公开(公告)号：US20120007083A1

公开(公告)日：2012-01-12

申请号：US13080444

申请日：2011-04-05

申请人： Chun-Gi YOU ,  Joon-Hoo Choi

发明人： Chun-Gi YOU ,  Joon-Hoo Choi

IPC分类号： H01L29/04 ,  H01L33/08

CPC分类号： H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/326 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L51/5265 ,  H01L51/5271 ,  H01L51/5296 ,  H01L2227/323

摘要： An organic light-emitting display device and a method of manufacturing the organic light-emitting display device. A metal layer separated from a pixel electrode is formed without increasing the number of masks, thereby simplifying the pixel electrode and obtaining etching characteristics of a gate electrode.

摘要翻译： 一种有机发光显示装置及其制造方法。 在不增加掩模数量的情况下形成与像素电极分离的金属层，从而简化像素电极并获得栅电极的蚀刻特性。

公开(公告)号：US20130200379A1

公开(公告)日：2013-08-08

申请号：US13589636

申请日：2012-08-20

申请人： Chun-Gi YOU ,  Joon-Hoo Choi

发明人： Chun-Gi YOU ,  Joon-Hoo Choi

IPC分类号： H01L51/50 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L27/1288 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/4908

摘要： A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer and a third insulating layer between the gate electrode and the source and drain electrodes, the first insulating layer and the second insulating layer extending in the TFT, a pixel electrode including a transparent conductive oxide material, the pixel electrode being on the first insulating layer and the second insulating layer and being connected to the source or drain electrodes via an opening in the third insulating layer, a capacitor including a first electrode on a same layer as the gate electrode and a second electrode on a same layer as the pixel electrode; and a fourth insulating layer covering the source and drain electrodes and exposing the pixel electrode via an opening.

摘要翻译： 薄膜晶体管（TFT）阵列基板包括：TFT，包括有源层，栅电极，源电极和漏电极，有源层和栅电极之间的第一绝缘层，以及第二绝缘层和第三绝缘层， 所述栅电极和所述源极漏极，所述第一绝缘层和在所述TFT中延伸的所述第二绝缘层，包括透明导电氧化物材料的像素电极，所述像素电极在所述第一绝缘层和所述第二绝缘层上，并且为 通过所述第三绝缘层中的开口连接到所述源电极或漏电极;电容器，包括与所述栅电极相同的层上的第一电极和与所述像素电极相同的层上的第二电极; 以及覆盖所述源电极和漏极的第四绝缘层，并且经由开口暴露所述像素电极。

公开(公告)号：US20130126882A1

公开(公告)日：2013-05-23

申请号：US13480746

申请日：2012-05-25

申请人： Chun-Gi YOU ,  Joon-Hoo Choi

发明人： Chun-Gi YOU ,  Joon-Hoo Choi

IPC分类号： H01L51/50 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/326 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5215 ,  H01L2227/323

摘要： A thin film transistor array substrate includes a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes, a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor and being connected to one of the source and drain electrodes via an opening in the second insulation layer, a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a transparent conductive oxide, and the second electrode being between the first and second insulation layers, and a third insulation layer covering the source and drain electrodes and exposing the pixel electrode.

摘要翻译： 薄膜晶体管阵列基板包括薄膜晶体管，其包括激活层，栅电极，源极和漏极，激活层和栅电极之间的第一绝缘层，以及栅电极和源极之间的第二绝缘层 和漏电极，包括透明导电氧化物的像素电极，所述像素电极在所述第一绝缘层的从所述薄膜晶体管延伸的部分上并且经由所述第二绝缘层中的开口连接到所述源极和漏极之一 包括第一电极和第二电极的电容器，所述第一电极位于与所述活化层相同的层上并且包括透明导电氧化物，所述第二电极位于所述第一绝缘层和所述第二绝缘层之间，并且所述第三绝缘层覆盖 源电极和漏极，并暴露像素电极。

公开(公告)号：US20130292651A1

公开(公告)日：2013-11-07

申请号：US13676707

申请日：2012-11-14

申请人： Chun-Gi YOU ,  Joon-Hoo CHOI ,  Jong-Hyun PARK ,  Kyung-Hoon PARK ,  Jeong-Hwan KIM ,  Seong-Kweon HEO

