ,  Yul-Kyu LEE

    发明人： Soo-Hyun KIM ,  Cheol-Ho PARK ,  Jong-Hyun PARK ,  Sun PARK ,  Chun-Gi YOU ,  Yul-Kyu LEE

    IPC分类号： H01L51/52

    CPC分类号： H01L27/3272 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0042 ,  H01L51/0052

    摘要： An organic light emitting diode display including a substrate; a light blocking layer disposed on the substrate and having a semiconductor opening; a first semiconductor pattern disposed in the semiconductor opening; a gate insulating layer disposed on the light blocking layer and the first semiconductor pattern; a first gate electrode disposed on the gate insulating layer; a first source electrode electrically connected to the first semiconductor pattern; a first drain electrode spaced apart from the first source electrode; a protective insulating layer disposed on the first source electrode and the first drain electrode, the protective insulating layer having a contact portion; a pixel electrode disposed on the protective insulating layer contacting the first drain electrode through the contact portion; an emitting layer disposed on the pixel electrode; and a common electrode disposed on the emitting layer.

    摘要翻译： 一种有机发光二极管显示器，包括基板; 遮光层，设置在所述基板上并具有半导体开口; 设置在半导体开口中的第一半导体图案; 设置在所述遮光层和所述第一半导体图案上的栅极绝缘层; 设置在所述栅极绝缘层上的第一栅电极; 电连接到第一半导体图案的第一源电极; 与所述第一源电极间隔开的第一漏电极; 保护绝缘层，设置在所述第一源电极和所述第一漏电极上，所述保护绝缘层具有接触部分; 设置在所述保护绝缘层上的像素电极，所述保护绝缘层通过所述接触部分接触所述第一漏电极; 设置在像素电极上的发光层; 以及设置在发光层上的公共电极。

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160268287A1

    公开(公告)日：2016-09-15

    申请号：US15047882

    申请日：2016-02-19

    申请人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Dae-Seok BYEON

    发明人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Dae-Seok BYEON

    IPC分类号： H01L27/115 ,  H01L29/792

    CPC分类号： H01L27/11575 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

    摘要： A semiconductor device includes a substrate including cell and dummy regions, first channel structures on the cell region and extending in a first direction vertical with respect to the substrate, gate lines surrounding outer sidewalls of the first channel structures and extending in a second direction parallel to the substrate, the gate lines being spaced apart from each other along the first direction, cutting lines between the gate lines on the cell region and extending in the second direction, dummy patterns spaced apart from each other along the first direction on the dummy region, the dummy patterns having a stepped shape along a third direction parallel to the top surface of the substrate and perpendicular to the second direction, at least a portion of the dummy patterns including a same conductive material as that in the gate lines, and dummy lines through the dummy patterns.

    摘要翻译： 一种半导体器件包括：包括单元和虚设区域的基板，单元区域上的第一通道结构，并且相对于基板垂直于第一方向延伸;栅极线，其围绕第一通道结构的外侧壁延伸，并且沿第二方向平行延伸 所述基板，所述栅极线沿着所述第一方向彼此间隔开，在所述单元区域上的所述栅极线之间切割并沿所述第二方向延伸，在所述虚拟区域上沿着所述第一方向彼此间隔开的虚拟图案， 所述虚拟图案沿着与所述基板的顶面平行且垂直于所述第二方向的第三方向具有台阶状，所述虚设图案的至少一部分包括与所述栅极线相同的导电性材料， 虚拟模式。