发明人： Chun-Gi YOU ,  Joon-Hoo CHOI ,  Jong-Hyun PARK ,  Kyung-Hoon PARK ,  Jeong-Hwan KIM ,  Seong-Kweon HEO

IPC分类号： H01L51/50

CPC分类号： H01L51/5092 ,  H01L27/3248 ,  H01L27/326 ,  H01L27/3265 ,  H01L51/5206 ,  H01L51/5212 ,  H01L2251/5392

摘要： The organic light emitting display apparatus includes a substrate; a buffer film on the substrate, the buffer film including a via hole, a thin film transistor (TFT) on the buffer film, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first electrode electrically connected to one of the source electrode and the drain electrode and corresponding to the via hole; an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

摘要翻译： 有机发光显示装置包括：基板; 衬底上的缓冲膜，缓冲膜包括通孔，缓冲膜上的薄膜晶体管（TFT），包括有源层的TFT，栅电极，源电极和漏电极，第一电极 电连接到源电极和漏电极中的一个并对应于通孔; 所述第一电极上的中间层，所述中间层包括有机发射层，以及在所述中间层上的第二电极。

公开(公告)号：US20130161632A1

公开(公告)日：2013-06-27

申请号：US13592508

申请日：2012-08-23

申请人： Chun-Gi YOU ,  Joon-Hoo Choi

发明人： Chun-Gi YOU ,  Joon-Hoo Choi

IPC分类号： H01L29/786 ,  H01L33/62

CPC分类号： H01L27/3276 ,  H01L27/1244 ,  H01L2227/323

摘要： An OLED apparatus including a thin film transistor including an activation layer, a gate electrode insulated from the activation layer and including a lower gate electrode and an upper gate electrode, an interlayer insulation film covering the gate electrode, and a source and drain electrode on the insulation film and contacting the activation layer; an OLED including a pixel electrode electrically connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode; a blister prevention layer on a same level as the activation layer; a gate insulation layer covering the activation layer and the blister prevention layer and insulating the activation layer from the gate electrode; and an interconnection unit including first and second layers on a portion of the gate insulation layer overlying the blister prevention layer, wherein the blister prevention layer protects the interconnection unit on the gate insulation layer from blistering.

摘要翻译： 一种OLED装置，包括：薄膜晶体管，其包括激活层，与所述激活层绝缘并且包括下栅电极和上栅电极的栅电极，覆盖所述栅电极的层间绝缘膜以及所述栅极电极和漏电极 绝缘膜并与活化层接触; 包括与薄膜晶体管电连接的像素电极的OLED，包括发光层的中间层和相对电极; 与激活层在同一水平上的防泡层; 覆盖所述活化层和所述起泡防止层并将所述活化层与所述栅电极绝缘的栅极绝缘层; 以及互连单元，其包括覆盖在防泡层上的栅极绝缘层的一部分上的第一层和第二层，其中防泡层保护栅极绝缘层上的互连单元不起泡。

公开(公告)号：US20110084276A1

公开(公告)日：2011-04-14

申请号：US12753732

申请日：2010-04-02

申请人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

发明人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78609 ,  H01L29/78618

摘要： A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

摘要翻译： 公开了一种薄膜晶体管（TFT）及其制造方法。 TFT包括衬底，设置在衬底上的栅电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上方并包括多晶硅（poly-Si）层的半导体层，设置的欧姆接触层 超过半导体层的预定区域，设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层，以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此，当控制底栅型TFT的截止电流时，可以通过简单的处理来防止由漏电流引起的特性的劣化。

公开(公告)号：US20080206911A1

公开(公告)日：2008-08-28

申请号：US11932732

申请日：2007-10-31

申请人： Sun PARK ,  Chun-Gi YOU

发明人： Sun PARK ,  Chun-Gi YOU

IPC分类号： H01L21/768

CPC分类号： H01L27/1288 ,  G02F1/133371 ,  G02F1/133555 ,  G02F2001/136236 ,  H01L27/1214

摘要： A method of manufacturing a liquid crystal display includes depositing a transparent conductive layer on a substrate, depositing a reflective conductive layer on the transparent conductive layer, forming a first photoresist film having a variable thickness on the reflective conductive layer, the variable thickness of the first photoresist film varying according to a position on the reflective conductive layer, first etching the reflective conductive layer and the transparent conductive layer using the first photoresist film as a first etch mask, forming a second photoresist film on the reflective conductive layer by baking the first photoresist film, and second etching the reflective conductive layer using the second photoresist film as a second etch mask.

摘要翻译： 一种制造液晶显示器的方法包括在基板上沉积透明导电层，在透明导电层上沉积反射导电层，在反射导电层上形成具有可变厚度的第一光致抗蚀剂膜，第一 光致抗蚀剂膜根据反射导电层上的位置而变化，首先使用第一光致抗蚀剂膜蚀刻反射导电层和透明导电层作为第一蚀刻掩模，通过烘焙第一光致抗蚀剂在反射导电层上形成第二光致抗蚀剂膜 并且使用第二光致抗蚀剂膜作为第二蚀刻掩模来第二蚀刻反射导电层。

公开(公告)号：US20080191981A1

公开(公告)日：2008-08-14

申请号：US11954576

申请日：2007-12-12

申请人： Chun-Gi YOU ,  Se-ll CHO

发明人： Chun-Gi YOU ,  Se-ll CHO

IPC分类号： G09G3/36

CPC分类号： G02F1/134363 ,  G02F1/13458 ,  G02F2001/134372 ,  G02F2001/136236

摘要： A display substrate includes a first metal pattern including a gate line and a signal line, a first insulation layer formed on a substrate where the first metal pattern is formed, a first electrode formed on the first insulation layer, and a second metal pattern including a connecting electrode and a data line. The first insulation layer includes a first opening portion exposing a portion of the signal line. The first electrode corresponds to a unit pixel. The connecting electrode is connected to the first electrode and the signal line through the first opening portion.

摘要翻译： 显示基板包括：第一金属图形，包括栅极线和信号线;第一绝缘层，形成在形成有第一金属图案的基板上;形成在第一绝缘层上的第一电极;以及第二金属图案， 连接电极和数据线。 第一绝缘层包括露出信号线的一部分的第一开口部分。 第一电极对应于单位像素。 连接电极通过第一开口部连接到第一电极和信号线。

公开(公告)号：US20140014908A1

公开(公告)日：2014-01-16

申请号：US13665112

申请日：2012-10-31

申请人： Sun PARK ,  Yul-Kyu LEE ,  Chun-Gi YOU ,  Ji-Hoon SONG

发明人： Sun PARK ,  Yul-Kyu LEE ,  Chun-Gi YOU ,  Ji-Hoon SONG

IPC分类号： H05K7/06 ,  H01L51/52 ,  H05K13/00

CPC分类号： H01L27/3276 ,  G02F1/13452 ,  G02F2201/48 ,  H01L51/5237 ,  H01L51/524 ,  Y10T29/49124

摘要： A display apparatus includes a substrate including a display area, an encapsulation member facing the substrate, a pad unit around the display area of the substrate, the pad unit including a contact area and an exposure area that is spaced apart from the contact area, and a flexible printed circuit (FPC) that is connected to the contact area of the pad unit and is curved towards the encapsulation member.

摘要翻译： 显示装置包括：基板，包括显示区域，面向基板的封装构件，围绕基板的显示区域的焊盘单元，所述焊盘单元包括接触区域和与所述接触区域间隔开的曝光区域;以及 柔性印刷电路（FPC），其连接到所述焊盘单元的接触区域并且朝向所述封装构件弯曲。

公开(公告)号：US20130270538A1

公开(公告)日：2013-10-17

申请号：US13898186

申请日：2013-05-20

申请人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

发明人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

IPC分类号： H01L51/52 ,  H01L29/786

CPC分类号： H01L51/5281 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/66765 ,  H01L29/78678

摘要： A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

摘要翻译： 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。